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Results:
1-22
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Results: 22
Authors:
WEN HJ
LUDEKE R
SCHENK A
Citation: Hj. Wen et al., CURRENT OSCILLATIONS IN THIN METAL-OXIDE-SEMICONDUCTOR STRUCTURES OBSERVED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2296-2301
Authors:
WEN HJ
LUDEKE R
Citation: Hj. Wen et R. Ludeke, LOCALIZED DEGRADATION STUDIES OF ULTRATHIN GATE OXIDES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1735-1740
Authors:
WEN HJ
LUDEKE R
NEWNS DM
LO SH
CARTIER E
Citation: Hj. Wen et al., ATOMIC-SCALE STUDIES OF ELECTRON-TRANSPORT THROUGH MOS STRUCTURES, Applied surface science, 123, 1998, pp. 418-428
Authors:
WEN HJ
LUDEKE R
Citation: Hj. Wen et R. Ludeke, INVESTIGATION OF EXISTING DEFECTS AND DEFECT GENERATION IN DEVICE-GRADE SIO2 BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1080-1088
Authors:
WEN HJ
LUDEKE R
NEWNS DM
LO SH
Citation: Hj. Wen et al., IMAGE FORCE EFFECTS AND THE DIELECTRIC RESPONSE OF SIO2 IN ELECTRON-TRANSPORT ACROSS METAL-OXIDE-SEMICONDUCTOR STRUCTURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 784-789
Authors:
LUDEKE R
WEN HJ
Citation: R. Ludeke et Hj. Wen, GATE OXIDE CHARACTERIZATION WITH BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Microelectronic engineering, 36(1-4), 1997, pp. 255-262
Authors:
LUDEKE R
WEN HJ
Citation: R. Ludeke et Hj. Wen, LOCALIZED ELECTRON TRAPPING AND TRAP DISTRIBUTIONS IN SIO2 GATE OXIDES, Applied physics letters, 71(21), 1997, pp. 3123-3125
Authors:
LUDEKE R
WEN HJ
CARTIER E
Citation: R. Ludeke et al., STRESSING AND HIGH-FIELD TRANSPORT STUDIES ON DEVICE-GRADE SIO2 BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2855-2863
Authors:
KAHN A
LUDEKE R
Citation: A. Kahn et R. Ludeke, ICFSI-5 - PROCEEDINGS OF THE 5TH INTERNATIONAL-CONFERENCE ON THE FORMATION OF SEMICONDUCTOR INTERFACES - PRINCETON-UNIVERSITY, PRINCETON, NJ, USA, JUNE 26-30, 1995 - PREFACE, Applied surface science, 104, 1996, pp. 7-7
Authors:
LUDEKE R
BAUER A
CARTIER E
Citation: R. Ludeke et al., HOT-ELECTRON TRANSPORT THROUGH METAL-OXIDE-SEMICONDUCTOR STRUCTURES STUDIED BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1830-1840
Authors:
LUDEKE R
BAUER A
Citation: R. Ludeke et A. Bauer, ELECTRICAL-TRANSPORT PROPERTIES OF HOT-ELECTRONS AT METAL, INSULATOR,AND SEMICONDUCTOR INTERFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 614-622
Authors:
MCLEAN AB
SWANSTON DM
MCILROY DN
HESKETT D
LUDEKE R
MUNEKATA H
Citation: Ab. Mclean et al., INAS(110)-P(1X1)-SB(1 ML) - ELECTRONIC-STRUCTURE AND SURFACE BONDING, Physical review. B, Condensed matter, 51(20), 1995, pp. 14271-14277
Authors:
LUDEKE R
BAUER A
CARTIER E
Citation: R. Ludeke et al., HOT-ELECTRON TRANSPORT IN SIO2 PROBED WITH A SCANNING TUNNEL MICROSCOPE, Applied physics letters, 66(6), 1995, pp. 730-732
Authors:
BAUER A
LUDEKE R
Citation: A. Bauer et R. Ludeke, DYNAMICAL TRANSMISSION EFFECTS AND IMPACT IONIZATION IN HOT-ELECTRON TRANSPORT ACROSS NISI2 SI(111)7X7 INTERFACES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2667-2674
Authors:
LUDEKE R
BAUER A
Citation: R. Ludeke et A. Bauer, HOT-ELECTRON SCATTERING EFFECTS IN METAL-SEMICONDUCTOR STRUCTURES ANDTHEIR ROLE IN INTERFACE TRANSPORT, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1910-1914
Authors:
LUDEKE R
BAUER A
Citation: R. Ludeke et A. Bauer, HOT-ELECTRON TRANSPORT ACROSS METAL-SEMICONDUCTOR INTERFACES PROBED BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY, Physica scripta. T, 55, 1994, pp. 90-95
Authors:
SWANSTON DM
MCLEAN AB
MCILROY DN
HESKETT D
LUDEKE R
MUNEKATA H
PRIETSCH M
DINARDO NJ
Citation: Dm. Swanston et al., SURFACE LOCALIZED STATES ON INAS(110), Surface science, 312(3), 1994, pp. 361-368
Authors:
BAUER A
LUDEKE R
Citation: A. Bauer et R. Ludeke, DIRECT DETERMINATION OF IMPACT IONIZATION QUANTUM YIELD IN SI BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Physical review letters, 72(6), 1994, pp. 928-931
Authors:
MCILROY DN
HESKETT D
MCLEAN AB
LUDEKE R
MUNEKATA H
DINARDO NJ
Citation: Dn. Mcilroy et al., POLARIZATION STUDY OF THE P(1X1)-PHASES AND P(1X2)-PHASES OF BI GASB(110) USING LINEARLY POLARIZED SYNCHROTRON-RADIATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1486-1491
Authors:
MCILROY DN
HESKETT D
MCLEAN AB
LUDEKE R
MUNEKATA H
DINARDO NJ
Citation: Dn. Mcilroy et al., ELECTRONIC BAND-STRUCTURE OF THE 2-DIMENSIONAL SURFACE-STATE BANDS OFTHE (1X1) AND (1X2) PHASES OF BI GASB(110)/, Physical review. B, Condensed matter, 48(16), 1993, pp. 11897-11904
Authors:
LUDEKE R
BAUER A
Citation: R. Ludeke et A. Bauer, HOT-ELECTRON SCATTERING PROCESSES IN METAL-FILMS AND AT METAL-SEMICONDUCTOR INTERFACES, Physical review letters, 71(11), 1993, pp. 1760-1763
Authors:
SWANSTON DM
MCLEAN AB
MCILROY DN
HESKETT D
LUDEKE R
MUNEKATA H
PRIETSCH M
DINARDO NJ
Citation: Dm. Swanston et al., THE ELECTRONIC-STRUCTURE OF MOLECULAR-BEAM EPITAXY GROWN INAS (110), Canadian journal of physics, 70(10-11), 1992, pp. 1099-1103
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