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Results: 1-10 |
Results: 10
Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs
Authors: Xia, R Xu, H Harrison, I Beaument, B Andrianov, A Dods, SRA Morgan, JM Larkins, EC
Citation: R. Xia et al., Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs, J CRYST GR, 230(3-4), 2001, pp. 467-472
Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
Authors: Bell, A Harrison, I Korakakis, D Larkins, EC Hayes, JM Kuball, M Grandjean, N Massies, J
Citation: A. Bell et al., Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN, J APPL PHYS, 89(2), 2001, pp. 1070-1074
Improved refractive index formulas for the AlxGa1-xN and InyGa1-yN alloys
Authors: Laws, GM Larkins, EC Harrison, I Molloy, C Somerford, D
Citation: Gm. Laws et al., Improved refractive index formulas for the AlxGa1-xN and InyGa1-yN alloys, J APPL PHYS, 89(2), 2001, pp. 1108-1115
A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy.
Authors: Bell, A Harrison, I Korakakis, D Larkins, EC Hayes, JM Kuball, M
Citation: A. Bell et al., A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy., MRS I J N S, 5, 2000, pp. NIL_655-NIL_660
Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes
Authors: Andrianov, AV Dods, SRA Morgan, J Orton, JW Benson, TM Harrison, I Larkins, EC Daiminger, FX Vassilakis, E Hirtz, JP
Citation: Av. Andrianov et al., Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes, J APPL PHYS, 87(7), 2000, pp. 3227-3233
Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance-voltage technique
Authors: Arias, J Esquivias, I Larkins, EC Burkner, S Weisser, S Rosenzweig, J
Citation: J. Arias et al., Determination of the band offset and the characteristic interdiffusion length in quantum-well lasers using a capacitance-voltage technique, APPL PHYS L, 77(6), 2000, pp. 776-778
Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998)
Authors: Katsavets, NI Laws, GM Harrison, I Larkins, EC Benson, TM Cheng, TS Foxon, CT
Citation: Ni. Katsavets et al., Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998), SEMICONDUCT, 33(2), 1999, pp. 222-222
Carrier capture and escape processes in In0.25Ga0.75As-GaAs quantum-well lasers
Authors: Romero, B Esquivias, I Weisser, S Larkins, EC Rosenzweig, J
Citation: B. Romero et al., Carrier capture and escape processes in In0.25Ga0.75As-GaAs quantum-well lasers, IEEE PHOTON, 11(7), 1999, pp. 779-781
Ga-metal inclusions in GaN grown on sapphire
Authors: Blant, AV Novikov, SV Cheng, TS Flannery, LB Harrison, I Campion, RP Larkins, EC Kribes, Y Foxon, CT
Citation: Av. Blant et al., Ga-metal inclusions in GaN grown on sapphire, J CRYST GR, 203(3), 1999, pp. 349-354
Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998)
Authors: Katsavets, NI Laws, GM Harrison, I Larkins, EC Benson, TM Cheng, TS Foxon, CT
Citation: Ni. Katsavets et al., Study of GaN thin layers subjected to high-temperature rapid thermal annealing (vol 32, pg 1048, 1998), SEMICONDUCT, 32(11), 1998, pp. 1256-1256
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