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Results: 26-46/46
Authors:
LANDHEER D
TAO Y
XU DX
SPROULE GI
BUCHANAN DA
Citation: D. Landheer et al., DEFECTS GENERATED BY FOWLER-NORDHEIM INJECTION IN SILICON DIOXIDE FILMS PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION WITH NITROUS-OXIDE AND SILANE, Journal of applied physics, 78(3), 1995, pp. 1818-1823
Authors:
LANDHEER D
XU DX
TAO Y
SPROULE GI
Citation: D. Landheer et al., EFFECT OF POWER ON INTERFACE AND ELECTRICAL-PROPERTIES OF SIO2-FILMS PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 77(4), 1995, pp. 1600-1606
Authors:
BARDWELL JA
SCHMUKI P
SPROULE GI
LANDHEER D
MITCHELL DF
Citation: Ja. Bardwell et al., PHYSICAL AND ELECTRICAL CHARACTERIZATION OF THIN ANODIC OXIDES ON SI(100), Journal of the Electrochemical Society, 142(11), 1995, pp. 3933-3940
Authors:
KWOK RWM
HUANG LJ
LAU WM
KASRAI M
FENG X
TAN K
INGREY S
LANDHEER D
Citation: Rwm. Kwok et al., X-RAY-ABSORPTION NEAR-EDGE STRUCTURES OF SULFUR ON GAS-PHASE POLYSULFIDE TREATED INP SURFACES AND AT SINX INP INTERFACES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(5), 1994, pp. 2701-2704
Authors:
LANDHEER D
LU ZH
BARIBEAU JM
HUANG LJ
LAU WM
Citation: D. Landheer et al., CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL-INSULATOR-SEMICONDUCTOR DIODES WITH S-PASSIVATION AND SI INTERFACE CONTROL LAYERS ON GAAS AND INP, Journal of electronic materials, 23(9), 1994, pp. 943-952
Authors:
HUANG LJ
LAU WM
INGREY S
LANDHEER D
NOEL JP
Citation: Lj. Huang et al., METAL-INSULATOR-SEMICONDUCTOR CAPACITORS ON CLEAVED GAAS(110), Journal of applied physics, 76(12), 1994, pp. 8192-8194
Authors:
LANDHEER D
YOUSEFI GH
WEBB JB
KWOK RWM
LAU WM
Citation: D. Landheer et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY OF HF-CLEANED AND SULFUR-PASSIVATEDINP METAL NITRIDE SEMICONDUCTOR STRUCTURES, Journal of applied physics, 75(7), 1994, pp. 3516-3521
Authors:
LANDHEER D
BARDWELL JA
CLARK KB
Citation: D. Landheer et al., ELECTRICAL-PROPERTIES OF THIN ANODIC OXIDES FORMED ON SILICON IN AQUEOUS NH4OH SOLUTIONS, Journal of the Electrochemical Society, 141(5), 1994, pp. 1309-1312
Authors:
KUTA JJ
VANDRIEL HM
LANDHEER D
FENG Y
Citation: Jj. Kuta et al., POLARIZATION DEPENDENCE OF THE TEMPORAL RESPONSE OF METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, Applied physics letters, 65(24), 1994, pp. 3146-3148
Authors:
KUTA JJ
VANDRIEL HM
LANDHEER D
ADAMS JA
Citation: Jj. Kuta et al., POLARIZATION AND WAVELENGTH DEPENDENCE OF METAL-SEMICONDUCTOR-METAL PHOTODETECTOR RESPONSE, Applied physics letters, 64(2), 1994, pp. 140-142
Authors:
LU ZH
LANDHEER D
BARIBEAU JM
HUANG LJ
LAU WW
