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Results:
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Results: 13
Authors:
Agert, C
Dimroth, F
Schubert, U
Bett, AW
Leu, S
Stolz, W
Citation: C. Agert et al., High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios, SOL EN MAT, 66(1-4), 2001, pp. 637-644
Authors:
Li, XH
Galli, T
Leu, S
Wade, JB
Weinman, EJ
Leung, G
Cheong, A
Louvard, D
Donowitz, M
Citation: Xh. Li et al., Na+-H+ exchanger 3 (NHE3) is present in lipid rafts in the rabbit ileal brush border: a role for rafts in trafficking and rapid stimulation of NHE3, J PHYSL LON, 537(2), 2001, pp. 537-552
Authors:
Hetzler, J
Brunner, A
Wegener, M
Leu, S
Nau, S
Stolz, W
Citation: J. Hetzler et al., 100 fs carrier dynamics in GaAs under 100 nm diameter apertures, PHYS ST S-B, 221(1), 2000, pp. 425-428
Authors:
Wagner, A
Ellmers, C
Hohnsdorf, F
Koch, J
Leu, S
Stolz, W
Hofmann, M
Ruhle, WW
Citation: A. Wagner et al., Emission dynamics and gain of (GaIn)(NAs)/GaAs lasers, PHYS ST S-B, 221(1), 2000, pp. 567-569
Authors:
Hofmann, M
Karaiskaj, D
Ellmers, C
Maxisch, T
Jahnke, F
Kolbe, HJ
Weiser, G
Rettig, R
Leu, S
Stolz, W
Koch, SW
Ruhle, WW
Citation: M. Hofmann et al., Normal-mode linewidths in a semiconductor microcavity with various cavity qualities, PHYS ST S-A, 178(1), 2000, pp. 179-181
Authors:
Wagner, A
Ellmers, C
Hohnsdorf, F
Koch, J
Agert, C
Leu, S
Hofmann, M
Stolz, W
Ruhle, WW
Citation: A. Wagner et al., (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range, APPL PHYS L, 76(3), 2000, pp. 271-272
Authors:
Karaiskaj, D
Maxisch, T
Ellmers, C
Kolbe, HJ
Weiser, G
Rettig, R
Leu, S
Stolz, W
Hofmann, M
Jahnke, F
Koch, SW
Ruhle, WW
Citation: D. Karaiskaj et al., Linewidths in a semiconductor microcavity with variable strength of normal-mode coupling, PHYS REV B, 59(21), 1999, pp. 13525-13527
Authors:
Hohnsdorf, F
Koch, J
Leu, S
Stolz, W
Borchert, B
Druminski, M
Citation: F. Hohnsdorf et al., Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 mu m, ELECTR LETT, 35(7), 1999, pp. 571-572
Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 mu m wavelength regime
Authors:
Ellmers, C
Hohnsdorf, F
Koch, J
Agert, C
Leu, S
Karaiskaj, D
Hofmann, M
Stolz, W
Ruhle, WW
Citation: C. Ellmers et al., Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 mu m wavelength regime, APPL PHYS L, 74(16), 1999, pp. 2271-2273
Authors:
Ellmers, C
Hofmann, MR
Karaiskaj, D
Leu, S
Stolz, W
Ruhle, WW
Hilpert, M
Citation: C. Ellmers et al., Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics, APPL PHYS L, 74(10), 1999, pp. 1367-1369
Authors:
Leu, S
Protzmann, H
Hohnsdorf, F
Stolz, W
Steinkirchner, J
Hufgard, E
Citation: S. Leu et al., Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane, J CRYST GR, 195(1-4), 1998, pp. 91-97
Authors:
Leu, S
Hohnsdorf, F
Stolz, W
Becker, R
Salzmann, A
Greiling, A
Citation: S. Leu et al., C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs, J CRYST GR, 195(1-4), 1998, pp. 98-104
Authors:
Ellmers, C
Leu, S
Rettig, R
Hofmann, M
Ruhle, WW
Stolz, W
Citation: C. Ellmers et al., GaAs-based VCSEL-structures with strain-compensated (GaIn)As/Ga(PAs)-MQWH active regions grown by using TBAs and TBP, J CRYST GR, 195(1-4), 1998, pp. 630-636
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