Citation: Je. Greene et Ne. Lee, SI(001) EPITAXY FROM HYPERTHERMAL BEAMS - CRYSTAL-GROWTH, DOPING, ANDELECTRONIC-PROPERTIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 58-64
Authors:
RAO MN
MCGUIGAN MA
ZHANG XH
SHAKED Z
KINNEY WA
BULLIARD M
LABOUE B
LEE NE
Citation: Mn. Rao et al., PRACTICAL APPROACHES TO REMOTE ASYMMETRIC INDUCTION IN STEROIDAL SIDE-CHAINS UTILIZING OXAZABOROLIDINE REAGENTS, Journal of organic chemistry, 62(13), 1997, pp. 4541-4545
Citation: Ne. Lee et al., SYNTHESIS, STEREOCHEMISTRY, AND BIOLOGICAL-ACTIVITY OF 1-ALPHA,23,25-TRIHYDROXY-24-OXOVITAMIN D-3, A MAJOR NATURAL METABOLITE OF 1-ALPHA,25-DIHYDROXYVITAMIN D-3, Biochemistry, 36(31), 1997, pp. 9429-9437
Authors:
KRUKEWICH K
SEXTON J
CAVIN K
LEE NE
COX B
Citation: K. Krukewich et al., THE SYSTEMS-ENGINEERING APPROACH TO THE INTEGRATION OF THE SPACE STATION REMOTE MANIPULATOR SYSTEM ON THE INTERNATIONAL-SPACE-STATION (ISS), Space technology, 16(1), 1996, pp. 31-48
Citation: Ne. Lee et al., SURFACE ROUGHENING DURING LOW-TEMPERATURE SI EPITAXIAL-GROWTH ON SINGULAR VS VICINAL SI(001) SUBSTRATES, Physical review. B, Condensed matter, 53(12), 1996, pp. 7876-7879
Citation: Ne. Lee et al., EVOLUTION OF SURFACE-ROUGHNESS IN EPITAXIAL SI0.7GE0.3(001) AS A FUNCTION OF GROWTH TEMPERATURE (200-600-DEGREES-C) AND SI(001) SUBSTRATE MISCUT, Journal of applied physics, 80(4), 1996, pp. 2199-2210
Citation: Ne. Lee et al., EPITAXIAL SI(001) GROWN AT 80-750 DEGREES-C BY ION-BEAM SPUTTER-DEPOSITION - CRYSTAL-GROWTH, DOPING, AND ELECTRONIC-PROPERTIES, Journal of applied physics, 80(2), 1996, pp. 769-780
Authors:
LEE NE
MATSUOKA M
SARDELA MR
TIAN F
GREENE JE
Citation: Ne. Lee et al., GROWTH, MICROSTRUCTURE, AND STRAIN RELAXATION IN LOW-TEMPERATURE EPITAXIAL SI1-XGEX ALLOYS DEPOSITED ON SI(001) FROM HYPERTHERMAL BEAMS, Journal of applied physics, 80(2), 1996, pp. 812-821
Citation: Ne. Lee et al., MOLECULAR-BEAM EPITAXY OF GAN(0001) UTILIZING NH3 AND OR NHX+ IONS - GROWTH-KINETICS AND DEFECT STRUCTURE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(5), 1995, pp. 2293-2302
Authors:
LU Q
BRAMBLETT TR
HASAN MA
LEE NE
GREENE JE
Citation: Q. Lu et al., B INCORPORATION IN GE(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXYFROM GE2H6 AND B2H6, Journal of applied physics, 78(10), 1995, pp. 6027-6032
Authors:
LU Q
BRAMBLETT TR
LEE NE
HASAN MA
KARASAWA T
GREENE JE
Citation: Q. Lu et al., B-DOPED SI(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6AND B2H6-B INCORPORATION AND ELECTRICAL-PROPERTIES, Journal of applied physics, 77(7), 1995, pp. 3067-3076
Authors:
BRAMBLETT TR
LU Q
LEE NE
TAYLOR N
HASAN MA
GREENE JE
Citation: Tr. Bramblett et al., GE(001) GAS-SOURCE MOLECULAR-BEAM EPITAXY ON GE(001)2X1 AND SI(001)2X1 FROM GE2H6 - GROWTH-KINETICS AND SURFACE ROUGHENING, Journal of applied physics, 77(4), 1995, pp. 1504-1513
Citation: Ne. Lee et Je. Greene, EFFECTS OF SB DOPING ON SI(001) SURFACE ROUGHENING AND EPITAXIAL THICKNESS AT LOW GROWTH TEMPERATURES (100-300-DEGREES-C), Applied physics letters, 67(17), 1995, pp. 2459-2461
Authors:
LEE NE
TOMASCH GA
XUE G
MARKERT LC
GREENE JE
Citation: Ne. Lee et al., CRYSTAL-GROWTH AND ELECTRONIC-PROPERTIES OF ULTRAHIGH-VACUUM ION-BEAMSPUTTER-DEPOSITED SB-DOPED SI(001)2X1, Applied physics letters, 64(11), 1994, pp. 1398-1400
Citation: A. Viso et al., KINETIC RESOLUTION OF RACEMIC DISUBSTITUTED 1-PYRROLINES VIA ASYMMETRIC REDUCTION WITH A CHIRAL TITANOCENE CATALYST, Journal of the American Chemical Society, 116(20), 1994, pp. 9373-9374
Citation: Ne. Lee et Sl. Buchwald, ASYMMETRIC HYDROGENATION OF ENAMINES WITH A CHIRAL TITANOCENE CATALYST, Journal of the American Chemical Society, 116(13), 1994, pp. 5985-5986