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Results:
1-8
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Results: 8
Authors:
YOON GW
LO GQ
KIM J
HAN LK
KWONG DL
Citation: Gw. Yoon et al., FORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT, IEEE electron device letters, 15(8), 1994, pp. 266-268
Authors:
LO GQ
KWONG DL
FAZAN PC
MATHEWS VK
SANDLER N
Citation: Gq. Lo et al., HIGHLY RELIABLE, HIGH-C DRAM STORAGE CAPACITORS WITH CVD TA2O5 FILMS ON RUGGED POLYSILICON, IEEE electron device letters, 14(5), 1993, pp. 216-218
Authors:
JOSHI AB
YOON GW
KIM JH
LO GQ
KWONG DL
Citation: Ab. Joshi et al., HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1437-1445
Authors:
LO GQ
JOSHI AB
KWONG DL
Citation: Gq. Lo et al., RADIATION HARDNESS OF MOSFETS WITH N2O-NITRIDED GATE OXIDES, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1565-1567
Authors:
ITOH S
LO GQ
KWONG DL
MATHEWS VK
FAZAN PC
Citation: S. Itoh et al., FORMATION OF HIGH-QUALITY OXIDE NITRIDE STACKED LAYERS ON RUGGED POLYSILICON ELECTRODES BY RAPID THERMAL-OXIDATION, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1176-1178
Authors:
LO GQ
KWONG DL
LEE S
Citation: Gq. Lo et al., DEGRADATION OF METAL-OXIDE SEMICONDUCTOR CHARACTERISTICS DUE TO BOROPHOSPHOSILICATE-GLASS REFLOW IN O2-CONTAINING AMBIENT, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 1032-1035
Authors:
KIM J
JOSHI AB
LO GQ
KWONG DL
LEE S
Citation: J. Kim et al., ELECTRICAL-PROPERTIES OF SI-IMPLANTED GATE OXIDES, Electronics Letters, 29(1), 1993, pp. 34-35
Authors:
LO GQ
KWONG DL
MATHEWS VK
FAZAN PC
DITALI A
Citation: Gq. Lo et al., DYNAMIC-STRESS-INDUCED DIELECTRIC-BREAKDOWN IN ULTRATHIN NITRIDE OXIDE STACKED FILMS DEPOSITED ON RUGGED POLYSILICON, IEEE electron device letters, 13(4), 1992, pp. 183-185
Risultati:
1-8
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