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Results: 1-25/26
Authors:
LEECH PW
REEVES GK
ZHOU W
RESSEL P
Citation: Pw. Leech et al., THERMAL-STABILITY OF PD ZN AND PT BASED CONTACTS TO P-IN0.53GA0.47AS/INP WITH VARIOUS BARRIER LAYERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 227-231
Authors:
LEECH PW
Citation: Pw. Leech, REACTIVE ION ETCHING OF PIEZOELECTRIC MATERIALS IN CF4 CHF3 PLASMAS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2037-2041
Authors:
JOHNSON CM
RIDGWAY MC
KURVER A
LEECH PW
SIMPSON PJ
Citation: Cm. Johnson et al., THERMAL ANNEALING OF WAVE-GUIDES FORMED BY ION-IMPLANTATION OF SILICA-ON-SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 670-674
Authors:
RESSEL P
LEECH PW
VEIT P
NEBAUER E
KLEIN A
KUPHAL E
REEVES GK
HARTNAGEL HL
Citation: P. Ressel et al., OHMIC PD ZN/AU/LAB6/AU CONTACTS ON P-TYPE IN0.53GA0.47AS - ELECTRICALAND METALLURGICAL PROPERTIES/, Journal of applied physics, 84(2), 1998, pp. 861-869
Authors:
LEECH PW
FAITH MF
JOHNSON CM
RIDGWAY MC
BAZYLENKO M
Citation: Pw. Leech et al., CHANNEL WAVE-GUIDES FORMED BY ION-IMPLANTATION OF PECVD GROWN SILICA, IEE proceedings. Optoelectronics, 144(2), 1997, pp. 97-100
Authors:
LEECH PW
REEVES GK
Citation: Pw. Leech et Gk. Reeves, EFFECT OF LAYER STRUCTURE ON THE ELECTRICAL-PROPERTIES OF CONTACTS TOP-TYPE IN0.53GA0.47AS INP/, Thin solid films, 298(1-2), 1997, pp. 9-13
Authors:
LEECH PW
RIDGWAY M
FAITH M
Citation: Pw. Leech et al., CHANNEL WAVE-GUIDES FORMED IN FUSED-SILICA AND SILICA-ON-SILICON BY SI, P AND GE ION-IMPLANTATION, IEE proceedings. Optoelectronics, 143(5), 1996, pp. 281-286
Authors:
KIBEL MH
LEECH PW
Citation: Mh. Kibel et Pw. Leech, X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF OPTICAL WAVE-GUIDE GLASSES, Surface and interface analysis, 24(9), 1996, pp. 605-610
Authors:
LEECH PW
FAITH M
RIDGWAY MC
LEISTIKO O
Citation: Pw. Leech et al., CHANNEL WAVE-GUIDES FORMED BY ION-IMPLANTATION OF 20 MOL-PERCENT GE-DOPED SILICA, Electronics Letters, 32(11), 1996, pp. 1000-1002
Authors:
JOHNSON CM
RIDGWAY MC
LEECH PW
Citation: Cm. Johnson et al., THERMAL ANNEALING OF IMPLANTATION-INDUCED COMPACTION FOR IMPROVED SILICA WAVE-GUIDE PERFORMANCE, Applied physics letters, 69(7), 1996, pp. 984-986
Authors:
RESSEL P
LEECH PW
REEVES GK
ZHOU W
KUPHAL E
Citation: P. Ressel et al., PD ZN/PD/AU AND PD/ZN/AU/LAB6/AU OHMIC CONTACTS TO P-TYPE IN0.53GA0.47AS/, Applied physics letters, 68(13), 1996, pp. 1841-1843
Authors:
LEECH PW
WITHAM LA
DOOLEY SP
JAMIESON DN
Citation: Pw. Leech et al., NUCLEAR MICROPROBE ANALYSIS OF HG1-XCDXTE METAL-SEMICONDUCTOR-METAL DETECTORS ON SUBSTRATES OF GAAS AND GAAS SI/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(1), 1995, pp. 21-25
Authors:
