Authors:
KISSINGER G
VANHELLEMONT J
LAMBERT U
GRAF D
GRABOLLA T
RICHTER H
Citation: G. Kissinger et al., CONDITIONS FOR THE FORMATION OF RING-LIKE DISTRIBUTED STACKING-FAULTSIN CZ-SI WAFERS, JPN J A P 2, 37(3B), 1998, pp. 306-308
Authors:
SCHMIDT T
WOO D
KEITEL S
SCHNEIDER JR
LAMBERT U
ZULEHNER W
Citation: T. Schmidt et al., EFFECT OF THERMAL DIFFUSE-SCATTERING IN TRIPLE-CRYSTAL DIFFRACTOMETRYWITH HIGH-ENERGY SYNCHROTRON-RADIATION, Journal of applied crystallography, 31, 1998, pp. 625-633
Authors:
KISSINGER G
VANHELLEMONT J
LAMBERT U
GRAF D
DORNBERGER E
RICHTER H
Citation: G. Kissinger et al., INFLUENCE OF RESIDUAL POINT-DEFECT SUPERSATURATION ON THE FORMATION OF GROWN-IN OXIDE PRECIPITATE NUCLEI IN CZ-SI, Journal of the Electrochemical Society, 145(5), 1998, pp. 75-78
Authors:
GRAF D
SUHREN M
LAMBERT U
SCHMOLKE R
EHLERT A
VONAMMON W
WAGNER P
Citation: D. Graf et al., CHARACTERIZATION OF CRYSTAL QUALITY BY CRYSTAL ORIGINATED PARTICLE DELINEATION AND THE IMPACT ON THE SILICON-WAFER SURFACE, Journal of the Electrochemical Society, 145(1), 1998, pp. 275-284
Authors:
KISSINGER G
MORGENSTERN G
VANHELLEMONT J
GRAF D
LAMBERT U
RICHTER H
Citation: G. Kissinger et al., INTERNAL OXIDATION OF VACANCY AGGLOMERATES IN CZOCHRALSKI SILICON-WAFERS DURING HIGH-TEMPERATURE ANNEALS, Applied physics letters, 72(2), 1998, pp. 223-225
Authors:
KISSINGER G
GRAF D
LAMBERT U
GRABOLLA T
RICHTER H
Citation: G. Kissinger et al., KEY INFLUENCE OF THE THERMAL HISTORY ON PROCESS-INDUCED DEFECTS IN CZOCHRALSKI SILICON-WAFERS, Semiconductor science and technology, 12(7), 1997, pp. 933-937
Authors:
DORNBERGER E
GRAF D
SUHREN M
LAMBERT U
WAGNER P
DUPRET F
VONAMMON W
Citation: E. Dornberger et al., INFLUENCE OF BORON CONCENTRATION ON THE OXIDATION-INDUCED STACKING-FAULT RING IN CZOCHRALSKI SILICON-CRYSTALS, Journal of crystal growth, 180(3-4), 1997, pp. 343-352
Authors:
VANHELLEMONT J
SENKADER S
KISSINGER G
HIGGS V
TRAUWAERT MA
GRAF D
LAMBERT U
WAGNER P
Citation: J. Vanhellemont et al., MEASUREMENT, MODELING AND SIMULATION OF DEFECTS IN AS-GROWN CZOCHRALSKI SILICON, Journal of crystal growth, 180(3-4), 1997, pp. 353-362
Citation: G. Kissinger et al., METHOD FOR STUDYING THE GROWN-IN DEFECT DENSITY SPECTRA IN CZOCHRALSKI SILICON-WAFERS, Journal of the Electrochemical Society, 144(4), 1997, pp. 1447-1456
Authors:
VONAMMON W
DREIER P
HENSEL W
LAMBERT U
KOSTER L
Citation: W. Vonammon et al., INFLUENCE OF OXYGEN AND NITROGEN ON POINT-DEFECT AGGREGATION IN SILICON SINGLE-CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 33-41
Authors:
GRAF D
LAMBERT U
BROHL M
EHLERT A
WAHLICH R
WAGNER P
Citation: D. Graf et al., COMPARISON OF HIGH-TEMPERATURE ANNEALED CZOCHRALSKI SILICON-WAFERS AND EPITAXIAL WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 50-54
Authors:
FISCHER L
LAMBERT U
NAGEL G
RUFER H
TOMZIG E
Citation: L. Fischer et al., INFLUENCE OF PYROLYTIC BORON-NITRIDE CRUCIBLES ON GAAS CRYSTAL-GROWTHPROCESS AND CRYSTAL PROPERTIES, Journal of crystal growth, 153(3-4), 1995, pp. 90-96
Authors:
GRAF D
LAMBERT U
BROHL M
EHLERT A
WAHLICH R
WAGNER P
Citation: D. Graf et al., IMPROVEMENT OF CZOCHRALSKI SILICON-WAFERS BY HIGH-TEMPERATURE ANNEALING, Journal of the Electrochemical Society, 142(9), 1995, pp. 3189-3192
Authors:
WIEDEMANN B
BETHGE K
SCHUTZE W
LAMBERT U
PAHLKE S
REINHOLD T
WEINERT B
FLADE T
Citation: B. Wiedemann et al., RADIOFREQUENCY SPARK SOURCE-MASS SPECTROMETRIC ANALYSIS OF OXYGEN IN UNDOPED SILICON-CRYSTALS AND OF CARBON IN UNDOPED AND CARBON-DOPED GALLIUM-ARSENIDE CRYSTALS, Fresenius' journal of analytical chemistry, 350(4-5), 1994, pp. 319-322
Citation: H. Immenroth et al., ADVANCED ARSENIC PURIFICATION AND GAAS SYNTHESIS FOR IMPROVED REPRODUCIBLE GROWTH OF UNDOPED SEMIINSULATING GAAS, Journal of crystal growth, 142(1-2), 1994, pp. 37-48