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Results:
1-14
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Results: 14
Authors:
LIE DYC
Citation: Dyc. Lie, DOPING AND PROCESSING EPITAXIAL GEXSI1-X FILMS ON SI(100) BY ION-IMPLANTATION FOR SI-BASED HETEROJUNCTION DEVICES APPLICATIONS, Journal of electronic materials, 27(5), 1998, pp. 377-401
Authors:
IM S
SONG JH
LIE DYC
EISEN F
ATWATER H
NICOLET MA
Citation: S. Im et al., SIGEC ALLOY LAYER FORMATION BY HIGH-DOSE C+ IMPLANTATIONS INTO PSEUDOMORPHIC METASTABLE GE0.08SI0.92 ON SI(100), Journal of applied physics, 81(4), 1997, pp. 1700-1703
Authors:
LIE DYC
SONG JH
EISEN F
NICOLET MA
THEODORE ND
Citation: Dyc. Lie et al., STRAIN EVOLUTION AND DOPANT ACTIVATION IN P-IMPLANTED METASTABLE PSEUDOMORPHIC SI(100) G(0.12)SI(0.88)/, Journal of electronic materials, 25(1), 1996, pp. 87-92
Authors:
LIE DYC
THEODORE ND
SONG JH
Citation: Dyc. Lie et al., DOPANT ACTIVATION AND STRAIN RELAXATION IN P-IMPLANTED METASTABLE PSEUDOMORPHIC GE0.12SI0.88 GROWN ON SI(100), Applied surface science, 92, 1996, pp. 557-565
Authors:
IM S
LIE DYC
NICOLET MA
Citation: S. Im et al., ADVANTAGE OF SHORT OVER LONG ANNEALING TO ACTIVATE AS IMPLANTED IN METASTABLE PSEUDOMORPHIC GE0.08SI0.92 LAYERS ON SI(100), Journal of applied physics, 79(9), 1996, pp. 7389-7391
Authors:
LIE DYC
IM S
NICOLET MA
THEODORE ND
Citation: Dyc. Lie et al., SHORT AND LONG ANNEALING OF HIGH-DOSE ARSENIC-IMPLANTED PSEUDOMORPHICGEXSI1-X ON SI(100), Journal of applied physics, 79(11), 1996, pp. 8341-8348
Authors:
LIE DYC
SONG JH
VANTOMME A
EISEN F
NICOLET MA
THEODORE ND
CARNS TK
WANG KL
Citation: Dyc. Lie et al., DEPENDENCE OF DAMAGE AND STRAIN ON THE TEMPERATURE OF SI IRRADIATION IN EPITAXIAL GE0.10SI0.90 FILMS ON SI(100), Journal of applied physics, 77(6), 1995, pp. 2329-2338
Authors:
LIE DYC
THEODORE ND
SONG JH
NICOLET MA
Citation: Dyc. Lie et al., SOLID-PHASE EPITAXIAL REGROWTH AND DOPANT ACTIVATION OF P-IMPLANTED METASTABLE PSEUDOMORPHIC GE0.12SI0.88 ON SI(100), Journal of applied physics, 77(10), 1995, pp. 5160-5166
Authors:
LIE DYC
SONG JH
NICOLET MA
THEODORE ND
Citation: Dyc. Lie et al., ADVANTAGE OF RAPID THERMAL ANNEALING OVER FURNACE ANNEALING FOR P-IMPLANTED METASTABLE SI GE0.12SI0.88/, Applied physics letters, 66(5), 1995, pp. 592-594
Authors:
LIE DYC
VANTOMME A
EISEN F
VREELAND T
NICOLET MA
CARNS TK
WANG KL
HOLLANDER B
Citation: Dyc. Lie et al., DAMAGE AND STRAIN IN PSEUDOMORPHIC VS RELAXED GEXSI1-X LAYERS ON SI(100) GENERATED BY SI ION IRRADIATION, Journal of electronic materials, 23(4), 1994, pp. 369-373
Authors:
CARNS TK
CHUN SK
TANNER MO
WANG KL
KAMINS TI
TURNER JE
LIE DYC
NICOLET MA
WILSON RG
Citation: Tk. Carns et al., HOLE MOBILITY MEASUREMENTS IN HEAVILY-DOPED SI1-XGEX STRAINED LAYERS, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1273-1281
Authors:
LI HS
CHEN YW
WANG KL
LIE DYC
Citation: Hs. Li et al., INTERSUBBAND TRANSITIONS IN PSEUDOMORPHIC INGAAS GAAS/ALGAAS MULTIPLESTEP QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(5), 1993, pp. 1840-1843
Authors:
LIE DYC
VANTOMME A
EISEN F
VREELAND T
NICOLET MA
CARNS TK
ARBETENGELS V
WANG KL
Citation: Dyc. Lie et al., DAMAGE AND STRAIN IN EPITAXIAL GEXSI1-X FILMS IRRADIATED WITH SI, Journal of applied physics, 74(10), 1993, pp. 6039-6045
Authors:
LIU WS
CHEN JS
LIE DYC
NICOLET MA
Citation: Ws. Liu et al., GE-EPILAYER OF HIGH-QUALITY ON A SI-SUBSTRATE BY SOLID-PHASE EPITAXY, Applied physics letters, 63(10), 1993, pp. 1405-1407
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