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Results: 1-25 | 26-45
Results: 1-25/45
THE EFFECT OF SUBSTRATE BIAS IN AMORPHOUS-CARBON FILMS PREPARED BY MAGNETRON SPUTTERING AND MONITORED BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY
Authors: GIOTI M LOGOTHETIDIS S
Citation: M. Gioti et S. Logothetidis, THE EFFECT OF SUBSTRATE BIAS IN AMORPHOUS-CARBON FILMS PREPARED BY MAGNETRON SPUTTERING AND MONITORED BY IN-SITU SPECTROSCOPIC ELLIPSOMETRY, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 444-448
POSTGROWTH MODIFICATION OF AMORPHOUS-CARBON FILMS UNDER ION-BEAM BOMBARDMENT - GRAIN-SIZE DEPENDENCE ON THE FILM THICKNESS
Authors: LOGOTHETIDIS S LIOUTAS CB GIOTI M
Citation: S. Logothetidis et al., POSTGROWTH MODIFICATION OF AMORPHOUS-CARBON FILMS UNDER ION-BEAM BOMBARDMENT - GRAIN-SIZE DEPENDENCE ON THE FILM THICKNESS, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 449-453
OPTICAL-PROPERTIES AND TEMPERATURE-DEPENDENCE OF THE INTERBAND-TRANSITIONS OF 3C-SIC AND 6H-SIC IN THE ENERGY REGION 5 TO 10 EV
Authors: PETALAS J LOGOTHETIDIS S GIOTI M JANOWITZ C
Citation: J. Petalas et al., OPTICAL-PROPERTIES AND TEMPERATURE-DEPENDENCE OF THE INTERBAND-TRANSITIONS OF 3C-SIC AND 6H-SIC IN THE ENERGY REGION 5 TO 10 EV, Physica status solidi. b, Basic research, 209(2), 1998, pp. 499-521
LOW-FREQUENCY NOISE IN SCHOTTKY-BARRIER CONTACTS OF TITANIUM NITRIDE ON N-TYPE SILICON
Authors: FARMAKIS FV BRINI J MATHIEU N KAMARINOS G DIMITRIADIS CA LOGOTHETIDIS S
Citation: Fv. Farmakis et al., LOW-FREQUENCY NOISE IN SCHOTTKY-BARRIER CONTACTS OF TITANIUM NITRIDE ON N-TYPE SILICON, Semiconductor science and technology (Print), 13(11), 1998, pp. 1284-1289
OXIDATION AND STRUCTURAL-CHANGES IN FCC TINX THIN-FILMS STUDIED WITH X-RAY REFLECTIVITY
Authors: LOGOTHETIDIS S STERGIOUDIS G PATSALAS P
Citation: S. Logothetidis et al., OXIDATION AND STRUCTURAL-CHANGES IN FCC TINX THIN-FILMS STUDIED WITH X-RAY REFLECTIVITY, Surface & coatings technology, 101(1-3), 1998, pp. 295-299
STUDIES WITH NONDESTRUCTIVE TECHNIQUES OF THE COMPOSITION, INITIAL-STAGES OF GROWTH AND SURFACE-TOPOGRAPHY OF THIN AMORPHOUS-CARBON FILMS
Authors: LOGOTHETIDIS S STERGIOUDIS G VOUROUTZIS N
Citation: S. Logothetidis et al., STUDIES WITH NONDESTRUCTIVE TECHNIQUES OF THE COMPOSITION, INITIAL-STAGES OF GROWTH AND SURFACE-TOPOGRAPHY OF THIN AMORPHOUS-CARBON FILMS, Surface & coatings technology, 101(1-3), 1998, pp. 486-490
TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE STRUCTURAL CHARACTERISTICS OF AMORPHOUS TETRAHEDRAL CARBON-FILMS
Authors: LIOUTAS CB VOUROUTZIS N LOGOTHETIDIS S LEFAKIS H
Citation: Cb. Lioutas et al., TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE STRUCTURAL CHARACTERISTICS OF AMORPHOUS TETRAHEDRAL CARBON-FILMS, Thin solid films, 319(1-2), 1998, pp. 144-147
STABILITY AND INTERDIFFUSION AT THE A-C SI(100) INTERFACE/
Authors: LOGOTHETIDIS S GIOTI M KELIRES PC
Citation: S. Logothetidis et al., STABILITY AND INTERDIFFUSION AT THE A-C SI(100) INTERFACE/, Journal of non-crystalline solids, 230, 1998, pp. 1113-1117
