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Results: 1-13 |
Results: 13
POWER-SUPPLY SOURCE FOR ELECTROMAGNETS
Authors: LEVCHENKO VI KLIMENKOV VP
Citation: Vi. Levchenko et Vp. Klimenkov, POWER-SUPPLY SOURCE FOR ELECTROMAGNETS, Instruments and experimental techniques, 40(2), 1997, pp. 217-218
EFFECT OF VACUUM ANNEALING ON THE ELECTRICAL-PROPERTIES OF LEAD SULFIDE EPITAXIAL LAYERS
Authors: LEVCHENKO VI POSTNOVA LI
Citation: Vi. Levchenko et Li. Postnova, EFFECT OF VACUUM ANNEALING ON THE ELECTRICAL-PROPERTIES OF LEAD SULFIDE EPITAXIAL LAYERS, Inorganic materials, 32(9), 1996, pp. 934-935
FACILITY FOR GROWING EPITAXIAL-FILMS OF IV-VI COMPOUNDS
Authors: LEVCHENKO VI POSTNOVA LI
Citation: Vi. Levchenko et Li. Postnova, FACILITY FOR GROWING EPITAXIAL-FILMS OF IV-VI COMPOUNDS, Instruments and experimental techniques, 38(6), 1995, pp. 794-796
THERMOSTATIC CONTROL OF REFERENCE THERMOCOUPLE JUNCTIONS
Authors: LEVCHENKO VI KLIMENKOV VP
Citation: Vi. Levchenko et Vp. Klimenkov, THERMOSTATIC CONTROL OF REFERENCE THERMOCOUPLE JUNCTIONS, Instruments and experimental techniques, 38(6), 1995, pp. 804-806
MATRIX REPRESENTATION OF FUZZY PREDICATES AND ITS APPLICATION IN EXPERT-SYSTEMS
Authors: LEVCHENKO VI SAVINOV AA
Citation: Vi. Levchenko et Aa. Savinov, MATRIX REPRESENTATION OF FUZZY PREDICATES AND ITS APPLICATION IN EXPERT-SYSTEMS, Journal of computer & systems sciences international, 32(6), 1994, pp. 133-146
ASPECTS OF THE ABSORPTION OF OXYGEN BY LEAD SULFIDE FILMS
Authors: LEVCHENKO VI POSTNOVA LI DIKAREVA VV
Citation: Vi. Levchenko et al., ASPECTS OF THE ABSORPTION OF OXYGEN BY LEAD SULFIDE FILMS, Semiconductors, 28(5), 1994, pp. 503-505
DETERMINATION OF THE ACTIVATION-ENERGY FOR OXYGEN DIFFUSION IN LEAD SULFIDE FILMS
Authors: LEVCHENKO VI POSTNOVA LI DIKAREVA VV
Citation: Vi. Levchenko et al., DETERMINATION OF THE ACTIVATION-ENERGY FOR OXYGEN DIFFUSION IN LEAD SULFIDE FILMS, Semiconductors, 28(10), 1994, pp. 1018-1020
CONTROL OF PARAMETERS OF POROUS SILICON L UMINESCENCE IN THE VISIBLE SPECTRUM DOMAIN
Authors: BONDARENKO VP DOROFEEV AM LEVCHENKO VI LUKOMSKII AI POSTNOVA LI
Citation: Vp. Bondarenko et al., CONTROL OF PARAMETERS OF POROUS SILICON L UMINESCENCE IN THE VISIBLE SPECTRUM DOMAIN, Pis'ma v Zurnal tehniceskoj fiziki, 20(8), 1994, pp. 61-65
HETEROEPITAXY OF LEAD SULFIDE ON SILICON
Authors: BONDARENKO VP VOROZOV NN DIKAREVA VV DOROFEEV AM LEVCHENKO VI POSTNOVA LI TROYANOVA GN
Citation: Vp. Bondarenko et al., HETEROEPITAXY OF LEAD SULFIDE ON SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 20(10), 1994, pp. 51-55
POTENTIALITY FOR THE CREATION OF GALVANOM AGNETIC OXYGEN SENSORS BASED ON LEAD SULFIDE EPITAXIAL-FILMS
Authors: LEVCHENKO VI POSTNOVA LI DIKAREVA VV
Citation: Vi. Levchenko et al., POTENTIALITY FOR THE CREATION OF GALVANOM AGNETIC OXYGEN SENSORS BASED ON LEAD SULFIDE EPITAXIAL-FILMS, Zurnal tehniceskoj fiziki, 64(10), 1994, pp. 178-180
MULTIPIN VACUUM INPUT
Authors: LEVCHENKO VI
Citation: Vi. Levchenko, MULTIPIN VACUUM INPUT, Instruments and experimental techniques, 37(4), 1994, pp. 503-503
HEATER FOR A MOLECULAR-BEAM SOURCE
Authors: LEVCHENKO VI
Citation: Vi. Levchenko, HEATER FOR A MOLECULAR-BEAM SOURCE, Instruments and experimental techniques, 37(4), 1994, pp. 517-518
DIRECTIONAL INHOMOGENEITIES IN THE CHARGE-CARRIER CONCENTRATION IN EPITAXIAL LEAD SULFIDE FILMS
Authors: LEVCHENKO VI POSTNOVA LI DIKAREVA VV CHERNAYA TL PULYAEVA IV
Citation: Vi. Levchenko et al., DIRECTIONAL INHOMOGENEITIES IN THE CHARGE-CARRIER CONCENTRATION IN EPITAXIAL LEAD SULFIDE FILMS, Inorganic materials, 29(11), 1993, pp. 1310-1312
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