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Results: 26-33/33
Authors:
Chow, WW
Jones, ED
Modine, NA
Allerman, AA
Kurtz, SR
Citation: Ww. Chow et al., Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells, APPL PHYS L, 75(19), 1999, pp. 2891-2893
Authors:
Li, JZ
Lin, JY
Jiang, HX
Geisz, JF
Kurtz, SR
Citation: Jz. Li et al., Persistent photoconductivity in Ga1-xInxNyAs1-y, APPL PHYS L, 75(13), 1999, pp. 1899-1901
Authors:
Kurtz, SR
Allerman, AA
Jones, ED
Gee, JM
Banas, JJ
Hammons, BE
Citation: Sr. Kurtz et al., InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs, APPL PHYS L, 74(5), 1999, pp. 729-731
Authors:
Kwon, D
Kaplar, RJ
Ringel, SA
Allerman, AA
Kurtz, SR
Jones, ED
Citation: D. Kwon et al., Deep levels in p-type InGaAsN lattice matched to GaAs, APPL PHYS L, 74(19), 1999, pp. 2830-2832
Authors:
Biefeld, RM
Allerman, AA
Kurtz, SR
Baucom, KC
Citation: Rm. Biefeld et al., Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition, J CRYST GR, 195(1-4), 1998, pp. 356-362
Authors:
Geisz, JF
Friedman, DJ
Olson, JM
Kurtz, SR
Keyes, BM
Citation: Jf. Geisz et al., Photocurrent of 1 eV GaInNAs lattice-matched to GaAs, J CRYST GR, 195(1-4), 1998, pp. 401-408
Authors:
Friedman, DJ
Geisz, JF
Kurtz, SR
Olson, JM
Citation: Dj. Friedman et al., 1-eV solar cells with GaInNAs active layer, J CRYST GR, 195(1-4), 1998, pp. 409-415
Authors:
Friedman, DJ
Geisz, JF
Kurtz, SR
Olson, JM
Reedy, R
Citation: Dj. Friedman et al., Nonlinear dependence of N incorporation on In content in GaInNAs, J CRYST GR, 195(1-4), 1998, pp. 438-443