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Results: 1-13 |
Results: 13
Point defect diffusion and clustering in ion implanted c-Si
Authors: Libertino, S Coffa, S Spinella, C La Magna, A Privitera, V
Citation: S. Libertino et al., Point defect diffusion and clustering in ion implanted c-Si, NUCL INST B, 178, 2001, pp. 25-32
A multi-scale atomistic study of the interstitials agglomeration in crystalline Si
Authors: La Magna, A Coffa, S Libertino, S Brambilla, L Alippi, P Colombo, L
Citation: A. La Magna et al., A multi-scale atomistic study of the interstitials agglomeration in crystalline Si, NUCL INST B, 178, 2001, pp. 154-159
Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si - art. no. 195206
Authors: Libertino, S Coffa, S Benton, JL
Citation: S. Libertino et al., Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si - art. no. 195206, PHYS REV B, 6319(19), 2001, pp. 5206
Design and fabrication of integrated Si-based optoelectronic devices
Authors: Libertino, S Coffa, S Saggio, M
Citation: S. Libertino et al., Design and fabrication of integrated Si-based optoelectronic devices, MAT SC S PR, 3(5-6), 2000, pp. 375-381
Cluster formation and growth in Si ion implanted c-Si
Authors: Libertino, S Coffa, S Spinella, C Benton, JL Arcifa, D
Citation: S. Libertino et al., Cluster formation and growth in Si ion implanted c-Si, MAT SCI E B, 71, 2000, pp. 137-142
Feasibility analysis of laser action in erbium-doped silicon waveguides
Authors: Coffa, S Libertino, S Coppola, G Cutolo, A
Citation: S. Coffa et al., Feasibility analysis of laser action in erbium-doped silicon waveguides, IEEE J Q EL, 36(10), 2000, pp. 1206-1213
Transition from small interstitial clusters to extended {311} defects in ion-implanted Si
Authors: Coffa, S Libertino, S Spinella, C
Citation: S. Coffa et al., Transition from small interstitial clusters to extended {311} defects in ion-implanted Si, APPL PHYS L, 76(3), 2000, pp. 321-323
Formation, evolution and annihilation of interstitial clusters in ion implanted Si
Authors: Libertino, S Coffa, S Benton, JL Halliburton, K Eaglesham, DJ
Citation: S. Libertino et al., Formation, evolution and annihilation of interstitial clusters in ion implanted Si, NUCL INST B, 148(1-4), 1999, pp. 247-251
Migration and interaction properties of ion beam generated point defects in c-Si
Authors: Libertino, S Coffa, S
Citation: S. Libertino et S. Coffa, Migration and interaction properties of ion beam generated point defects in c-Si, NUCL INST B, 147(1-4), 1999, pp. 23-28
The electrical properties of terbium ions in crystalline Si
Authors: Libertino, S Coffa, S Mosca, R Gombia, E
Citation: S. Libertino et al., The electrical properties of terbium ions in crystalline Si, J APPL PHYS, 85(4), 1999, pp. 2093-2099
Impurity and clustering effects on defect evolution in ion-implanted Si
Authors: Libertino, S Benton, JL Coffa, S Eaglesham, DJ
Citation: S. Libertino et al., Impurity and clustering effects on defect evolution in ion-implanted Si, NUOV CIM D, 20(10), 1998, pp. 1529-1548
Electrical signatures and thermal stability of interstitial clusters in ion implanted Si
Authors: Benton, JL Halliburton, K Libertino, S Eaglesham, DJ Coffa, S
Citation: Jl. Benton et al., Electrical signatures and thermal stability of interstitial clusters in ion implanted Si, J APPL PHYS, 84(9), 1998, pp. 4749-4756
Room-temperature diffusivity of self-interstitials and vacancies in ion-implanted Si probed by in situ measurements
Authors: Coffa, S Libertino, S
Citation: S. Coffa et S. Libertino, Room-temperature diffusivity of self-interstitials and vacancies in ion-implanted Si probed by in situ measurements, APPL PHYS L, 73(23), 1998, pp. 3369-3371
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