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Results: 1-13 |
Results: 13
Opto-mechanical design of tuneable InP-based Fabry-Perot filter for gas analysis
Authors: Bondavalli, P Benyattou, T Garrigues, M Leclercq, JL Jourba, S Pautet, C Hugon, X
Citation: P. Bondavalli et al., Opto-mechanical design of tuneable InP-based Fabry-Perot filter for gas analysis, SENS ACTU-A, 94(3), 2001, pp. 136-141
GaAlAs-based micromachined accelerometer
Authors: Konczewicz, L Lee, HY Sadowski, ML Letartre, X Leclercq, JL Viktorovitch, P Robert, JL
Citation: L. Konczewicz et al., GaAlAs-based micromachined accelerometer, PHYS ST S-B, 223(2), 2001, pp. 593-596
InP-based photonic micro-sensor for near field optical investigations
Authors: Belier, B Castagne, M Falgayrettes, P Bonnafe, J Santoso, A Leclercq, JL
Citation: B. Belier et al., InP-based photonic micro-sensor for near field optical investigations, J VAC SCI B, 18(1), 2000, pp. 90-93
InP-based MOEMS and related topics
Authors: Leclercq, JL Garrigues, M Letartre, X Seassal, C Viktorovitch, P
Citation: Jl. Leclercq et al., InP-based MOEMS and related topics, J MICROM M, 10(2), 2000, pp. 287-292
GaAlAs-based micromachined accelerometer
Authors: Lee, HY Letartre, X Leclercq, JL Viktorovitch, P Konczewicz, L Sadowski, M Robert, JL
Citation: Hy. Lee et al., GaAlAs-based micromachined accelerometer, HIGH PR RES, 19(1-6), 2000, pp. 737-741
Micromachined microwave planar spiral inductors and transformers
Authors: Ribas, RP Lescot, J Leclercq, JL Karam, JM Ndagijimana, F
Citation: Rp. Ribas et al., Micromachined microwave planar spiral inductors and transformers, IEEE MICR T, 48(8), 2000, pp. 1326-1335
Paramorphic growth: A new approach in mismatched heteroepitaxy to prepare fully relaxed materials
Authors: Damlencourt, JF Leclercq, JL Gendry, M Garrigues, M Aberkane, N Hollinger, G
Citation: Jf. Damlencourt et al., Paramorphic growth: A new approach in mismatched heteroepitaxy to prepare fully relaxed materials, JPN J A P 2, 38(9AB), 1999, pp. L996-L999
InP-based micro-opto-electro mechanical systems (MOEMS)
Authors: Leclercq, JL Seassal, C Viktorovitch, P
Citation: Jl. Leclercq et al., InP-based micro-opto-electro mechanical systems (MOEMS), J PHYS IV, 9(P2), 1999, pp. 123-131
Tunable microcavity based on InP-air Bragg mirrors
Authors: Le Dantec, R Benyattou, T Guillot, G Spisser, A Seassal, C Leclercq, JL Viktorovitch, P Rondi, D Blondeau, R
Citation: R. Le Dantec et al., Tunable microcavity based on InP-air Bragg mirrors, IEEE S T QU, 5(1), 1999, pp. 111-114
Tunable microcavity based on InP/air Bragg mirrors
Authors: Le Dantec, R Benyattou, T Guillot, G Spisser, A Leclercq, JL Viktorovitch, P Rondi, D Blondeau, R
Citation: R. Le Dantec et al., Tunable microcavity based on InP/air Bragg mirrors, J MAT S-M E, 10(5-6), 1999, pp. 447-450
Triangular and hexagonal high Q-factor 2-D photonic bandgap cavities on III-V suspended membranes
Authors: Pottier, P Seassal, C Letartre, X Leclercq, JL Viktorovitch, P Cassagne, D Jouanin, C
Citation: P. Pottier et al., Triangular and hexagonal high Q-factor 2-D photonic bandgap cavities on III-V suspended membranes, J LIGHTW T, 17(11), 1999, pp. 2058-2062
2 mu m resonant cavity enhanced InP/InGaAs single quantum well photo-detector
Authors: Jourba, S Besland, MP Gendry, M Garrigues, M Leclercq, JL Rojo-Romeo, P Viktorovich, P Cortial, S Hugon, X Pautet, C
Citation: S. Jourba et al., 2 mu m resonant cavity enhanced InP/InGaAs single quantum well photo-detector, ELECTR LETT, 35(15), 1999, pp. 1272-1274
High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach
Authors: Damlencourt, JF Leclercq, JL Gendry, M Regreny, P Hollinger, G
Citation: Jf. Damlencourt et al., High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach, APPL PHYS L, 75(23), 1999, pp. 3638-3640
Risultati: 1-13 |