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Results: 1-16 |
Results: 16
CONDITIONS FOR THE FORMATION OF RING-LIKE DISTRIBUTED STACKING-FAULTSIN CZ-SI WAFERS
Authors: KISSINGER G VANHELLEMONT J LAMBERT U GRAF D GRABOLLA T RICHTER H
Citation: G. Kissinger et al., CONDITIONS FOR THE FORMATION OF RING-LIKE DISTRIBUTED STACKING-FAULTSIN CZ-SI WAFERS, JPN J A P 2, 37(3B), 1998, pp. 306-308
EFFECT OF THERMAL DIFFUSE-SCATTERING IN TRIPLE-CRYSTAL DIFFRACTOMETRYWITH HIGH-ENERGY SYNCHROTRON-RADIATION
Authors: SCHMIDT T WOO D KEITEL S SCHNEIDER JR LAMBERT U ZULEHNER W
Citation: T. Schmidt et al., EFFECT OF THERMAL DIFFUSE-SCATTERING IN TRIPLE-CRYSTAL DIFFRACTOMETRYWITH HIGH-ENERGY SYNCHROTRON-RADIATION, Journal of applied crystallography, 31, 1998, pp. 625-633
INFLUENCE OF RESIDUAL POINT-DEFECT SUPERSATURATION ON THE FORMATION OF GROWN-IN OXIDE PRECIPITATE NUCLEI IN CZ-SI
Authors: KISSINGER G VANHELLEMONT J LAMBERT U GRAF D DORNBERGER E RICHTER H
Citation: G. Kissinger et al., INFLUENCE OF RESIDUAL POINT-DEFECT SUPERSATURATION ON THE FORMATION OF GROWN-IN OXIDE PRECIPITATE NUCLEI IN CZ-SI, Journal of the Electrochemical Society, 145(5), 1998, pp. 75-78
CHARACTERIZATION OF CRYSTAL QUALITY BY CRYSTAL ORIGINATED PARTICLE DELINEATION AND THE IMPACT ON THE SILICON-WAFER SURFACE
Authors: GRAF D SUHREN M LAMBERT U SCHMOLKE R EHLERT A VONAMMON W WAGNER P
Citation: D. Graf et al., CHARACTERIZATION OF CRYSTAL QUALITY BY CRYSTAL ORIGINATED PARTICLE DELINEATION AND THE IMPACT ON THE SILICON-WAFER SURFACE, Journal of the Electrochemical Society, 145(1), 1998, pp. 275-284
INTERNAL OXIDATION OF VACANCY AGGLOMERATES IN CZOCHRALSKI SILICON-WAFERS DURING HIGH-TEMPERATURE ANNEALS
Authors: KISSINGER G MORGENSTERN G VANHELLEMONT J GRAF D LAMBERT U RICHTER H
Citation: G. Kissinger et al., INTERNAL OXIDATION OF VACANCY AGGLOMERATES IN CZOCHRALSKI SILICON-WAFERS DURING HIGH-TEMPERATURE ANNEALS, Applied physics letters, 72(2), 1998, pp. 223-225
KEY INFLUENCE OF THE THERMAL HISTORY ON PROCESS-INDUCED DEFECTS IN CZOCHRALSKI SILICON-WAFERS
Authors: KISSINGER G GRAF D LAMBERT U GRABOLLA T RICHTER H
Citation: G. Kissinger et al., KEY INFLUENCE OF THE THERMAL HISTORY ON PROCESS-INDUCED DEFECTS IN CZOCHRALSKI SILICON-WAFERS, Semiconductor science and technology, 12(7), 1997, pp. 933-937
INFLUENCE OF BORON CONCENTRATION ON THE OXIDATION-INDUCED STACKING-FAULT RING IN CZOCHRALSKI SILICON-CRYSTALS
Authors: DORNBERGER E GRAF D SUHREN M LAMBERT U WAGNER P DUPRET F VONAMMON W
Citation: E. Dornberger et al., INFLUENCE OF BORON CONCENTRATION ON THE OXIDATION-INDUCED STACKING-FAULT RING IN CZOCHRALSKI SILICON-CRYSTALS, Journal of crystal growth, 180(3-4), 1997, pp. 343-352
MEASUREMENT, MODELING AND SIMULATION OF DEFECTS IN AS-GROWN CZOCHRALSKI SILICON
Authors: VANHELLEMONT J SENKADER S KISSINGER G HIGGS V TRAUWAERT MA GRAF D LAMBERT U WAGNER P
