ACNP - Italian Periodicals Catalogue

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Results: 1-10 |

Results: 10

InGaAs nanodomains formed in situ on the surface of (Al,Ga)As

Authors: Krestnikov, IL Cherkashin, NA Sizov, DS Bedarev, DA Kochnev, IV Lantratov, VM Ledentsov, NN

Citation: Il. Krestnikov et al., InGaAs nanodomains formed in situ on the surface of (Al,Ga)As, TECH PHYS L, 27(3), 2001, pp. 233-235

Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers

Authors: Livshits, DA Egorov, AY Kochnev, IV Kapitonov, VA Lantratov, VM Ledentsov, NN Nalyot, TA Tarasov, IS

Citation: Da. Livshits et al., Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers, SEMICONDUCT, 35(3), 2001, pp. 365-369

Study of electron capture by quantum dots using deep-level transient spectroscopy

Authors: Sobolev, MM Kochnev, IV Lantratov, VM Ledentsov, NN

Citation: Mm. Sobolev et al., Study of electron capture by quantum dots using deep-level transient spectroscopy, SEMICONDUCT, 35(10), 2001, pp. 1175-1181

Radiation resistant AlGaAs/GaAs concentrator solar cells with internal Bragg reflector

Authors: Shvarts, MZ Chosta, OI Kochnev, IV Lantratov, VM Andreev, VM

Citation: Mz. Shvarts et al., Radiation resistant AlGaAs/GaAs concentrator solar cells with internal Bragg reflector, SOL EN MAT, 68(1), 2001, pp. 105-122

Optical anisotropy of the (100) surfaces in AlxGa1-xAs ternary compounds

Authors: Berkovits, VL Gordeeva, AB Lantratov, VM L'vova, TV

Citation: Vl. Berkovits et al., Optical anisotropy of the (100) surfaces in AlxGa1-xAs ternary compounds, PHYS SOL ST, 42(5), 2000, pp. 981-986

Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands

Authors: Sobolev, MM Kochnev, IV Lantratov, VM Bert, NA Cherkashin, NA Ledentsov, NN Bedarev, DA

Citation: Mm. Sobolev et al., Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands, SEMICONDUCT, 34(2), 2000, pp. 195-204

1.3 mu m luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition

Authors: Ledentsov, NN Maximov, MV Bimberg, D Maka, T Torres, CMS Kochnev, IV Krestnikov, IL Lantratov, VM Cherkashin, NA Musikhin, YM Alferov, ZI

Citation: Nn. Ledentsov et al., 1.3 mu m luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition, SEMIC SCI T, 15(6), 2000, pp. 604-607

Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes

Authors: Livshits, DA Kochnev, IV Lantratov, VM Ledentsov, NN Nalyot, TA Tarasov, IS Alferov, ZI

Citation: Da. Livshits et al., Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes, ELECTR LETT, 36(22), 2000, pp. 1848-1849

A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes

Authors: Goldberg, YA Konstantinov, OV Lantratov, VM Obolensky, OI Petelina, TV Posse, EA Shvarts, MZ

Citation: Ya. Goldberg et al., A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes, SEMICONDUCT, 33(7), 1999, pp. 804-806

Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots

Authors: Sobolev, MM Kochnev, IV Lantratov, VM Cherkashin, NA Emtsev, VV

Citation: Mm. Sobolev et al., Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots, PHYSICA B, 274, 1999, pp. 959-962

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