AAAAAA

   
Results: 1-16 |
Results: 16
MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors
Authors: Liu, WC Pan, HJ Yen, CH Lin, KP Wu, CZ Chiou, WH Chen, CY
Citation: Wc. Liu et al., MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistors, J PHYS IV, 11(PR3), 2001, pp. 931-936
MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations
Authors: Liu, WC Yu, KH Lin, KW Lin, KP Yen, CH Cheng, CC Wang, CK Chuang, HM
Citation: Wc. Liu et al., MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations, J PHYS IV, 11(PR3), 2001, pp. 951-955
Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic
Authors: Lin, KW Yu, KH Chang, WL Cheng, CC Lin, KP Yen, CH Lour, WS Liu, WC
Citation: Kw. Lin et al., Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic, SOL ST ELEC, 45(2), 2001, pp. 309-314
On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations
Authors: Liu, WC Yu, KH Lin, KW Tsai, JH Wu, CZ Lin, KP Yen, CH
Citation: Wc. Liu et al., On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations, IEEE DEVICE, 48(8), 2001, pp. 1522-1530
Improved n(+)-GaAs/p(+)-In0.49Ga0.51P/n-GaAs camel-like gate structure forhigh-breakdown, low-leakage, and high-temperature applications
Authors: Liu, WC Yu, KH Liu, RC Lin, KW Cheng, CC Lin, KP Yen, CH Wu, CZ
Citation: Wc. Liu et al., Improved n(+)-GaAs/p(+)-In0.49Ga0.51P/n-GaAs camel-like gate structure forhigh-breakdown, low-leakage, and high-temperature applications, APPL PHYS L, 79(7), 2001, pp. 967-969
Brain dysfunction explored by long latency reflex: a study of adrenomyeloneuropathy
Authors: Liao, KK Chen, JT Lin, KP Chen, CC Kao, KP Wu, ZA
Citation: Kk. Liao et al., Brain dysfunction explored by long latency reflex: a study of adrenomyeloneuropathy, ACT NEUR SC, 104(2), 2001, pp. 105-109
Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors
Authors: Yen, CH Lin, KP Yu, KH Chang, WL Lin, KW Liu, WC
Citation: Ch. Yen et al., Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors, J VAC SCI B, 18(6), 2000, pp. 2615-2619
Optic neuropathy in a patient with chronic inflammatory demyelinating polyneuropathy
Authors: Tsai, DC Lin, PK Lin, KP Kao, KP Liu, JH
Citation: Dc. Tsai et al., Optic neuropathy in a patient with chronic inflammatory demyelinating polyneuropathy, EYE, 14, 2000, pp. 911-912
Automatic breast region extraction from digital mammograms for PACS and telemammography applications
Authors: Lou, SL Lin, HD Lin, KP Hoogstrate, D
Citation: Sl. Lou et al., Automatic breast region extraction from digital mammograms for PACS and telemammography applications, COMP MED IM, 24(4), 2000, pp. 205-220
Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure
Authors: Lin, KP Yen, CH Chang, WL Yu, KH Lin, KW Liu, WC
Citation: Kp. Lin et al., Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure, SEMIC SCI T, 15(6), 2000, pp. 643-647
Charge transfer and hybridization effects in Ni3Al and Ni3Ga studies by x-ray-absorption spectroscopy and theoretical calculations
Authors: Chang, YK Lin, KP Pong, WF Tsai, MH Hseih, HH Pieh, JY Tseng, PK Lee, JF Hsu, LS
Citation: Yk. Chang et al., Charge transfer and hybridization effects in Ni3Al and Ni3Ga studies by x-ray-absorption spectroscopy and theoretical calculations, J APPL PHYS, 87(3), 2000, pp. 1312-1317
InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications
Authors: Yu, KH Lin, KW Cheng, CC Lin, KP Yen, CH Wu, CZ Liu, WC
Citation: Kh. Yu et al., InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications, ELECTR LETT, 36(22), 2000, pp. 1886-1888
Electronic structure of Ni3Al and Ni3Ga alloys
Authors: Pong, WF Lin, KP Chang, YK Tsai, MH Hsieh, HH Pieh, JY Tseng, PK Lee, JF Hsu, LS
Citation: Wf. Pong et al., Electronic structure of Ni3Al and Ni3Ga alloys, J SYNCHROTR, 6, 1999, pp. 731-733
Botulism: Heart rate variation, sympathetic skin responses, and plasma norepinephrine
Authors: Chen, JT Chen, CC Lin, KP Wang, SJ Wu, ZA Liao, KK
Citation: Jt. Chen et al., Botulism: Heart rate variation, sympathetic skin responses, and plasma norepinephrine, CAN J NEUR, 26(2), 1999, pp. 123-126
Measurement of the urinary lactate : creatinine ratio for the early identification of newborn infants at risk for hypoxic-ischemic encephalopathy
Authors: Huang, CC Wang, ST Chang, YC Lin, KP Wu, PL
Citation: Cc. Huang et al., Measurement of the urinary lactate : creatinine ratio for the early identification of newborn infants at risk for hypoxic-ischemic encephalopathy, N ENG J MED, 341(5), 1999, pp. 328-335
Heterogeneity of antibody specificity in taiwanese patients with polyneuropathy and IgM paraproteinemia
Authors: Lin, KP Tsai, CP Yamawaki, M Ariga, T Yu, RK
Citation: Kp. Lin et al., Heterogeneity of antibody specificity in taiwanese patients with polyneuropathy and IgM paraproteinemia, J BIOMED SC, 5(6), 1998, pp. 441-445
Risultati: 1-16 |