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Results:
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Results: 14
Authors:
Attenberger, W
Lindner, JKN
Schmid, M
Gerlach, JW
Stritzker, B
Citation: W. Attenberger et al., Composition analysis of oxidized buried SiC layers in silicon from EFTEM images, MAT SC S PR, 4(1-3), 2001, pp. 187-190
Authors:
Lindner, JKN
Citation: Jkn. Lindner, Ion beam synthesis of buried SiC layers in silicon: Basic physical processes, NUCL INST B, 178, 2001, pp. 44-54
Authors:
Bernas, H
Heinig, KH
Williams, J
Lindner, JKN
Citation: H. Bernas et al., Proceedings of the E-MRS 2000 Spring Meeting Symposium R on Materials Science with Ion Beams Strasbourg, France, 30 May-2 June 2000, NUCL INST B, 178, 2001, pp. VII-VII
Authors:
Lindner, JKN
Wenzel, S
Stritzker, B
Citation: Jkn. Lindner et al., Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions, NUCL INST B, 175, 2001, pp. 324-330
Authors:
Schreck, M
Hormann, F
Roll, H
Lindner, JKN
Stritzker, B
Citation: M. Schreck et al., Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films, APPL PHYS L, 78(2), 2001, pp. 192-194
Authors:
Lindner, JKN
Schlosser, W
Stritzker, B
Citation: Jkn. Lindner et al., Aluminum and aluminum nitride formation in sapphire by ion beam synthesis, NUCL INST B, 166, 2000, pp. 133-139
Authors:
Scharmann, F
Maslarski, P
Attenberger, W
Lindner, JKN
Stritzker, B
Stauden, T
Pezoldt, J
Citation: F. Scharmann et al., Investigation of the nucleation and growth of SiC nanostructures on Si, THIN SOL FI, 380(1-2), 2000, pp. 92-96
Authors:
Wieser, N
Ambacher, O
Angerer, H
Dimitrov, R
Stutzmann, M
Stritzker, B
Lindner, JKN
Citation: N. Wieser et al., Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN, PHYS ST S-B, 216(1), 1999, pp. 807-811
Authors:
Lindner, JKN
Stritzker, B
Citation: Jkn. Lindner et B. Stritzker, Mechanisms in the ion beam synthesis of SiC layers in silicon, NUCL INST B, 148(1-4), 1999, pp. 528-533
Authors:
Lindner, JKN
Baba, K
Hatada, R
Stritzker, B
Citation: Jkn. Lindner et al., Phase formation in silicon carbide, silicon, and glassy carbon after high-dose titanium implantation using a MEVVA ion source, NUCL INST B, 148(1-4), 1999, pp. 551-556
Authors:
Lindner, JKN
Stritzker, B
Citation: Jkn. Lindner et B. Stritzker, Controlling the density distribution of SiC nanocrystals for the ion beam synthesis of buried SiC layers in silicon, NUCL INST B, 147(1-4), 1999, pp. 249-255
Authors:
Schlosser, W
Lindner, JKN
Zeitler, M
Stritzker, B
Citation: W. Schlosser et al., Synthesis of single-crystalline Al layers in sapphire, NUCL INST B, 147(1-4), 1999, pp. 267-272
Authors:
Lindner, JKN
Svensson, BG
Hemment, PLF
Atwater, HA
Citation: Jkn. Lindner et al., Ion Implantation into Semiconductors, Oxides and Ceramics - Proceedings ofthe E-MRS 1998 Spring Meeting Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, Strasbourg, France, 16-19 June 1998 - Preface, NUCL INST B, 147(1-4), 1999, pp. VII-VIII
Authors:
Zhang, ZJ
Naramoto, H
Miyashita, A
Stritzker, B
Lindner, JKN
Citation: Zj. Zhang et al., Low-temperature epitaxial growth of beta-SiC by multiple-energy ion implantation, PHYS REV B, 58(19), 1998, pp. 12652-12654
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