Citation: Zh. Lu et al., SI GE/S MULTILAYER PASSIVATION OF GAAS(100) FOR METAL-INSULATOR-SEMICONDUCTOR CAPACITORS/, Applied physics letters, 64(13), 1994, pp. 1702-1704
Authors:
LANDHEER D
MEESTERS CJM
Citation: D. Landheer et Cjm. Meesters, FRICTION AND WEAR OF PTFE COMPOUNDS, Kunststoffe, German plastics, 83(12), 1993, pp. 996-1001
Authors:
KWOK RWM
LAU WM
LANDHEER D
INGREY S
Citation: Rwm. Kwok et al., SURFACE-CHARGE SPECTROSCOPY - A NOVEL SURFACE SCIENCE TECHNIQUE FOR MEASURING SURFACE-STATE DISTRIBUTIONS ON SEMICONDUCTORS, Journal of electronic materials, 22(9), 1993, pp. 1141-1146
Authors:
MCGREER KA
CHARBONNEAU S
DAVIES M
AERS G
TAKASAKI B
LANDHEER D
MOSS D
DION M
DELAGE A
Citation: Ka. Mcgreer et al., HIGH-EFFICIENCY HIGH-SPEED PHOTODETECTION IN A MONOLITHICALLY INTEGRATABLE INGAAS INP MQW LASER STRUCTURE AT 1.5 MU-M/, Electronics Letters, 29(3), 1993, pp. 271-272
Authors:
FENG Y
SACHRAJDA AS
TAYLOR RP
ADAMS JA
DAVIES M
ZAWADZKI P
COLERIDGE PT
LANDHEER D
MARSHALL PA
BARBER R
Citation: Y. Feng et al., DEMONSTRATION OF QUANTUM DOTS AND QUANTUM WIRES WITH REMOVABLE IMPURITIES, Applied physics letters, 63(12), 1993, pp. 1666-1668
Authors:
CHARBONNEAU S
AERS GC
MCGREER KA
DAVIES M
LANDHEER D
LI ZM
DELAGE A
DION M
TAKASAKI B
CONN D
MOSS D
Citation: S. Charbonneau et al., HIGH-SPEED PHOTORESPONSE IN A REVERSE-BIASED INGAAS INP LASER STRUCTURE AT 1.54 MU-M - EXPERIMENT AND MODELING/, Applied physics letters, 63(1), 1993, pp. 12-14
Authors:
LANDHEER D
BARDWELL JA
SPROULE I
SCOTTTHOMAS J
KWOK W
LAU WM
Citation: D. Landheer et al., REDUCED INTERFACE STATE DENSITIES FOR REMOTE MICROWAVE PLASMA SILICON-NITRIDE, Canadian journal of physics, 70(10-11), 1992, pp. 795-798
Authors:
MCGREER KA
MOSS D
WILLIAMS RL
DION M
LANDHEER D
Citation: Ka. Mcgreer et al., WAVELENGTH AND THRESHOLD CURRENT VARIATION IN INHOMOGENEOUSLY PUMPED INGAAS ALGAAS SINGLE AND DOUBLE-QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS/, Canadian journal of physics, 70(10-11), 1992, pp. 908-913
Authors:
YE F
MOSS D
SIMMONS JG
JESSOP PE
LANDHEER D
CHAMPION HG
TEMPLETON I
CHATENOUD F
Citation: F. Ye et al., A 4-CHANNEL RIDGE-WAVE-GUIDE QUANTUM-WELL WAVELENGTH DIVISION DEMULTIPLEXING DETECTOR AND ITS OPTIMIZATION, Canadian journal of physics, 70(10-11), 1992, pp. 931-936
Authors:
HALLIDAY DP
MOSS D
CHARBONNEAU S
AERS GC
LANDHEER D
CHATENOUD F
CONN D
Citation: Dp. Halliday et al., ULTRAFAST ELECTRON-TUNNELING IN A REVERSE-BIASED, HIGH-EFFICIENCY QUANTUM-WELL LASER STRUCTURE, Canadian journal of physics, 70(10-11), 1992, pp. 985-992
Authors:
LANDHEER D
DEGEE AWJ
Citation: D. Landheer et Awj. Degee, ADHESION, FRICTION, AND WEAR, MRS bulletin, 16(10), 1991, pp. 36-40