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Results: 1-25/33
Authors:
Lim, SH
Washburn, J
Liliental-Weber, Z
Shindo, D
Citation: Sh. Lim et al., Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire, J VAC SCI A, 19(5), 2001, pp. 2601-2603
Authors:
Liliental-Weber, Z
Benamara, M
Washburn, J
Domagala, JZ
Bak-Misiuk, J
Piner, EL
Roberts, JC
Bedair, SM
Citation: Z. Liliental-weber et al., Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies, J ELEC MAT, 30(4), 2001, pp. 439-444
Authors:
Bourret-Courchesne, ED
Yu, KM
Benamara, M
Liliental-Weber, Z
Washburn, J
Citation: Ed. Bourret-courchesne et al., Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer, J ELEC MAT, 30(11), 2001, pp. 1417-1420
Authors:
Look, DC
Stutz, CE
Molnar, RJ
Saarinen, K
Liliental-Weber, Z
Citation: Dc. Look et al., Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN, SOL ST COMM, 117(10), 2001, pp. 571-575
Authors:
Liliental-Weber, Z
Cherns, D
Citation: Z. Liliental-weber et D. Cherns, Microstructure of laterally overgrown GaN layers, J APPL PHYS, 89(12), 2001, pp. 7833-7840
Authors:
Qiao, D
Jia, L
Yu, LS
Asbeck, PM
Lau, SS
Lim, SH
Liliental-Weber, Z
Haynes, TE
Barner, JB
Citation: D. Qiao et al., Ta-based interface ohmic contacts to AlGaN/GaN heterostructures, J APPL PHYS, 89(10), 2001, pp. 5543-5546
Authors:
Shelton, BS
Lambert, DJH
Huang, JJ
Wong, MM
Chowdhury, U
Zhu, TG
Kwon, HK
Liliental-Weber, Z
Benarama, M
Feng, M
Dupuis, RD
Citation: Bs. Shelton et al., Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition, IEEE DEVICE, 48(3), 2001, pp. 490-494
Authors:
Jasinski, J
Yu, KM
Walukiewicz, W
Washburn, J
Liliental-Weber, Z
Citation: J. Jasinski et al., Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation, APPL PHYS L, 79(7), 2001, pp. 931-933
Authors:
Fang, ZQ
Look, DC
Jasinski, J
Benamara, M
Liliental-Weber, Z
Molnar, RJ
Citation: Zq. Fang et al., Evolution of deep centers in GaN grown by hydride vapor phase epitaxy, APPL PHYS L, 78(3), 2001, pp. 332-334
Authors:
Lim, SH
Washburn, J
Liliental-Weber, Z
Qiao, D
Citation: Sh. Lim et al., Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Alohmic contacts to n-AlGaN/GaN, APPL PHYS L, 78(24), 2001, pp. 3797-3799
Authors:
Jasinski, J
Swider, W
Liliental-Weber, Z
Visconti, P
Jones, KM
Reshchikov, MA
Yun, F
Morkoc, H
Park, SS
Lee, KY
Citation: J. Jasinski et al., Characterization of free-standing hydride vapor phase epitaxy GaN, APPL PHYS L, 78(16), 2001, pp. 2297-2299
Authors:
Mazur, JH
Benamara, M
Liliental-Weber, Z
Swider, W
Washburn, J
Eiting, CJ
Dupuis, RD
Citation: Jh. Mazur et al., Effect of the doping and the Al content on the microstructure and morphology of thin AlxGa1-xN layers grown by MOCVD., MRS I J N S, 5, 2000, pp. NIL_252-NIL_257
Authors:
Benamara, M
Liliental-Weber, Z
Mazur, JH
Swider, W
Washburn, J
Iwaya, M
Akasaki, I
Amano, H
Citation: M. Benamara et al., The role of the multi buffer layer technique on the structural quality of GaN, MRS I J N S, 5, 2000, pp. NIL_341-NIL_346
Authors:
Liliental-Weber, Z
Benamara, M
Swider, W
Washburn, J
Grzegory, I
Porowski, S
Dupuis, RD
Eiting, CJ
Citation: Z. Liliental-weber et al., Mg segregation, difficulties of P-doping in GaN, MRS I J N S, 5, 2000, pp. NIL_430-NIL_435
Authors:
Sasaki, A
Weber, ER
Liliental-Weber, Z
Ruvimov, S
Washburn, J
Nabetani, Y
Citation: A. Sasaki et al., Transition thickness of semiconductor heteroepitaxy, THIN SOL FI, 367(1-2), 2000, pp. 277-280
Authors:
Sirenko, AA
Fox, JR
Akimov, IA
Xi, XX
Ruvimov, S
Liliental-Weber, Z
Citation: Aa. Sirenko et al., In situ Raman scattering studies of the amorphous and crystalline Si nanoparticles, SOL ST COMM, 113(10), 2000, pp. 553-558
Authors:
Liliental-Weber, Z
Citation: Z. Liliental-weber, Derivation of growth mechanism of nano-defects in GaN from TEM data, J ELEC MICR, 49(2), 2000, pp. 339-348
Authors:
Kwon, HK
Eiting, CJ
Lambert, DJH
Wong, MM
Shelton, BS
Zhu, TG
Liliental-Weber, Z
Benamura, M
Dupuis, RD
Citation: Hk. Kwon et al., Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition, J CRYST GR, 221, 2000, pp. 240-245
Authors:
Lambert, DJH
Huang, JJ
Shelton, BS
Wong, MM
Chowdhury, U
Zhu, TG
Kwon, HK
Liliental-Weber, Z
Benarama, M
Feng, M
Dupuis, RD
Citation: Djh. Lambert et al., The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganicchemical vapor deposition, J CRYST GR, 221, 2000, pp. 730-733
Authors:
Benamara, M
Liliental-Weber, Z
Kellermann, S
Swider, W
Washburn, J
Mazur, J
Bourret-Courchesne, ED
Citation: M. Benamara et al., Study of high-quality GaN grown by OMVPE using an intermediate layer, J CRYST GR, 218(2-4), 2000, pp. 447-450
Authors:
Lim, SH
Swider, W
Washburn, J
Liliental-Weber, Z
Citation: Sh. Lim et al., Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN, J APPL PHYS, 88(11), 2000, pp. 6364-6368
Authors:
Kim, Y
Subramanya, SG
Siegle, H
Kruger, J
Perlin, P
Weber, ER
Ruvimov, S
Liliental-Weber, Z
Citation: Y. Kim et al., GaN thin films by growth on Ga-rich GaN buffer layers, J APPL PHYS, 88(10), 2000, pp. 6032-6036
Authors:
Bourret-Courchesne, ED
Kellermann, S
Yu, KM
Benamara, M
Liliental-Weber, Z
Washburn, J
Irvine, SJC
Stafford, A
Citation: Ed. Bourret-courchesne et al., Reduction of threading dislocation density in GaN using an intermediate temperature interlayer, APPL PHYS L, 77(22), 2000, pp. 3562-3564
Authors:
Ferrer, JC
Liliental-Weber, Z
Reese, H
Chiu, YJ
Hu, E
Citation: Jc. Ferrer et al., Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs, APPL PHYS L, 77(2), 2000, pp. 205-207
Authors:
Chernyak, L
Osinsky, A
Nootz, G
Schulte, A
Jasinski, J
Benamara, M
Liliental-Weber, Z
Look, DC
Molnar, RJ
Citation: L. Chernyak et al., Electron beam and optical depth profiling of quasibulk GaN, APPL PHYS L, 77(17), 2000, pp. 2695-2697