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Results: 1-10 |
Results: 10
EFFECT OF SELENIUM ON THE GALVANOMAGNETIC PROPERTIES OF THE DILUTED MAGNETIC SEMICONDUCTOR HG1-XMNXTE1-YSEY
Authors: KULBACHINSKII VA CHURILOV IA MARYANCHUK PD LUNIN RA
Citation: Va. Kulbachinskii et al., EFFECT OF SELENIUM ON THE GALVANOMAGNETIC PROPERTIES OF THE DILUTED MAGNETIC SEMICONDUCTOR HG1-XMNXTE1-YSEY, Semiconductors, 32(1), 1998, pp. 49-51
LOW-TEMPERATURE TRANSPORT-PROPERTIES OF INAS GAAS STRUCTURES WITH QUANTUM DOTS/
Authors: KULBACHINSKII VA KYTIN VG LUNIN RA MALKINA IG ZVONKOV BN SAFYANOV YN
Citation: Va. Kulbachinskii et al., LOW-TEMPERATURE TRANSPORT-PROPERTIES OF INAS GAAS STRUCTURES WITH QUANTUM DOTS/, Microelectronic engineering, 43-4, 1998, pp. 107-111
CONDUCTING WIRES EMBEDDED IN AN I-GAAS MATRIX FOR ELECTRONIC APPLICATIONS
Authors: KULBACHINSKII VA LUNIN RA KYTIN VG BUGAEV AS SENICHKIN AP DEMIN AV
Citation: Va. Kulbachinskii et al., CONDUCTING WIRES EMBEDDED IN AN I-GAAS MATRIX FOR ELECTRONIC APPLICATIONS, Microelectronic engineering, 43-4, 1998, pp. 319-324
GALVANOMAGNETIC PROPERTIES OF HG1-XMNXTE1-YSEY SEMIMAGNETIC SEMICONDUCTORS
Authors: KULBACHINSKII VA CHURILOV IA MARYANCHUK PD LUNIN RA
Citation: Va. Kulbachinskii et al., GALVANOMAGNETIC PROPERTIES OF HG1-XMNXTE1-YSEY SEMIMAGNETIC SEMICONDUCTORS, Journal of experimental and theoretical physics, 85(5), 1997, pp. 989-993
QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY AND DECREASE OF ELECTRON-CONCENTRATION BY HIGH ELECTRIC-FIELDS IN GAAS DELTA-DOPED BY SN ON VICINAL SUBSTRATE STRUCTURES
Authors: KULBACHINSKII VA LUNIN RA BOGDANOV EV KYTIN VG SENICHKIN AP
Citation: Va. Kulbachinskii et al., QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY AND DECREASE OF ELECTRON-CONCENTRATION BY HIGH ELECTRIC-FIELDS IN GAAS DELTA-DOPED BY SN ON VICINAL SUBSTRATE STRUCTURES, Physica. B, Condensed matter, 229(3-4), 1997, pp. 262-267
ELECTRON MIGRATIONS IN DIMENSIONAL QUANTI ZATION SUBZONES IN COMBINEDALLOYED GAAS GAALAS HETEROSTRUCTURES WITH HIGH-CONCENTRATION OF 2D-ELECTRONS/
Authors: KULBACHINSKII VA LUNIN RA KYTIN VG BUGAEV AS SENICHKIN AP
Citation: Va. Kulbachinskii et al., ELECTRON MIGRATIONS IN DIMENSIONAL QUANTI ZATION SUBZONES IN COMBINEDALLOYED GAAS GAALAS HETEROSTRUCTURES WITH HIGH-CONCENTRATION OF 2D-ELECTRONS/, Zhurnal eksperimental'noj i teoreticheskoj fiziki, 110(4), 1996, pp. 1517-1532
CHARACTERISTIC FEATURES OF TRANSPORT PHENOMENA IN ALTERNATIVELY DOPEDGAAS GA1-XALXAS HETEROSTRUCTURES/
Authors: BRANDT NB KULBACHINSKII VA KYTIN VG LUNIN RA KADUSHKIN VI SHANGINA EL DEVISSER A
Citation: Nb. Brandt et al., CHARACTERISTIC FEATURES OF TRANSPORT PHENOMENA IN ALTERNATIVELY DOPEDGAAS GA1-XALXAS HETEROSTRUCTURES/, Semiconductors, 30(4), 1996, pp. 365-367
QUENCHING OF PHOTOCONDUCTIVITY BY A STRONG ELECTRIC-FIELD IN TIN DELTA-DOPED GAAS STRUCTURES
Authors: KULBACHINSKII VA LUNIN RA BOGDANOV EV KYTIN VG SENICHKIN AP KADUSHKIN VI
Citation: Va. Kulbachinskii et al., QUENCHING OF PHOTOCONDUCTIVITY BY A STRONG ELECTRIC-FIELD IN TIN DELTA-DOPED GAAS STRUCTURES, JETP letters, 63(5), 1996, pp. 336-341
LOW-TEMPERATURE SUBBAND 2D ELECTRON MOBILITIES IN HEAVY DELTA-DOPED AND MODULATION-DOPED GAAS GAALAS HETEROSTRUCTURES/
Authors: KULBACHINSKII VA LUNIN RA KYTIN VG BUGAEV AS SENICHKIN AP DEVISSER A
Citation: Va. Kulbachinskii et al., LOW-TEMPERATURE SUBBAND 2D ELECTRON MOBILITIES IN HEAVY DELTA-DOPED AND MODULATION-DOPED GAAS GAALAS HETEROSTRUCTURES/, Czechoslovak journal of Physics, 46, 1996, pp. 2457-2458
LOW-TEMPERATURE NEGATIVE MAGNETORESISTANCE IN THE DELTA-DOPED BY SN AND SI ON VICINAL AND SINGULAR SUBSTRATES GAAS STRUCTURES
Authors: KYTIN VG KULBACHINSKII VA LUNIN RA BUGAEV AS SENICHKIN AP
Citation: Vg. Kytin et al., LOW-TEMPERATURE NEGATIVE MAGNETORESISTANCE IN THE DELTA-DOPED BY SN AND SI ON VICINAL AND SINGULAR SUBSTRATES GAAS STRUCTURES, Czechoslovak journal of Physics, 46, 1996, pp. 2513-2514
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