Authors:
Lourenco, SA
Dias, IFL
Laureto, E
Duarte, JL
Filho, DOT
Meneses, EA
Leite, JR
Citation: Sa. Lourenco et al., Influence of Al content on temperature dependence of excitonic transitionsin quantum wells, EUR PHY J B, 21(1), 2001, pp. 11-17
Authors:
Rodrigues, SCP
Sipahi, GM
Scolfaro, LMR
Leite, JR
Citation: Scp. Rodrigues et al., Exchange-correlation effects on the hole miniband structure and confinement potential in zinc-blende AlxGa1-xN/GaN superlattices, J PHYS-COND, 13(14), 2001, pp. 3381-3387
Authors:
Choque, NMS
Gusev, GM
Leite, JR
Bykov, AA
Litvin, LV
Moshegov, NT
Toropov, AI
Citation: Nms. Choque et al., Commensurability oscillations in wide parabolic well in the presence of anin-plane magnetic field, PHYSICA B, 298(1-4), 2001, pp. 302-305
Authors:
Sergio, CS
Gusev, GM
Leite, JR
Olshanetskii, EB
Bykov, AA
Moshegov, NT
Bakarov, AK
Toropov, AI
Maude, DK
Estibals, O
Portal, JC
Citation: Cs. Sergio et al., Coexistence of a two- and three-dimensional Landau states in a wide parabolic quantum well - art. no. 115314, PHYS REV B, 6411(11), 2001, pp. 5314
Authors:
Ramos, LE
Teles, LK
Scolfaro, LMR
Castineira, JLP
Rosa, AL
Leite, JR
Citation: Le. Ramos et al., Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds - art. no. 165210, PHYS REV B, 6316(16), 2001, pp. 5210
Authors:
Teles, LK
Furthmuller, J
Scolfaro, LMR
Leite, JR
Bechstedt, F
Citation: Lk. Teles et al., Influence of composition fluctuations and strain on gap bowing in InxGa1-xN - art. no. 085204, PHYS REV B, 6308(8), 2001, pp. 5204
Authors:
Andreatini, R
Blanchard, C
Blanchard, R
Brandao, ML
Carobrez, AP
Griebel, G
Guimaraes, FS
Handley, SL
Jenck, F
Leite, JR
Rodgers, J
Schenberg, LC
Da Cunha, C
Graeff, FG
Citation: R. Andreatini et al., The brain decade in debate: II. Panic or anxiety? From animal models to a neurobiological basis, BRAZ J MED, 34(2), 2001, pp. 145-154
Authors:
de Sales, FV
da Silva, SW
Monte, AFG
Soler, MAG
Cruz, JMR
Da Silva, MJ
Quivy, AA
Leite, JR
Morais, PC
Citation: Fv. De Sales et al., Excitation transfer through quantum dots measured by microluminescence: Dependence on the quantum dot density, PHYS ST S-A, 187(1), 2001, pp. 45-48
Authors:
Fernandez, JRL
Araujo, CM
da Silva, AF
Leite, JR
Sernelius, BE
Tabata, A
Abramof, E
Chitta, VA
Persson, C
Ahuja, R
Pepe, I
As, DJ
Frey, T
Schikora, D
Lischka, K
Citation: Jrl. Fernandez et al., Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems, J CRYST GR, 231(3), 2001, pp. 420-427
Citation: S. Martini et al., Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces, J APPL PHYS, 90(5), 2001, pp. 2280-2289
Authors:
Frey, T
As, DJ
Bartels, M
Pawlis, A
Lischka, K
Tabata, A
Fernandez, JRL
Silva, MTO
Leite, JR
Haug, C
Brenn, R
Citation: T. Frey et al., Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures, J APPL PHYS, 89(5), 2001, pp. 2631-2634
Authors:
Husberg, O
Khartchenko, A
As, DJ
Vogelsang, H
Frey, T
Schikora, D
Lischka, K
Noriega, OC
Tabata, A
Leite, JR
Citation: O. Husberg et al., Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures, APPL PHYS L, 79(9), 2001, pp. 1243-1245
Authors:
Fernandez, JRL
Chitta, VA
Abramof, E
da Silva, AF
Leite, JR
Tabata, A
As, DJ
Frey, T
Schikora, D
Lischka, K
Citation: Jrl. Fernandez et al., Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature, MRS I J N S, 5, 2000, pp. NIL_191-NIL_196
Citation: S. Martini et al., Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates, J VAC SCI B, 18(4), 2000, pp. 1991-1996
Authors:
Sotomayor, NM
Gusev, GM
Leite, JR
Chitta, VA
Citation: Nm. Sotomayor et al., Theoretical analysis of magnetoresistance commensurability oscillations of2D electrons in antidot lattice in the presence of an in-plane magnetic field, MICROEL ENG, 51-2, 2000, pp. 111-117
Authors:
Teles, LK
Furthmuller, J
Scolfaro, LMR
Leite, JR
Bechstedt, F
Citation: Lk. Teles et al., First-principles calculations of the thermodynamic and structural properties of strained InxGa1-xN and AlxGa1-xN alloys, PHYS REV B, 62(4), 2000, pp. 2475-2485