STRUCTURAL, MAGNETOTRANSPORT, AND OPTICAL-PROPERTIES OF SPUTTERED CO CU MULTILAYERS EXAMINED AS A FUNCTION OF CO LAYER THICKNESS AT THE 2NDANTIFERROMAGNETIC MAXIMUM/
Authors: CHRISTIDES C LOGOTHETIDIS S GIOTI M STERGIOUDIS S STAVROYIANNIS S NIARCHOS D
Citation: C. Christides et al., STRUCTURAL, MAGNETOTRANSPORT, AND OPTICAL-PROPERTIES OF SPUTTERED CO CU MULTILAYERS EXAMINED AS A FUNCTION OF CO LAYER THICKNESS AT THE 2NDANTIFERROMAGNETIC MAXIMUM/, Journal of applied physics, 83(12), 1998, pp. 7757-7768
NEW FORMS OF HYDROGEN-FREE AMORPHOUS-CARBON FILMS
Authors: LOGOTHETIDIS S GIOTI M LIOUTAS C
Citation: S. Logothetidis et al., NEW FORMS OF HYDROGEN-FREE AMORPHOUS-CARBON FILMS, Carbon (New York), 36(5-6), 1998, pp. 539-543
PHASE-TRANSFORMATION OF HYDROGEN FREE AMORPHOUS-CARBON FILMS UNDER ION-BEAM BOMBARDMENT
Authors: LIOUTAS CB VOUROUTZIS N LOGOTHETIDIS S BOULTADAKIS S
Citation: Cb. Lioutas et al., PHASE-TRANSFORMATION OF HYDROGEN FREE AMORPHOUS-CARBON FILMS UNDER ION-BEAM BOMBARDMENT, Carbon (New York), 36(5-6), 1998, pp. 545-548
CARBON NITRIDE THIN-FILMS PREPARED BY REACTIVE RF MAGNETRON SPUTTERING
Authors: LOGOTHETIDIS S LEFAKIS H GIOTI M
Citation: S. Logothetidis et al., CARBON NITRIDE THIN-FILMS PREPARED BY REACTIVE RF MAGNETRON SPUTTERING, Carbon (New York), 36(5-6), 1998, pp. 757-760
STRESS-RELAXATION AND STABILITY IN THICK AMORPHOUS-CARBON FILMS DEPOSITED IN LAYER STRUCTURE
Authors: GIOTI M LOGOTHETIDIS S CHARITIDIS C
Citation: M. Gioti et al., STRESS-RELAXATION AND STABILITY IN THICK AMORPHOUS-CARBON FILMS DEPOSITED IN LAYER STRUCTURE, Applied physics letters, 73(2), 1998, pp. 184-186
AMORPHOUS-CARBON FILMS RICH IN DIAMOND DEPOSITED BY MAGNETRON SPUTTERING
Authors: LOGOTHETIDIS S GIOTI M
Citation: S. Logothetidis et M. Gioti, AMORPHOUS-CARBON FILMS RICH IN DIAMOND DEPOSITED BY MAGNETRON SPUTTERING, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 119-123
IN-SITU AND REAL-TIME ROOM-TEMPERATURE OXIDATION STUDIES OF FCC TIN THIN-FILMS
Authors: LOGOTHETIDIS S BARBORICA A
Citation: S. Logothetidis et A. Barborica, IN-SITU AND REAL-TIME ROOM-TEMPERATURE OXIDATION STUDIES OF FCC TIN THIN-FILMS, Microelectronic engineering, 33(1-4), 1997, pp. 309-316
INFLUENCE OF CONVENTIONAL FURNACE AND RAPID THERMAL ANNEALING ON THE QUALITY OF POLYCRYSTALLINE BETA-FESI2 THIN-FILMS GROWN FROM VAPOR-DEPOSITED FE SI MULTILAYERS/
Authors: TASSIS DH DIMITRIADIS CA BOULTADAKIS S ARVANITIDIS J VES S KOKKOU S LOGOTHETIDIS S VALASSIADES O POULOPOULOS P FLEVARIS NK
Citation: Dh. Tassis et al., INFLUENCE OF CONVENTIONAL FURNACE AND RAPID THERMAL ANNEALING ON THE QUALITY OF POLYCRYSTALLINE BETA-FESI2 THIN-FILMS GROWN FROM VAPOR-DEPOSITED FE SI MULTILAYERS/, Thin solid films, 310(1-2), 1997, pp. 115-122
PROPERTIES AND DENSITY-OF-STATES OF THE INTERFACE BETWEEN SILICON ANDCARBON-FILMS RICH IN SP(3) BONDS
Authors: LOGOTHETIDIS S EVANGELOU E KONOFAOS N
Citation: S. Logothetidis et al., PROPERTIES AND DENSITY-OF-STATES OF THE INTERFACE BETWEEN SILICON ANDCARBON-FILMS RICH IN SP(3) BONDS, Journal of applied physics, 82(10), 1997, pp. 5017-5020
