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Results: 1-11 |
Results: 11
Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition
Authors: Kim, DW Kim, YH Chen, XD Lee, CH Song, SC Prins, FE Kwong, DL Banerjee, S
Citation: Dw. Kim et al., Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition, J VAC SCI B, 19(4), 2001, pp. 1104-1108
Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric
Authors: Lu, Q Yeo, YC Yang, KJ Lin, R Polishchuk, I King, TJ Hu, CM Song, SC Luan, HF Kwong, DL Guo, X Luo, ZJ Wang, XW Ma, TP
Citation: Q. Lu et al., Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric, IEEE ELEC D, 22(7), 2001, pp. 324-326
Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric
Authors: Yeo, YC Lu, Q Ranade, P Takeuchi, H Yang, KJ Polishchuk, I King, TJ Hu, C Song, SC Luan, HF Kwong, DL
Citation: Yc. Yeo et al., Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric, IEEE ELEC D, 22(5), 2001, pp. 227-229
Pulmonary sequelae of treatment for breast cancer: A prospective study
Authors: Ooi, GC Kwong, DL Ho, JC Lock, DT Chan, FL Lam, WK Ngan, H Au, G Tsang, KW
Citation: Gc. Ooi et al., Pulmonary sequelae of treatment for breast cancer: A prospective study, INT J RAD O, 50(2), 2001, pp. 411-419
Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics
Authors: Zhong, HC Heuss, G Misra, V Luan, HF Lee, CH Kwong, DL
Citation: Hc. Zhong et al., Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics, APPL PHYS L, 78(8), 2001, pp. 1134-1136
Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)
Authors: Jeon, TS White, JM Kwong, DL
Citation: Ts. Jeon et al., Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100), APPL PHYS L, 78(3), 2001, pp. 368-370
Interfacial silicon oxide formation during oxygen annealing of Ta2O5 thin films on Si: Oxygen isotope labeling
Authors: Park, HJ Mao, A Kwong, DL White, JM
Citation: Hj. Park et al., Interfacial silicon oxide formation during oxygen annealing of Ta2O5 thin films on Si: Oxygen isotope labeling, J VAC SCI A, 18(5), 2000, pp. 2522-2526
Effects of vacuum and inert gas annealing of ultrathin tantalum pentoxide films on Si(100)
Authors: Mao, AY Son, KA White, JM Kwong, DL Roberts, DA Vrtis, RN
Citation: Ay. Mao et al., Effects of vacuum and inert gas annealing of ultrathin tantalum pentoxide films on Si(100), J VAC SCI A, 17(3), 1999, pp. 954-960
Ultra thin high-quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si
Authors: Song, SC Luan, HF Lee, CH Mao, AY Lee, SJ Gelpey, J Marcus, S Kwong, DL
Citation: Sc. Song et al., Ultra thin high-quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si, MICROEL ENG, 48(1-4), 1999, pp. 55-58
Annealing ultra thin Ta2O5 films deposited on bare and nitrogen passivatedSi(100)
Authors: Mao, AY Son, KA Hess, DA Brown, LA White, JM Kwong, DL Roberts, DA Vrtis, RN
Citation: Ay. Mao et al., Annealing ultra thin Ta2O5 films deposited on bare and nitrogen passivatedSi(100), THIN SOL FI, 349(1-2), 1999, pp. 230-237
Deposition and annealing of ultrathin Ta2O5 films on nitrogen passivated Si(100)
Authors: Son, KA Mao, AY Hess, DA Brown, LA White, JM Kwong, DL Roberts, DA Vrtis, RN
Citation: Ka. Son et al., Deposition and annealing of ultrathin Ta2O5 films on nitrogen passivated Si(100), EL SOLID ST, 1(4), 1998, pp. 178-180
Risultati: 1-11 |