Authors:
Auret, FD
Goodman, SA
Hayes, M
Legodi, MJ
van Laarhoven, HA
Look, DC
Citation: Fd. Auret et al., The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO, J PHYS-COND, 13(40), 2001, pp. 8989-8999
Authors:
Goodman, SA
Auret, FD
Myburg, G
Legodi, MJ
Gibart, P
Beaumont, B
Citation: Sa. Goodman et al., Deep levels introduced in n-GaN grown by the ELOG technique by high-energyelectron irradiation, MAT SCI E B, 82(1-3), 2001, pp. 95-97
Authors:
Auret, FD
Goodman, SA
Hayes, M
Legodi, MJ
Hullavarad, SS
Friedland, E
Beaumont, B
Gibart, P
Citation: Fd. Auret et al., Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons, NUCL INST B, 175, 2001, pp. 292-295
Citation: Mj. Legodi et al., Electronic and transformation properties of a metastable defect introducedin epitaxially grown sulfur doped n-GaAs by particle irradiation, MAT SCI E B, 71, 2000, pp. 96-99
Authors:
Legodi, MJ
Auret, FD
Goodman, SA
Malherbe, JB
Citation: Mj. Legodi et al., Schottky barrier modification and electrical characterization of low energy He-ion bombardment induced defects in n- and p-type GaAs, NUCL INST B, 148(1-4), 1999, pp. 441-445
Authors:
Auret, FD
Goodman, SA
Legodi, MJ
Meyer, WE
Citation: Fd. Auret et al., Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation, NUCL INST B, 148(1-4), 1999, pp. 474-477