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Results: 1-11 |
Results: 11
Ta2O5/Silicon barrier height measured from MOSFETs fabricated with Ta2O5 gate dielectric
Authors: Lai, BC Yu, JC Lee, JYM
Citation: Bc. Lai et al., Ta2O5/Silicon barrier height measured from MOSFETs fabricated with Ta2O5 gate dielectric, IEEE ELEC D, 22(5), 2001, pp. 221-223
The observation of negative transconductance effect caused by real-space-transfer of electrons in metal oxide semiconductor field effect transistors fabricated with Ta2O5 gate dielectric
Authors: Lai, BCM Lee, JYM
Citation: Bcm. Lai et Jym. Lee, The observation of negative transconductance effect caused by real-space-transfer of electrons in metal oxide semiconductor field effect transistors fabricated with Ta2O5 gate dielectric, IEEE ELEC D, 22(3), 2001, pp. 142-144
Thickness dependence of the time dependent dielectric breakdown characteristics of Pb(Zr, Ti)O-3 thin film capacitors for memory device applications
Authors: Kundu, TK Lee, JYM
Citation: Tk. Kundu et Jym. Lee, Thickness dependence of the time dependent dielectric breakdown characteristics of Pb(Zr, Ti)O-3 thin film capacitors for memory device applications, JPN J A P 1, 39(6A), 2000, pp. 3488-3491
Electrical characteristics of metal-ferroelectric (PbZrxTi1-x O-3)-insulator (Ta2O5)-silicon structure for nonvolatile memory applications
Authors: Sze, CY Lee, JYM
Citation: Cy. Sze et Jym. Lee, Electrical characteristics of metal-ferroelectric (PbZrxTi1-x O-3)-insulator (Ta2O5)-silicon structure for nonvolatile memory applications, J VAC SCI B, 18(6), 2000, pp. 2848-2850
The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications
Authors: Lin, YB Lee, JYM
Citation: Yb. Lin et Jym. Lee, The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications, J APPL PHYS, 87(4), 2000, pp. 1841-1843
Thickness-dependent electrical properties of Pb(Zr, Ti)O-3 thin film capacitors for memory device applications
Authors: Kundu, TK Lee, JYM
Citation: Tk. Kundu et Jym. Lee, Thickness-dependent electrical properties of Pb(Zr, Ti)O-3 thin film capacitors for memory device applications, J ELCHEM SO, 147(1), 2000, pp. 326-329
Thymus-derived glucocorticoids set the thresholds for thymocyte selection by inhibiting TCR-mediated thymocyte activation
Authors: Vacchio, MS Lee, JYM Ashwell, JD
Citation: Ms. Vacchio et al., Thymus-derived glucocorticoids set the thresholds for thymocyte selection by inhibiting TCR-mediated thymocyte activation, J IMMUNOL, 163(3), 1999, pp. 1327-1333
A study on the capacitance-voltage characteristics of metal-Ta2O5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications
Authors: Lai, BCM Kung, NH Lee, JYM
Citation: Bcm. Lai et al., A study on the capacitance-voltage characteristics of metal-Ta2O5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications, J APPL PHYS, 85(8), 1999, pp. 4087-4090
A study of interface trap generation by Fowler-Nordheim and substrate-hot-carrier stresses for 4-nm thick gate oxides
Authors: Shiue, JH Lee, JYM Chao, TS
Citation: Jh. Shiue et al., A study of interface trap generation by Fowler-Nordheim and substrate-hot-carrier stresses for 4-nm thick gate oxides, IEEE DEVICE, 46(8), 1999, pp. 1705-1710
Leakage current mechanism of metal-Ta2O5-metal capacitors for memory device applications
Authors: Lai, BCM Lee, JYM
Citation: Bcm. Lai et Jym. Lee, Leakage current mechanism of metal-Ta2O5-metal capacitors for memory device applications, J ELCHEM SO, 146(1), 1999, pp. 266-269
Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications
Authors: Huang, SC Chen, HM Wu, SC Lee, JYM
Citation: Sc. Huang et al., Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications, J APPL PHYS, 84(9), 1998, pp. 5155-5157
Risultati: 1-11 |