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Results: 1-25/37
Authors:
BUDA B
WANG C
WREDE W
LEIFELD O
AS DJ
SCHIKORA D
LISCHKA K
Citation: B. Buda et al., THE INFLUENCE OF THE EARLY-STAGE OF ZNSE GROWTH ON GAAS(001) ON THE DEFECT-RELATED LUMINESCENCE, Semiconductor science and technology, 13(8), 1998, pp. 921-926
Authors:
HOLST J
ECKEY L
HOFFMANN A
BROSER I
SCHOTTKER B
AS DJ
SCHIKORA D
LISCHKA K
Citation: J. Holst et al., MECHANISMS OF OPTICAL GAIN IN CUBIC GALLIUM NITRITE, Applied physics letters, 72(12), 1998, pp. 1439-1441
Authors:
SIEGLE H
LOA I
THURIAN P
KACZMARCZYK G
FILIPPIDIS L
HOFFMANN A
THOMSEN C
SCHIKORA D
HANKELN M
LISCHKA K
Citation: H. Siegle et al., DEFECT MODES AND DISORDER-INDUCED RAMAN-SCATTERING IN GAN, Zeitschrift für physikalische Chemie, 200, 1997, pp. 187-193
Authors:
LISCHKA K
Citation: K. Lischka, EPITAXIAL ZNSE AND CUBIC GAN - WIDE-BAND-GAP SEMICONDUCTORS WITH SIMILAR PROPERTIES, Physica status solidi. b, Basic research, 202(2), 1997, pp. 673-681
Authors:
NIGGEMEIER U
LISCHKA K
PLOTZ WM
HOLY V
Citation: U. Niggemeier et al., X-RAY REFLECTOMETER FOR THE DIAGNOSTICS OF THIN-FILMS DURING GROWTH, Journal of applied crystallography, 30, 1997, pp. 905-908
Authors:
AS DJ
SCHMILGUS F
WANG C
SCHOTTKER B
SCHIKORA D
LISCHKA K
Citation: Dj. As et al., THE NEAR-BAND-EDGE PHOTOLUMINESCENCE OF CUBIC GAN EPILAYERS, Applied physics letters, 70(10), 1997, pp. 1311-1313
Authors:
VONORTENBERG M
PORTUGALL O
PUHLMANN N
MUELLER HU
LUTHER S
BARCZEWSKI M
MACHEL G
THIEDE M
IMANAKA Y
SHIMAMOTO Y
NOJIRI H
MIURA N
SCHIKORA D
WIDMER T
LISCHKA K
Citation: M. Vonortenberg et al., INVESTIGATION OF HGSE HGSE-FE QUANTUM-WELLS AND SUPER LATTICES/, Physica. B, Condensed matter, 216(3-4), 1996, pp. 384-387
Authors:
BUDA B
LEIFELD O
VOLLMEKE S
SCHMILGUS F
AS DJ
SCHIKORA D
LISCHKA K
Citation: B. Buda et al., INITIAL ROUGHNESS AND RELAXATION BEHAVIOR OF MBE GROWN ZNSE GAAS/, Acta Physica Polonica. A, 90(5), 1996, pp. 997-1001
Authors:
ZVARA M
GRILL R
HLIDEK P
HOSCHL P
LANG M
LISCHKA K
Citation: M. Zvara et al., MAGNETOCONDUCTANCE SPECTROSCOPY OF A NARROW-GAP HG1-XCDXTE (X-APPROXIMATE-TO-0.2) MIS DEVICE, Semiconductor science and technology, 11(11), 1996, pp. 1718-1724
Authors:
AS DJ
SCHIKORA D
GREINER A
LUBBERS M
MIMKES J
LISCHKA K
Citation: Dj. As et al., P-TYPE AND N-TYPE CUBIC GAN EPILAYERS ON GAAS, Physical review. B, Condensed matter, 54(16), 1996, pp. 11118-11121
Authors:
SCHIKORA D
HANKELN M
AS DJ
LISCHKA K
LITZ T
WAAG A
BUHROW T
HENNEBERGER F
Citation: D. Schikora et al., EPITAXIAL-GROWTH AND OPTICAL-TRANSITIONS OF CUBIC GAN FILMS, Physical review. B, Condensed matter, 54(12), 1996, pp. 8381-8384
Authors:
SCHIKORA D
WIDMER T
PROTT C
LISCHKA K
MACHEL G
SCHAFER P
LUTHER S
VONORTENBERG M
Citation: D. Schikora et al., GROWTH AND PROPERTIES OF HGSE-FE QUANTUM-WELLS AND SUPERLATTICES, Solid-state electronics, 40(1-8), 1996, pp. 63-67
Authors:
SCHIKORA D
WIDMER T
LISCHKA K
SCHAFER P
MACHEL G
LUTHER S
VONORTENBERG M
Citation: D. Schikora et al., MOLECULAR-BEAM EPITAXY OF MERCURY-IRON SELENIDE LAYERS AND QUANTUM-WELLS, Journal of crystal growth, 159(1-4), 1996, pp. 959-966
