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Results: 1-9 |
Results: 9
The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO
Authors: Auret, FD Goodman, SA Hayes, M Legodi, MJ van Laarhoven, HA Look, DC
Citation: Fd. Auret et al., The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO, J PHYS-COND, 13(40), 2001, pp. 8989-8999
Deep levels introduced in n-GaN grown by the ELOG technique by high-energyelectron irradiation
Authors: Goodman, SA Auret, FD Myburg, G Legodi, MJ Gibart, P Beaumont, B
Citation: Sa. Goodman et al., Deep levels introduced in n-GaN grown by the ELOG technique by high-energyelectron irradiation, MAT SCI E B, 82(1-3), 2001, pp. 95-97
Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons
Authors: Auret, FD Goodman, SA Hayes, M Legodi, MJ Hullavarad, SS Friedland, E Beaumont, B Gibart, P
Citation: Fd. Auret et al., Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons, NUCL INST B, 175, 2001, pp. 292-295
Electrical characterization of 1.8 MeV proton-bombarded ZnO
Authors: Auret, FD Goodman, SA Hayes, M Legodi, MJ van Laarhoven, HA Look, DC
Citation: Fd. Auret et al., Electrical characterization of 1.8 MeV proton-bombarded ZnO, APPL PHYS L, 79(19), 2001, pp. 3074-3076
Characterization of electron-irradiated n-GaN
Authors: Goodman, SA Auret, FD Legodi, MJ Beaumont, B Gibart, P
Citation: Sa. Goodman et al., Characterization of electron-irradiated n-GaN, APPL PHYS L, 78(24), 2001, pp. 3815-3817
Electronic and transformation properties of a metastable defect introducedin epitaxially grown sulfur doped n-GaAs by particle irradiation
Authors: Legodi, MJ Auret, FD Goodman, SA
Citation: Mj. Legodi et al., Electronic and transformation properties of a metastable defect introducedin epitaxially grown sulfur doped n-GaAs by particle irradiation, MAT SCI E B, 71, 2000, pp. 96-99
Dopant-related metastable defects in particle irradiated n-GaAs
Authors: Legodi, MJ Auret, FD Goodman, SA
Citation: Mj. Legodi et al., Dopant-related metastable defects in particle irradiated n-GaAs, PHYSICA B, 274, 1999, pp. 762-765
Schottky barrier modification and electrical characterization of low energy He-ion bombardment induced defects in n- and p-type GaAs
Authors: Legodi, MJ Auret, FD Goodman, SA Malherbe, JB
Citation: Mj. Legodi et al., Schottky barrier modification and electrical characterization of low energy He-ion bombardment induced defects in n- and p-type GaAs, NUCL INST B, 148(1-4), 1999, pp. 441-445
Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation
Authors: Auret, FD Goodman, SA Legodi, MJ Meyer, WE
Citation: Fd. Auret et al., Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation, NUCL INST B, 148(1-4), 1999, pp. 474-477
Risultati: 1-9 |