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Results: 1-15 |
Results: 15
Crystallization kinetics in amorphous (Zr0.62Al0.38)O-1.8 thin films
Authors: van Dover, RB Lang, DV Green, ML Manchanda, L
Citation: Rb. Van Dover et al., Crystallization kinetics in amorphous (Zr0.62Al0.38)O-1.8 thin films, J VAC SCI A, 19(6), 2001, pp. 2779-2784
Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures
Authors: Hsu, JWP Manfra, MJ Lang, DV Baldwin, KW Pfeiffer, LN Molnar, RJ
Citation: Jwp. Hsu et al., Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures, J ELEC MAT, 30(3), 2001, pp. 110-114
Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy
Authors: Hsu, JWP Lang, DV Richter, S Kleiman, RN Sergent, AM Look, DC Molnar, RJ
Citation: Jwp. Hsu et al., Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy, J ELEC MAT, 30(3), 2001, pp. 115-122
Spatial variation of electrical properties in lateral epitaxially overgrown GaN
Authors: Hsu, JWP Matthews, MJ Abusch-Magder, D Kleiman, RN Lang, DV Richter, S Gu, SL Kuech, TF
Citation: Jwp. Hsu et al., Spatial variation of electrical properties in lateral epitaxially overgrown GaN, APPL PHYS L, 79(6), 2001, pp. 761-763
Coulomb glass origin of defect-induced dielectric loss in thin-film oxides
Authors: Fleming, RM Varma, CM Lang, DV Jones, CDW Steigerwald, ML Kowach, GR
Citation: Rm. Fleming et al., Coulomb glass origin of defect-induced dielectric loss in thin-film oxides, APPL PHYS L, 78(25), 2001, pp. 4016-4018
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottkydiodes
Authors: Hsu, JWP Manfra, MJ Lang, DV Richter, S Chu, SNG Sergent, AM Kleiman, RN Pfeiffer, LN Molnar, RJ
Citation: Jwp. Hsu et al., Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottkydiodes, APPL PHYS L, 78(12), 2001, pp. 1685-1687
The lasers behind the communications revolution
Authors: Brinkman, WF Koch, TL Lang, DV Wilt, DP
Citation: Wf. Brinkman et al., The lasers behind the communications revolution, BELL LABS T, 5(1), 2000, pp. 150-167
Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures
Authors: Li, LK Turk, B Wang, WI Syed, S Simonian, D Stormer, HL Lang, DV
Citation: Lk. Li et al., Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures, J VAC SCI B, 18(3), 2000, pp. 1472-1475
Defect dominated charge transport in amorphous Ta2O5 thin films
Authors: Fleming, RM Lang, DV Jones, CDW Steigerwald, ML Murphy, DW Alers, GB Wong, YH van Dover, RB Kwo, JR Sergent, AM
Citation: Rm. Fleming et al., Defect dominated charge transport in amorphous Ta2O5 thin films, J APPL PHYS, 88(2), 2000, pp. 850-862
Nature of the highly conducting interfacial layer in GaN films
Authors: Hsu, JWP Lang, DV Richter, S Kleiman, RN Sergent, AM Molnar, RJ
Citation: Jwp. Hsu et al., Nature of the highly conducting interfacial layer in GaN films, APPL PHYS L, 77(18), 2000, pp. 2873-2875
High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
Authors: Manfra, MJ Pfeiffer, LN West, KW Stormer, HL Baldwin, KW Hsu, JWP Lang, DV Molnar, RJ
Citation: Mj. Manfra et al., High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy, APPL PHYS L, 77(18), 2000, pp. 2888-2890
Physics and the communications industry
Authors: Brinkman, WF Lang, DV
Citation: Wf. Brinkman et Dv. Lang, Physics and the communications industry, REV M PHYS, 71, 1999, pp. S480-S488
Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors
Authors: Levine, BF Pinzone, CJ Hui, S King, CA Leibenguth, RE Zolnowski, DR Lang, DV Krautter, HW Geva, M
Citation: Bf. Levine et al., Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors, APPL PHYS L, 75(14), 1999, pp. 2141-2143
Simulation and characterization of the selective area growth process
Authors: Alam, MA People, R Isaacs, E Kim, CY Evans-Lutterodt, K Siegrist, T Pernell, TL Vandenberg, J Sputz, SK Chu, SNG Lang, DV Smith, L Hybertsen, MS
Citation: Ma. Alam et al., Simulation and characterization of the selective area growth process, APPL PHYS L, 74(18), 1999, pp. 2617-2619
Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications
Authors: Kopf, RF Hamm, RA Malik, RJ Ryan, RW Burm, J Tate, A Chen, YK Georgiou, G Lang, DV Geva, M Ren, F
Citation: Rf. Kopf et al., Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications, SOL ST ELEC, 42(12), 1998, pp. 2239-2250
Risultati: 1-15 |