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Results: 1-25/38
Authors:
Gaiduk, PI
Hansen, JL
Larsen, AN
Citation: Pi. Gaiduk et al., Ion-beam-assisted MBE growth of semi-spherical SiGe/Si nano-structures, APPL PHYS A, 73(6), 2001, pp. 761-763
Authors:
Leveque, P
Christensen, JS
Kuznetsov, AY
Svensson, BG
Larsen, AN
Citation: P. Leveque et al., Influence of boron concentration on the enhanced diffusion observed after irradiation of boron delta-doped silicon at 570 degrees C, NUCL INST B, 178, 2001, pp. 337-341
Authors:
Ridgway, MC
Glover, CJ
Desnica-Frankovic, ID
Furic, K
Yu, KM
Foran, GJ
Clerc, C
Hansen, JL
Larsen, AN
Citation: Mc. Ridgway et al., Implantation-induced disorder in amorphous Ge: Production and relaxation, NUCL INST B, 175, 2001, pp. 21-25
Authors:
Goscinski, K
Dobaczewski, L
Nielsen, KB
Larsen, AN
Peaker, AR
Citation: K. Goscinski et al., High-resolution deep-level transient spectroscopy studies of gold and platinum acceptor states in diluted SiGe alloys - art. no. 235309, PHYS REV B, 6323(23), 2001, pp. 5309
Authors:
Simonsen, AC
Tougaard, S
Hansen, JL
Larsen, AN
Citation: Ac. Simonsen et al., Probing the ex situ morphology of Ge islands on Si(001): AFM and XPS inelastic peak shape analysis, SURF INT AN, 31(4), 2001, pp. 328-337
Authors:
Zangenberg, NR
Hansen, JL
Fage-Pedersen, J
Larsen, AN
Citation: Nr. Zangenberg et al., Ge self-diffusion in epitaxial Si1-xGex layers - art. no. 125901, PHYS REV L, 8712(12), 2001, pp. 5901
Authors:
Leveque, P
Kuznetsov, AY
Christensen, JS
Svensson, BG
Larsen, AN
Citation: P. Leveque et al., Irradiation enhanced diffusion of boron in delta-doped silicon, J APPL PHYS, 89(10), 2001, pp. 5400-5405
Authors:
Gaiduk, PI
Larsen, AN
Hansen, JL
Mudryj, AV
Samtsov, MP
Demenschenok, AN
Citation: Pi. Gaiduk et al., Self-assembly of epitaxially grown Ge/Si quantum dots enhanced by As ion implantation, APPL PHYS L, 79(24), 2001, pp. 4025-4027
Authors:
Gaiduk, PI
Larsen, AN
Hansen, JL
Citation: Pi. Gaiduk et al., Self-organization of GeAs nanodots in relaxed Si0.5Ge0.5 alloys, APPL PHYS L, 79(21), 2001, pp. 3494-3496
Authors:
Ridder, C
Fanciulli, M
Larsen, AN
Weyer, G
Citation: C. Ridder et al., Precipitation of Sn in metastable, pseudomorphic Si0.95Sn0.05 films grown by molecular beam epitaxy, MAT SC S PR, 3(4), 2000, pp. 251-255
Authors:
Kuznetsov, AY
Leveque, P
Hallen, A
Svensson, BG
Larsen, AN
Citation: Ay. Kuznetsov et al., Self-interstitial migration during ion irradiation of boron delta-doped silicon, MAT SC S PR, 3(4), 2000, pp. 279-283
Authors:
Monakhov, EV
Kuznetsov, AY
Svensson, BG
Larsen, AN
Citation: Ev. Monakhov et al., Thermal donor and antimony energy levels in relaxed Si1-xGex layers, PHYS REV B, 61(3), 2000, pp. 1708-1711
Authors:
Larsen, AN
Citation: An. Larsen, Defects in epitaxial SiGe-alloy layers, MAT SCI E B, 71, 2000, pp. 6-13
Authors:
Monakhov, EV
Fyhn, MF
Larsen, AN
Citation: Ev. Monakhov et al., Monte-Carlo simulations of 2-MeV alpha-particle channeling in Sil-xSnx alloy, NUCL INST B, 164, 2000, pp. 103-107
Authors:
Glover, CJ
Ridgway, MC
Byrne, AP
Yu, KM
Foran, GJ
Clerc, C
Hansen, JL
Larsen, AN
Citation: Cj. Glover et al., Micro- and macro-structure of implantation-induced disorder in Ge, NUCL INST B, 161, 2000, pp. 1033-1037
Authors:
Larsen, AN
Goubet, JJ
Mejlholm, P
Christensen, JS
Fanciulli, M
Gunnlaugsson, HP
Weyer, G
Petersen, JW
Resende, A
Kaukonen, M
Jones, R
Oberg, S
Briddon, PR
Svensson, BG
Lindstrom, JL
Dannefaer, S
Citation: An. Larsen et al., Tin-vacancy acceptor levels in electron-irradiated n-type silicon, PHYS REV B, 62(7), 2000, pp. 4535-4544
Authors:
Fage-Pedersen, J
Larsen, AN
Mesli, A
Citation: J. Fage-pedersen et al., Irradiation-induced defects in Ge studied by transient spectroscopies, PHYS REV B, 62(15), 2000, pp. 10116-10125
Authors:
Ridgway, MC
Glover, CJ
Yu, KM
Foran, GJ
Clerc, C
Hansen, JL
Larsen, AN
Citation: Mc. Ridgway et al., Ion-dose-dependent microstructure in amorphous Ge, PHYS REV B, 61(19), 2000, pp. 12586-12589
Authors:
Gaiduk, PI
Larsen, AN
Hansen, JL
Citation: Pi. Gaiduk et al., Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density, THIN SOL FI, 367(1-2), 2000, pp. 120-125
Authors:
Solmi, S
Bersani, M
Sbetti, M
Hansen, JL
Larsen, AN
Citation: S. Solmi et al., Boron-interstitial silicon clusters and their effects on transient enhanced diffusion of boron in silicon, J APPL PHYS, 88(8), 2000, pp. 4547-4552
Authors:
Fage-Pedersen, J
Gaiduk, P
Hansen, JL
Larsen, AN
Citation: J. Fage-pedersen et al., Si self-interstitial injection from Sb complex formation in Si, J APPL PHYS, 88(6), 2000, pp. 3254-3259
Authors:
Fyhn, MF
Hansen, JL
Chevallier, J
Larsen, AN
Citation: Mf. Fyhn et al., Surfactant-mediated growth of Si1-xSnx layers by molecular-beam epitaxy, APPL PHYS A, 68(2), 1999, pp. 259-262
Authors:
Dobaczewski, L
Nielsen, KB
Goscinski, K
Peaker, AR
Larsen, AN
Citation: L. Dobaczewski et al., Site preference next to germanium atom of gold and platinum impurities in SiGe alloy, PHYSICA B, 274, 1999, pp. 620-623
Authors:
Kuznetsov, AY
Radamson, HH
Svensson, BG
Ni, WX
Hansson, GV
Larsen, AN
Citation: Ay. Kuznetsov et al., Comparison of strain relaxation in Si/SiGe/Si heterostructures after annealing in oxidizing and inert atmospheres, PHYS SCR, T79, 1999, pp. 202-205
Authors:
Kuznetsov, AY
Janson, M
Hallen, A
Svensson, BG
Larsen, AN
Citation: Ay. Kuznetsov et al., Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500-850degrees C, NUCL INST B, 148(1-4), 1999, pp. 279-283