STUDIES OF DENSITY AND SURFACE-ROUGHNESS OF ULTRATHIN AMORPHOUS-CARBON FILMS WITH REGARDS TO THICKNESS WITH X-RAY REFLECTOMETRY AND SPECTROSCOPIC ELLIPSOMETRY
Authors: LOGOTHETIDIS S STERGIOUDIS G
Citation: S. Logothetidis et G. Stergioudis, STUDIES OF DENSITY AND SURFACE-ROUGHNESS OF ULTRATHIN AMORPHOUS-CARBON FILMS WITH REGARDS TO THICKNESS WITH X-RAY REFLECTOMETRY AND SPECTROSCOPIC ELLIPSOMETRY, Applied physics letters, 71(17), 1997, pp. 2463-2465
OPTIMIZATION OF TIN THIN-FILM GROWTH WITH IN-SITU MONITORING - THE EFFECT OF BIAS VOLTAGE AND NITROGEN FLOW-RATE
Authors: LOGOTHETIDIS S ALEXANDROU I KOKKOU S
Citation: S. Logothetidis et al., OPTIMIZATION OF TIN THIN-FILM GROWTH WITH IN-SITU MONITORING - THE EFFECT OF BIAS VOLTAGE AND NITROGEN FLOW-RATE, Surface & coatings technology, 80(1-2), 1996, pp. 66-71
IN-SITU SPECTROSCOPIC ELLIPSOMETRY FOR MONITORING THE TI-SI MULTILAYERS DURING GROWTH AND ANNEALING
Authors: LOGOTHETIDIS S ALEXANDROU I VOUROUTZIS N
Citation: S. Logothetidis et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY FOR MONITORING THE TI-SI MULTILAYERS DURING GROWTH AND ANNEALING, Thin solid films, 275(1-2), 1996, pp. 44-47
DIELECTRIC FUNCTION AND REFLECTIVITY OF 3C-SILICON CARBIDE AND THE COMPONENT PERPENDICULAR TO THE C-AXIS OF 6H-SILICON CARBIDE IN THE ENERGY REGION 1.5-9.5 EV
Authors: LOGOTHETIDIS S PETALAS J
Citation: S. Logothetidis et J. Petalas, DIELECTRIC FUNCTION AND REFLECTIVITY OF 3C-SILICON CARBIDE AND THE COMPONENT PERPENDICULAR TO THE C-AXIS OF 6H-SILICON CARBIDE IN THE ENERGY REGION 1.5-9.5 EV, Journal of applied physics, 80(3), 1996, pp. 1768-1772
THE OPTICAL-PROPERTIES OF A-C-H FILMS BETWEEN 1.5 AND 10 EV AND THE EFFECT OF THERMAL ANNEALING ON THE FILM CHARACTER
Authors: LOGOTHETIDIS S PETALAS J VES S
Citation: S. Logothetidis et al., THE OPTICAL-PROPERTIES OF A-C-H FILMS BETWEEN 1.5 AND 10 EV AND THE EFFECT OF THERMAL ANNEALING ON THE FILM CHARACTER, Journal of applied physics, 79(2), 1996, pp. 1040-1050
HYDROGEN-FREE AMORPHOUS-CARBON FILMS APPROACHING DIAMOND PREPARED BY MAGNETRON SPUTTERING
Authors: LOGOTHETIDIS S
Citation: S. Logothetidis, HYDROGEN-FREE AMORPHOUS-CARBON FILMS APPROACHING DIAMOND PREPARED BY MAGNETRON SPUTTERING, Applied physics letters, 69(2), 1996, pp. 158-160
THE OPTICAL-PROPERTIES AND ELECTRONIC-TRANSITIONS OF CUBIC AND HEXAGONAL GAN FILMS BETWEEN 1.5-EV AND 10-EV
Authors: LOGOTHETIDIS S PETALAS J CARDONA M MOUSTAKAS TD
Citation: S. Logothetidis et al., THE OPTICAL-PROPERTIES AND ELECTRONIC-TRANSITIONS OF CUBIC AND HEXAGONAL GAN FILMS BETWEEN 1.5-EV AND 10-EV, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 65-69
EFFECT OF SUBSTRATE BIAS ON SPUTTER-DEPOSITED TICX, TINY AND TICXNY THIN-FILMS
Authors: ADJAOTTOR AA MELETIS EI LOGOTHETIDIS S ALEXANDROU I KOKKOU S
Citation: Aa. Adjaottor et al., EFFECT OF SUBSTRATE BIAS ON SPUTTER-DEPOSITED TICX, TINY AND TICXNY THIN-FILMS, Surface & coatings technology, 76(1-3), 1995, pp. 142-148
Risultati: 1-25 | 26-45