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Results:
1-13
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Results: 13
Authors:
LANDHEER D
SAYEDI SM
LANDSBERGER LM
KAHRIZI M
Citation: D. Landheer et al., FOURIER-TRANSFORM INFRARED-SPECTROSCOPY OF CORONA-PROCESSED SILICON DIOXIDE FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 605-608
Authors:
NIKPOUR B
LANDSBERGER LM
HUBBARD TJ
KAHRIZI M
IFTIMIE A
Citation: B. Nikpour et al., CONCAVE CORNER COMPENSATION BETWEEN VERTICAL (010)-(001)PLANES ANISOTROPICALLY ETCHED IN SI(100), Sensors and actuators. A, Physical, 66(1-3), 1998, pp. 299-307
Authors:
PANDY A
LANDSBERGER LM
NIKPOUR B
PARANJAPE M
KAHRIZI M
Citation: A. Pandy et al., EXPERIMENTAL INVESTIGATION OF HIGH SI AL SELECTIVITY DURING ANISOTROPIC ETCHING IN TETRA-METHYL AMMONIUM HYDROXIDE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 868-872
Authors:
SAYEDI SM
LANDSBERGER LM
KAHRIZI M
BELKOUCH S
LANDHEER D
Citation: Sm. Sayedi et al., ELECTRICAL CHARACTERIZATION OF THIN SIO2-FILMS ON SILICON CREATED BY ANODIC OXYGEN CORONA DISCHARGE PROCESSING, Journal of the Electrochemical Society, 145(8), 1998, pp. 2937-2943
Authors:
SAYEDI SM
LANDHEER D
LANDSBERGER LM
KAHRIZI M
Citation: Sm. Sayedi et al., MECHANISMS OF FILM GROWTH-RATE ENHANCEMENT IN ANODIC AND CATHODIC CORONA-DISCHARGE OXIATION PROCESSES, Journal of the Electrochemical Society, 145(8), 1998, pp. 2944-2950
Authors:
BELKOUCH S
NGUYEN TK
LANDSBERGER LM
AKTIK C
JEAN C
KAHRIZI M
Citation: S. Belkouch et al., INTERFACE STATES DISTRIBUTION IN ELECTRICAL STRESSED OXYNITRIDED GATE-OXIDE, Journal of the Electrochemical Society, 145(7), 1998, pp. 2489-2493
Authors:
AHMAD H
ALKHALILI AJ
LANDSBERGER LM
KAHRIZI M
Citation: H. Ahmad et al., A 2-DIMENSIONAL MICROMACHINED ACCELEROMETER, IEEE transactions on instrumentation and measurement, 46(1), 1997, pp. 18-26
Authors:
NGUYEN TK
LANDSBERGER LM
JEAN C
LOGIUDICE V
Citation: Tk. Nguyen et al., EFFECTS OF FLUORINE IMPLANTS ON INDUCED CHARGE COMPONENTS IN GATE-OXIDES UNDER CONSTANT-CURRENT FOWLER-NORDHEIM STRESS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1432-1440
Authors:
NGUYEN TK
LANDSBERGER LM
BELKOUCH S
JEAN C
Citation: Tk. Nguyen et al., ELECTRICAL CHARACTERIZATION OF OXYNITRIDED GATE DIELECTRICS UNDER CONSTANT-CURRENT FOWLER-NORDHEIM STRESS, Journal of the Electrochemical Society, 144(9), 1997, pp. 3299-3304
Authors:
LANDSBERGER LM
NASEH S
KAHRIZI M
PARANJAPE M
Citation: Lm. Landsberger et al., ON HILLOCKS GENERATED DURING ANISOTROPIC ETCHING OF SI IN TMAH, Journal of microelectromechanical systems, 5(2), 1996, pp. 106-116
Authors:
PARANJAPE M
LANDSBERGER LM
KAHRIZI M
Citation: M. Paranjape et al., A CMOS-COMPATIBLE 2-D VERTICAL HALL MAGNETIC-FIELD SENSOR USING ACTIVE CARRIER CONFINEMENT AND POST-PROCESS MICROMACHINING, Sensors and actuators. A, Physical, 53(1-3), 1996, pp. 278-283
Authors:
NGUYEN TK
LANDSBERGER LM
LOGIUDICE V
JEAN C
Citation: Tk. Nguyen et al., ELECTRICAL CHARACTERIZATION OF FLUORINE-IMPLANTED GATE OXIDE STRUCTURES, Canadian journal of physics, 74, 1996, pp. 74-78
Authors:
NASEH S
LANDSBERGER LM
PARANJAPE M
KAHRIZI A
Citation: S. Naseh et al., EXPERIMENTAL INVESTIGATIONS OF ANISOTROPIC ETCHING OF SI IN TETRAMETHYL AMMONIUM HYDROXIDE, Canadian journal of physics, 74, 1996, pp. 79-84
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1-13
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