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Results: 1-16 |
Results: 16

Authors: Ma, ZF Yang, XQ Liao, XZ Sun, X McBreen, J
Citation: Zf. Ma et al., Electrochemical evaluation of composite cathodes base on blends of LiMn2O4and LiNi0.8Co0.2O2, ELECTROCH C, 3(8), 2001, pp. 425-428

Authors: Wan, J Luo, YH Jiang, ZM Jin, G Liu, JL Wang, KL Liao, XZ Zou, J
Citation: J. Wan et al., Ge/Si interdiffusion in the GeSi dots and wetting layers, J APPL PHYS, 90(8), 2001, pp. 4290-4292

Authors: Liao, XZ Zou, J Cockayne, DJH Jiang, ZM Wang, X
Citation: Xz. Liao et al., Extracting composition and alloying information of coherent Ge(Si)/Si(001)islands from [001] on-zone bright-field diffraction contrast images, J APPL PHYS, 90(6), 2001, pp. 2725-2729

Authors: Liao, XZ Zou, J Cockayne, DJH Wan, J Jiang, ZM Jin, G Wang, KL
Citation: Xz. Liao et al., Annealing effects on the microstructure of Ge/Si(001) quantum dots, APPL PHYS L, 79(9), 2001, pp. 1258-1260

Authors: Wan, J Luo, YH Jiang, ZM Jin, G Liu, JL Wang, KL Liao, XZ Zou, J
Citation: J. Wan et al., Effects of interdiffusion on the band alignment of GeSi dots, APPL PHYS L, 79(13), 2001, pp. 1980-1982

Authors: Liao, XZ Zou, J Cockayne, DJH Jiang, ZM Wang, X Leon, R
Citation: Xz. Liao et al., Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands, APPL PHYS L, 77(9), 2000, pp. 1304-1306

Authors: Leon, R Wellman, J Liao, XZ Zou, J Cockayne, DJH
Citation: R. Leon et al., Adatom condensation and quantum dot sizes in InGaAs/GaAs (001), APPL PHYS L, 76(12), 2000, pp. 1558-1560

Authors: Liu, HK Hu, QY Liao, XZ Guo, YC Horvat, J Dou, SX
Citation: Hk. Liu et al., Effect of cryogenic deformation on microstructure and critical current density in Ag/Bi-2223 tapes, IEEE APPL S, 9(2), 1999, pp. 2726-2729

Authors: Wang, XL Liu, HK Liao, XZ Dou, SX
Citation: Xl. Wang et al., Softening of Bi2212 crystals and growth mechanism of Bi2212 and Bi2201 grown at the KCl flux surface, SUPERCOND S, 12(2), 1999, pp. 77-80

Authors: Lobo, C Leon, R Marcinkevicius, S Yang, W Sercel, PC Liao, XZ Zou, J Cockayne, DJH
Citation: C. Lobo et al., Inhibited carrier transfer in ensembles of isolated quantum dots, PHYS REV B, 60(24), 1999, pp. 16647-16651

Authors: Liao, XZ Zou, J Cockayne, DJH Qin, J Jiang, ZM Wang, X Leon, R
Citation: Xz. Liao et al., Strain relaxation by alloying effects in Ge islands grown on Si(001), PHYS REV B, 60(23), 1999, pp. 15605-15608

Authors: Leon, R Marcinkevicius, S Liao, XZ Zou, J Cockayne, DJH Fafard, S
Citation: R. Leon et al., Ensemble interactions in strained semiconductor quantum dots, PHYS REV B, 60(12), 1999, pp. R8517-R8520

Authors: Zou, J Liao, XZ Cockayne, DJH Leon, R
Citation: J. Zou et al., Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate, PHYS REV B, 59(19), 1999, pp. 12279-12282

Authors: Leon, R Lobo, C Liao, XZ Zou, J Cockayne, DJH Fafard, S
Citation: R. Leon et al., Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots, THIN SOL FI, 357(1), 1999, pp. 40-45

Authors: Liao, XZ Zou, J Cockayne, DJH Leon, R Lobo, C
Citation: Xz. Liao et al., Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots(vol 82, pg 5148, 1999), PHYS REV L, 83(6), 1999, pp. 1273-1273

Authors: Liao, XZ Zou, J Cockayne, DJH Leon, R Lobo, C
Citation: Xz. Liao et al., Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots, PHYS REV L, 82(25), 1999, pp. 5148-5151
Risultati: 1-16 |