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Results:
1-10
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Results: 10
Authors:
BONAFOS C
CLAVERIE A
ALQUIER D
BERGAUD C
MARTINEZ A
LAANAB L
MATHIOT D
Citation: C. Bonafos et al., THE EFFECT OF THE BORON DOPING LEVEL ON THE THERMAL-BEHAVIOR OF END-OF-RANGE DEFECTS IN SILICON, Applied physics letters, 71(3), 1997, pp. 365-367
Authors:
HENDA R
LAANAB L
SCHEID E
FOURMEAUX R
Citation: R. Henda et al., CHARACTERIZATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-NITRIDE FILMS FROM DISILANE AND AMMONIA, JPN J A P 2, 34(4A), 1995, pp. 437-439
Authors:
CLAVERIE A
LAANAB L
BONAFOS C
BERGAUD C
MARTINEZ A
MATHIOT D
Citation: A. Claverie et al., ON THE RELATION BETWEEN DOPANT ANOMALOUS DIFFUSION IN SI AND END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 202-209
Authors:
LAANAB L
BERGAUD C
BONAFOS C
MARTINEZ A
CLAVERIE A
Citation: L. Laanab et al., VARIATION OF END-OF-RANGE DENSITY WITH ION-BEAM ENERGY AND THE PREDICTIONS OF THE EXCESS INTERSTITIALS MODEL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 236-240
Authors:
CLAVERIE A
FUJIOKA H
LAANAB L
LILIENTALWEBER Z
WEBER ER
Citation: A. Claverie et al., SYNTHESIS OF SEMIINSULATING GAAS BY AS IMPLANTATION AND THERMAL ANNEALING - STRUCTURAL AND ELECTRICAL-PROPERTIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 327-330
Authors:
FAURE J
CLAVERIE A
LAANAB L
BONHOMME P
Citation: J. Faure et al., RECRYSTALLIZATION OF BORON-DOPED AND UNDOPED PREAMORPHIZED SILICON LAYERS BY RAPID AND CONVENTIONAL THERMAL ANNEALING, Materials science & engineering. B, Solid-state materials for advanced technology, 22(2-3), 1994, pp. 128-132
Authors:
BENAMARA M
ROCHER A
LAANAB L
CLAVERIE A
LAPORTE A
SARRABAYROUSSE G
LESCOUZERES L
PEYRELAVIGNE A
Citation: M. Benamara et al., INTERFACIAL STRUCTURE OF BONDED SILICON O N SILICON-WAFERS, Comptes rendus de l'Academie des sciences. Serie 2, Mecanique, physique, chimie, sciences de l'univers, sciences de la terre, 318(11), 1994, pp. 1459-1464
Authors:
DEMAUDUIT B
LAANAB L
BERGAUD C
FAYE MM
MARTINEZ A
CLAVERIE A
Citation: B. Demauduit et al., IDENTIFICATION OF EOR DEFECTS DUE TO THE REGROWTH OF AMORPHOUS LAYERSCREATED BY ION-BOMBARDMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 190-194
Authors:
LAANAB L
MARTINEZ A
ESSAID A
BONAFOS C
CLAVERIE A
Citation: L. Laanab et al., MINIMIZATION OF THE DENSITY OF EOR DEFECTS AFTER PREAMORPHISATION ANDTHERMAL ANNEALING, Annales de chimie, 19(7-8), 1994, pp. 459-464
Authors:
FAYE MM
VIEU C
LAANAB L
BEAUVILLAIN J
CLAVERIE A
Citation: Mm. Faye et al., SIMULATION OF LATERAL AL RECOIL ATOMS AND DAMAGE DEFECTS GRADIENTS INA GAAS GAALAS QUANTUM-WELL CREATED BY MASKED ION-IMPLANTATION/, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 284-287
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