Citation: J. Vanhellemont et al., MEASUREMENT, MODELING AND SIMULATION OF DEFECTS IN AS-GROWN CZOCHRALSKI SILICON, Journal of crystal growth, 180(3-4), 1997, pp. 353-362
METHOD FOR STUDYING THE GROWN-IN DEFECT DENSITY SPECTRA IN CZOCHRALSKI SILICON-WAFERS
Authors: KISSINGER G GRAF D LAMBERT U RICHTER H
Citation: G. Kissinger et al., METHOD FOR STUDYING THE GROWN-IN DEFECT DENSITY SPECTRA IN CZOCHRALSKI SILICON-WAFERS, Journal of the Electrochemical Society, 144(4), 1997, pp. 1447-1456
CRYSTAL DEFECTS IN HIGHLY BORON-DOPED SILICON
Authors: SUHREN M GRAF D LAMBERT U WAGNER P
Citation: M. Suhren et al., CRYSTAL DEFECTS IN HIGHLY BORON-DOPED SILICON, Journal of the Electrochemical Society, 144(11), 1997, pp. 4041-4044
INFLUENCE OF OXYGEN AND NITROGEN ON POINT-DEFECT AGGREGATION IN SILICON SINGLE-CRYSTALS
Authors: VONAMMON W DREIER P HENSEL W LAMBERT U KOSTER L
Citation: W. Vonammon et al., INFLUENCE OF OXYGEN AND NITROGEN ON POINT-DEFECT AGGREGATION IN SILICON SINGLE-CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 33-41
COMPARISON OF HIGH-TEMPERATURE ANNEALED CZOCHRALSKI SILICON-WAFERS AND EPITAXIAL WAFERS
Authors: GRAF D LAMBERT U BROHL M EHLERT A WAHLICH R WAGNER P
Citation: D. Graf et al., COMPARISON OF HIGH-TEMPERATURE ANNEALED CZOCHRALSKI SILICON-WAFERS AND EPITAXIAL WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 50-54
INFLUENCE OF PYROLYTIC BORON-NITRIDE CRUCIBLES ON GAAS CRYSTAL-GROWTHPROCESS AND CRYSTAL PROPERTIES
Authors: FISCHER L LAMBERT U NAGEL G RUFER H TOMZIG E
Citation: L. Fischer et al., INFLUENCE OF PYROLYTIC BORON-NITRIDE CRUCIBLES ON GAAS CRYSTAL-GROWTHPROCESS AND CRYSTAL PROPERTIES, Journal of crystal growth, 153(3-4), 1995, pp. 90-96
IMPROVEMENT OF CZOCHRALSKI SILICON-WAFERS BY HIGH-TEMPERATURE ANNEALING
Authors: GRAF D LAMBERT U BROHL M EHLERT A WAHLICH R WAGNER P
Citation: D. Graf et al., IMPROVEMENT OF CZOCHRALSKI SILICON-WAFERS BY HIGH-TEMPERATURE ANNEALING, Journal of the Electrochemical Society, 142(9), 1995, pp. 3189-3192
RADIOFREQUENCY SPARK SOURCE-MASS SPECTROMETRIC ANALYSIS OF OXYGEN IN UNDOPED SILICON-CRYSTALS AND OF CARBON IN UNDOPED AND CARBON-DOPED GALLIUM-ARSENIDE CRYSTALS
Authors: WIEDEMANN B BETHGE K SCHUTZE W LAMBERT U PAHLKE S REINHOLD T WEINERT B FLADE T
Citation: B. Wiedemann et al., RADIOFREQUENCY SPARK SOURCE-MASS SPECTROMETRIC ANALYSIS OF OXYGEN IN UNDOPED SILICON-CRYSTALS AND OF CARBON IN UNDOPED AND CARBON-DOPED GALLIUM-ARSENIDE CRYSTALS, Fresenius' journal of analytical chemistry, 350(4-5), 1994, pp. 319-322
ADVANCED ARSENIC PURIFICATION AND GAAS SYNTHESIS FOR IMPROVED REPRODUCIBLE GROWTH OF UNDOPED SEMIINSULATING GAAS
Authors: IMMENROTH H LAMBERT U TOMZIG E
Citation: H. Immenroth et al., ADVANCED ARSENIC PURIFICATION AND GAAS SYNTHESIS FOR IMPROVED REPRODUCIBLE GROWTH OF UNDOPED SEMIINSULATING GAAS, Journal of crystal growth, 142(1-2), 1994, pp. 37-48
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