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Results:
1-19
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Results: 19
Authors:
SAMORI C
LACAITA AL
VILLA F
ZAPPA F
Citation: C. Samori et al., SPECTRUM FOLDING AND PHASE NOISE IN LC TUNED OSCILLATORS, IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 45(7), 1998, pp. 781-790
Authors:
LACAITA AL
SAMORI C
Citation: Al. Lacaita et C. Samori, PHASE-NOISE PERFORMANCE OF CRYSTAL-LIKE LC TANKS, IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 45(7), 1998, pp. 898-900
Authors:
PACELLI A
LACAITA AL
VILLA S
PERRON L
Citation: A. Pacelli et al., RELIABLE EXTRACTION OF MOS INTERFACE TRAPS FROM LOW-FREQUENCY CV MEASUREMENTS, IEEE electron device letters, 19(5), 1998, pp. 148-150
Authors:
PERRON LM
HAMAGUCHI C
LACAITA AL
MAEGAWA S
YAMAGUCHI Y
Citation: Lm. Perron et al., TRANSIENT-BEHAVIOR AND LOW V-DS HYSTERESIS IN PD SOI MOSFETS, Microelectronics and reliability, 38(5), 1998, pp. 759-765
Authors:
PACELLI A
LACAITA AL
SPINELLI A
BEZ R
Citation: A. Pacelli et al., EFFECT OF N2O NITRIDATION ON THE ELECTRICAL-PROPERTIES OF MOS GATE OXIDES, Microelectronics and reliability, 38(2), 1998, pp. 239-242
Authors:
PERRON LM
HAMAGUCHI C
LACAITA AL
MAEGAWA S
YAMAGUCHI Y
Citation: Lm. Perron et al., EXPERIMENTAL CHARACTERIZATION OF THE CONTINUOUS SWITCHING REGIME IN FLOATING-BODY PD SOI MOSFET, Microelectronics and reliability, 38(10), 1998, pp. 1553-1559
Authors:
PACELLI A
SPINELLI AS
LACAITA AL
Citation: A. Pacelli et al., IMPACT IONIZATION IN SILICON - A MICROSCOPIC VIEW, Journal of applied physics, 83(9), 1998, pp. 4760-4764
Authors:
PERRON LM
HAMAGUCHI C
LACAITA AL
MAEGAWA S
YAMAGUCHI Y
Citation: Lm. Perron et al., SWITCH-OFF BEHAVIOR OF FLOATING-BODY PD SOI MOSFETS, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2372-2375
Authors:
ZAPPA F
LACAITA AL
SAMORI C
Citation: F. Zappa et al., IMPACT OF LOCAL-NEGATIVE-FEEDBACK ON THE MRS AVALANCHE PHOTODETECTOR OPERATION, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 91-97
Authors:
VILLA S
LACAITA AL
PERRON LM
BEZ R
Citation: S. Villa et al., PHYSICALLY-BASED MODEL OF THE EFFECTIVE MOBILITY IN HEAVILY-DOPED N-MOSFETS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 110-115
Authors:
SAMORI C
LACAITA AL
ZANCHI A
PIZZOLATO F
Citation: C. Samori et al., EXPERIMENTAL-VERIFICATION OF THE LINK BETWEEN TIMING JITTER AND PHASENOISE, Electronics Letters, 34(21), 1998, pp. 2024-2025
Authors:
PERRON L
LACAITA AL
PACELLI A
BEZ R
Citation: L. Perron et al., ELECTRON-MOBILITY IN ULSI MOSFETS - EFFECT OF INTERFACE TRAPS AND OXIDE NITRIDATION, IEEE electron device letters, 18(5), 1997, pp. 235-237
Authors:
SPINELLI A
LACAITA AL
Citation: A. Spinelli et Al. Lacaita, PHYSICS AND NUMERICAL-SIMULATION OF SINGLE-PHOTON AVALANCHE-DIODES, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1931-1943
Authors:
PACELLI A
LACAITA AL
Citation: A. Pacelli et Al. Lacaita, ON THE SHAPE OF HOT-CARRIER TAILS IN NONLOCAL TRANSPORT, Semiconductor science and technology, 11(11), 1996, pp. 1642-1645
Authors:
ZAPPA F
LACAITA AL
COVA SD
LOVATI P
Citation: F. Zappa et al., SOLID-STATE SINGLE-PHOTON DETECTORS, Optical engineering, 35(4), 1996, pp. 938-945
Authors:
SPINELLI A
LACAITA AL
Citation: A. Spinelli et Al. Lacaita, MEAN GAIN OF AVALANCHE PHOTODIODES IN A DEAD SPACE MODEL, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 23-30
Authors:
SPINELLI A
PACELLI A
LACAITA AL
Citation: A. Spinelli et al., DEAD SPACE APPROXIMATION FOR IMPACT IONIZATION IN SILICON, Applied physics letters, 69(24), 1996, pp. 3707-3709
Authors:
VILLA S
LACAITA AL
PACELLI A
Citation: S. Villa et al., PHOTON-EMISSION FROM HOT-ELECTRONS IN SILICON, Physical review. B, Condensed matter, 52(15), 1995, pp. 10993-10999
SINGLE-PHOTON OPTICAL-TIME-DOMAIN REFLECTOMETER AT 1.3 MU-M WITH 5-CMRESOLUTION AND HIGH-SENSITIVITY
Authors:
LACAITA AL
FRANCESE PA
COVA SD
RIPARMONTI G
Citation: Al. Lacaita et al., SINGLE-PHOTON OPTICAL-TIME-DOMAIN REFLECTOMETER AT 1.3 MU-M WITH 5-CMRESOLUTION AND HIGH-SENSITIVITY, Optics letters, 18(13), 1993, pp. 1110-1112
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