FAITH M
LEECH PW
FROST C
Citation: M. Faith et al., ELECTRICAL CHARACTERISTICS OF HG1-XCDXTE (X = 0.1 TO 0.8) GROWN ON GAAS(100) BY AN INTERDIFFUSED MULTILAYER PROCESS, Journal of materials science letters, 14(3), 1995, pp. 164-166
Authors:
LEECH PW
FAITH M
KEMENY PC
RIDGWAY MC
ELLIMAN RG
REEVES GK
ZHOU W
Citation: Pw. Leech et al., CHANNEL WAVE-GUIDES FORMED BY GERMANIUM IMPLANTATION IN FUSED-SILICA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 442-446
Authors:
REEVES GK
LEECH PW
HARRISON HB
Citation: Gk. Reeves et al., UNDERSTANDING THE SHEET RESISTANCE PARAMETER OF ALLOYED OHMIC CONTACTS USING A TRANSMISSION-LINE MODEL, Solid-state electronics, 38(4), 1995, pp. 745-751
Authors:
LEECH PW
REEVES GK
Citation: Pw. Leech et Gk. Reeves, THE MODIFIED SHEET RESISTANCE OF INDIUM CONTACTS TO N-TYPE HG1-XCDXTE, Solid-state electronics, 38(4), 1995, pp. 781-785
Authors:
LEECH PW
REEVES GK
Citation: Pw. Leech et Gk. Reeves, ELECTRICAL CHARACTERISTICS AND THERMAL-STABILITY OF OHMIC CONTACTS TOP-TYPE IN0.47GA0.53 AS/INP/, Journal of applied physics, 77(8), 1995, pp. 3908-3912
Authors:
LEECH PW
Citation: Pw. Leech, MODIFIED SHEET RESISTANCE OF OHMIC CONTACTS TO P-TYPE IN0.47GA0.53AS INP/, Journal of applied physics, 77(6), 1995, pp. 2544-2548
Authors:
LEECH PW
KEMENY PC
RIDGWAY MC
Citation: Pw. Leech et al., LOW-LOSS CHANNEL WAVE-GUIDES FABRICATED IN FUSED-SILICA BY GERMANIUM ION-IMPLANTATION, Electronics Letters, 31(15), 1995, pp. 1238-1240
Authors:
LEECH PW
Citation: Pw. Leech, ELECTRICAL-PROPERTIES OF IN YB/N-HG1-XCDXTE CONTACTS/, Journal of materials science. Materials in electronics, 5(4), 1994, pp. 226-228
Authors:
STUDD WB
JOHNSTON PN
BUBB IF
LEECH PW
Citation: Wb. Studd et al., STUDIES OF MOCVD GROWN HGCDMNTE BY ION-BEAM AND RELATED TECHNIQUES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 929-932
Authors:
LEECH PW
HEAZLE KD
DEACON GB
DICKSON RS
WEST BO
FAITH M
FROST CR
Citation: Pw. Leech et al., P-TYPE DOPING OF HG0.4CD0.6TE USING ET4SB2, Journal of crystal growth, 139(3-4), 1994, pp. 247-250
Authors:
LEECH PW
REEVES GK
KIBEL MH
Citation: Pw. Leech et al., PD ZN/PD/AU OHMIC CONTACTS TO P-TYPE IN0.47GA0.53AS/INP/, Journal of applied physics, 76(8), 1994, pp. 4713-4718
Authors:
LEECH PW
REEVES GK
Citation: Pw. Leech et Gk. Reeves, PROPERTIES OF HGTE AS A CONTACT LAYER TO N-HG1-XCDXTE, Semiconductor science and technology, 8(12), 1993, pp. 2097-2100
Authors:
DICKSON RS
HEAZLE KD
PAIN GN
DEACON GB
WEST BO
FALLON GD
ROWE RS
LEECH PW
FAITH M
Citation: Rs. Dickson et al., ANTIMONY SOURCES FOR MOCVD - THE USE OF ET4SB2 AS A P-TYPE DOPANT FORHG1-XCDXTE AND CRYSTAL-STRUCTURE OF THE ADDUCT [ET4SB2.2CDI2]N, Journal of organometallic chemistry, 449(1-2), 1993, pp. 131-139