Authors:
TELES LK
SCOLFARO LMR
ENDERLEIN R
LEITE JR
JOSIEK A
SCHIKORA D
LISCHKA K
Citation: Lk. Teles et al., STRUCTURAL-PROPERTIES OF CUBIC GAN EPITAXIAL LAYERS GROWN ON BETA-SIC, Journal of applied physics, 80(11), 1996, pp. 6322-6328
Authors:
TABATA A
ENDERLEIN R
LEITE JR
DASILVA SW
GALZERANI JC
SCHIKORA D
KLOIDT M
LISCHKA K
Citation: A. Tabata et al., COMPARATIVE RAMAN STUDIES OF CUBIC AND HEXAGONAL GAN EPITAXIAL LAYERS, Journal of applied physics, 79(8), 1996, pp. 4137-4140
Authors:
BELAS E
FRANC J
GRILL R
TOTH A
HOSCHL P
SITTER H
MORAVEC P
LISCHKA K
Citation: E. Belas et al., MINORITY-CARRIER DIFFUSION LENGTH AT P-N-JUNCTIONS PRODUCED IN P-CD0.8HG0.2TE BY ION-BEAM MILLING, Inorganic materials, 32(8), 1996, pp. 836-839
Authors:
WIDMER T
SCHIKORA D
PROTT C
SCHOTTKER B
LISCHKA K
MACHEL G
LUTHER S
VONORTENBERG M
Citation: T. Widmer et al., MOLECULAR-BEAM EPITAXY OF IRON-DOPED HGSE LAYERS, Semiconductor science and technology, 10(9), 1995, pp. 1264-1268
INTERFACE-TRAP CONDUCTANCE SPECTROSCOPY OF A NARROW-GAP HG1-XCDXTE (X-APPROXIMATE-TO-0.2) MIS DEVICE
Authors:
ZVARA M
GRILL R
HLIDEK P
HOSCHL P
LANG M
LISCHKA K
Citation: M. Zvara et al., INTERFACE-TRAP CONDUCTANCE SPECTROSCOPY OF A NARROW-GAP HG1-XCDXTE (X-APPROXIMATE-TO-0.2) MIS DEVICE, Semiconductor science and technology, 10(8), 1995, pp. 1145-1150
Authors:
PLOTZ WM
KOPPENSTEINER E
KIBBEL H
PRESTING H
BAUER G
LISCHKA K
Citation: Wm. Plotz et al., AN INVESTIGATION OF X-RAY REFLECTIVITY AND DIFFRACTION FROM ELECTROLUMINESCENT SHORT-PERIOD SI-GE SUPERLATTICE STRUCTURES, Semiconductor science and technology, 10(12), 1995, pp. 1614-1620
Authors:
SCHIKORA D
WIDMER T
LISCHKA K
SCHAFER P
MACHEL G
LUTHER S
VONORTENBERG M
Citation: D. Schikora et al., STRUCTURAL AND PHYSICAL-PROPERTIES OF MERCURY-IRON SELENIDE LAYERS AND QUANTUM-WELLS, Physical review. B, Condensed matter, 52(16), 1995, pp. 12072-12080
Authors:
SIEGLE H
ECKEY L
HOFFMANN A
THOMSEN C
MEYER BK
SCHIKORA D
HANKELN M
LISCHKA K
Citation: H. Siegle et al., QUANTITATIVE-DETERMINATION OF HEXAGONAL MINORITY PHASE IN CUBIC GAN USING RAMAN-SPECTROSCOPY, Solid state communications, 96(12), 1995, pp. 943-949
Authors:
PLOTZ WM
LISCHKA K
Citation: Wm. Plotz et K. Lischka, CHARACTERIZATION OF THIN-FILMS AND MULTILAYERS BY SPECULAR X-RAY REFLECTIVITY, Journal de physique. III, 4(9), 1994, pp. 1503-1511
Authors:
PLOTZ W
HOLY V
HOOGENHOF WVD
LISCHKA K
Citation: W. Plotz et al., X-RAY CHARACTERIZATION OF SEMICONDUCTOR SURFACES AND INTERFACES, Journal de physique. III, 4(9), 1994, pp. 1565-1571
Authors:
LISCHKA K
FANTNER EJ
Citation: K. Lischka et Ej. Fantner, HIGH-RESOLUTION X-RAY CHARACTERIZATION OF MATERIALS, Applied physics. A, Solids and surfaces, 58(3), 1994, pp. 119-120
Authors:
LANG M
SCHIKORA D
GIFTGE C
WIDMER T
FORSTNER A
BRUNTHALER G
VONORTENBERG M
LISCHKA K
Citation: M. Lang et al., MOLECULAR-BEAM EPITAXY OF ZNS ON (001)GAAS USING ELEMENTAL SOURCES, Semiconductor science and technology, 9(12), 1994, pp. 2229-2232