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Results:
1-8
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Results: 8
Authors:
OR SW
CHAN HLW
LO VC
YUEN CW
Citation: Sw. Or et al., ULTRASONIC WIRE-BOND QUALITY MONITORING USING PIEZOELECTRIC SENSOR, Sensors and actuators. A, Physical, 65(1), 1998, pp. 69-75
Authors:
LO VC
SUN JZ
Citation: Vc. Lo et Jz. Sun, SIMULATION OF UPHILL DIFFUSION BEHAVIOR OF SI-IMPLANTED GAAS, Modelling and simulation in materials science and engineering, 4(6), 1996, pp. 613-621
Authors:
LO VC
PAN MX
WONG SP
LAM YW
Citation: Vc. Lo et al., MODELING OF ARGON-IMPLANTATION-INDUCED BORON REDISTRIBUTION IN SILICON, Modelling and simulation in materials science and engineering, 4(2), 1996, pp. 179-191
Authors:
LO VC
WONG YW
CHO HC
CHEN YQ
HO SM
CHAN PW
TONG KY
Citation: Vc. Lo et al., EXCIMER-LASER ASSISTED SPIN-ON DOPING OF BORON INTO SILICON, Semiconductor science and technology, 11(9), 1996, pp. 1285-1290
Authors:
LO VC
WONG SP
LAM YW
Citation: Vc. Lo et al., MODELING OF DAMAGE ENHANCED DIFFUSION OF IMPLANTED BORON IN SILICON, Modelling and simulation in materials science and engineering, 2(3), 1994, pp. 395-408
Authors:
MA CS
CHAN PW
LO VC
ONG CW
WONG SP
Citation: Cs. Ma et al., DEEP-LEVEL PHOTOLUMINESCENCE STUDIES OF UNDOPED AND TIN-DOPED (LEC) INP, Journal of materials science. Materials in electronics, 5(4), 1994, pp. 215-220
Authors:
MA CS
CHAN PW
LO VC
ONG CW
WONG SP
Citation: Cs. Ma et al., INVESTIGATION OF THE 1.20-EV PHOTOLUMINESCENCE BAND IN RAPID THERMAL ANNEALED INP, Journal of electronic materials, 23(5), 1994, pp. 459-464
Authors:
WONG SP
LO VC
LAM YW
Citation: Sp. Wong et al., SIMS STUDY OF IMPLANTATION-INDUCED BORON REDISTRIBUTION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 487-490
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1-8
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