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Results: 1-9 |
Results: 9
LOW-VOLTAGE ELECTRON-BEAM LITHOGRAPHY WITH SCANNING-TUNNELING-MICROSCOPY IN AIR - A NEW METHOD FOR PRODUCING STRUCTURES WITH HIGH ASPECT RATIOS
Authors: KRAGLER K GUNTHER E LEUSCHNER R FALK G VONSEGGERN H SAEMANNISCHENKO G
Citation: K. Kragler et al., LOW-VOLTAGE ELECTRON-BEAM LITHOGRAPHY WITH SCANNING-TUNNELING-MICROSCOPY IN AIR - A NEW METHOD FOR PRODUCING STRUCTURES WITH HIGH ASPECT RATIOS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1327-1330
BILAYER RESIST PROCESS FOR EXPOSURE WITH LOW-VOLTAGE ELECTRONS (STM-LITHOGRAPHY)
Authors: LEUSCHNER R GUNTHER E FALK G HAMMERSCHMIDT A KRAGLER K RANGELOW IW ZIMMERMANN J
Citation: R. Leuschner et al., BILAYER RESIST PROCESS FOR EXPOSURE WITH LOW-VOLTAGE ELECTRONS (STM-LITHOGRAPHY), Microelectronic engineering, 30(1-4), 1996, pp. 447-450
NEUROFASCIN INDUCES NEURITES BY HETEROPHILIC INTERACTIONS WITH AXONALNRCAM WHILE NRCAM REQUIRES F11 ON THE AXONAL SURFACE TO EXTEND NEURITES
Authors: VOLKMER H LEUSCHNER R ZACHARIAS U RATHJEN FG
Citation: H. Volkmer et al., NEUROFASCIN INDUCES NEURITES BY HETEROPHILIC INTERACTIONS WITH AXONALNRCAM WHILE NRCAM REQUIRES F11 ON THE AXONAL SURFACE TO EXTEND NEURITES, The Journal of cell biology, 135(4), 1996, pp. 1059-1069
BILAYER RESIST BASED ON WET SILYLATION (CARL PROCESS) FOR E-BEAM LITHOGRAPHY
Authors: LEUSCHNER R SCHMIDT E OHLMEYER H SEZI R IRMSCHER M
Citation: R. Leuschner et al., BILAYER RESIST BASED ON WET SILYLATION (CARL PROCESS) FOR E-BEAM LITHOGRAPHY, Microelectronic engineering, 27(1-4), 1995, pp. 385-388
PATTERNING OF AN ELECTRON-BEAM RESIST WITH A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR
Authors: KRAGLER K GUNTHER E LEUSCHNER R FALK G VONSEGGERN H SAEMANNISCHENKO G
Citation: K. Kragler et al., PATTERNING OF AN ELECTRON-BEAM RESIST WITH A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR, Thin solid films, 264(2), 1995, pp. 259-263
SCANNING-TUNNELING-MICROSCOPY BASED LITHOGRAPHY EMPLOYING AMORPHOUS HYDROGENATED CARBON AS A HIGH-RESOLUTION RESIST MASK
Authors: KRAGLER K GUNTHER E LEUSCHNER R FALK G HAMMERSCHMIDT A VONSEGGEM H SAEMANNISCHENKO G
Citation: K. Kragler et al., SCANNING-TUNNELING-MICROSCOPY BASED LITHOGRAPHY EMPLOYING AMORPHOUS HYDROGENATED CARBON AS A HIGH-RESOLUTION RESIST MASK, Applied physics letters, 67(8), 1995, pp. 1163-1165
THE AXONAL RECOGNITION MOLECULE F11 IS A MULTIFUNCTIONAL PROTEIN - SPECIFIC DOMAINS MEDIATE INTERACTIONS WITH NG-CAM AND RESTRICTIN
Authors: BRUMMENDORF T HUBERT M TREUBERT U LEUSCHNER R TARNOK A RATHJEN FG
Citation: T. Brummendorf et al., THE AXONAL RECOGNITION MOLECULE F11 IS A MULTIFUNCTIONAL PROTEIN - SPECIFIC DOMAINS MEDIATE INTERACTIONS WITH NG-CAM AND RESTRICTIN, Neuron, 10(4), 1993, pp. 711-727
PATTERNING OF ORGANIC LAYERS USING NEGATIVE AND POSITIVE WORKING TOP-CARL PROCESS
Authors: LEUSCHNER R AHNE H MARQUARDT U NICKEL U SCHMIDT E SEBALD M SEZI R
Citation: R. Leuschner et al., PATTERNING OF ORGANIC LAYERS USING NEGATIVE AND POSITIVE WORKING TOP-CARL PROCESS, Microelectronic engineering, 21(1-4), 1993, pp. 255-258
PATTERNING OF ORGANIC LAYERS USING NEGATIVE AND POSITIVE WORKING TOP-CARL PROCESS
Authors: LEUSCHNER R AHNE H MARQUARDT U NICKEL U SCHMIDT E SEBALD M SEZI R
Citation: R. Leuschner et al., PATTERNING OF ORGANIC LAYERS USING NEGATIVE AND POSITIVE WORKING TOP-CARL PROCESS, Microelectronic engineering, 20(4), 1993, pp. 305-319
Risultati: 1-9 |