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Results: 1-16 |
Results: 16
Conductivity type conversion of p-type CuInSe2 due to hydrogenation
Authors: Otte, K Lippold, G Hirsch, D Gebhardt, RK Chasse, T
Citation: K. Otte et al., Conductivity type conversion of p-type CuInSe2 due to hydrogenation, APPL SURF S, 179(1-4), 2001, pp. 203-208
In situ XPS investigations of ion beam hydrogenation of CuInSe2
Authors: Otte, K Lippold, G Hirsch, D Chasse, T Schindler, A Yakushev, MV Martin, RW Bigl, F
Citation: K. Otte et al., In situ XPS investigations of ion beam hydrogenation of CuInSe2, THIN SOL FI, 387(1-2), 2001, pp. 185-188
Sodium induced secondary phase segregations in CuGaSe2 thin films
Authors: Nadenau, V Lippold, G Rau, U Schock, HW
Citation: V. Nadenau et al., Sodium induced secondary phase segregations in CuGaSe2 thin films, J CRYST GR, 233(1-2), 2001, pp. 13-21
Anisotropic dielectric function spectra from single-crystal CuInSe2 with orientation domains
Authors: Kreuter, A Wagner, G Otte, K Lippold, G Schindler, A Schubert, M
Citation: A. Kreuter et al., Anisotropic dielectric function spectra from single-crystal CuInSe2 with orientation domains, APPL PHYS L, 78(2), 2001, pp. 195-197
Morphological, structural and electronic damage on InAs and InSb surfaces induced by (reactive) ion beam etching
Authors: Frost, F Lippold, G Schindler, A Bigl, F
Citation: F. Frost et al., Morphological, structural and electronic damage on InAs and InSb surfaces induced by (reactive) ion beam etching, DEFECT DIFF, 183-1, 2000, pp. 127-146
Phase constitution and element distribution in Cu-In-S based absorber layers grown by the CISCuT-process
Authors: Winkler, M Tober, O Penndorf, J Szulzewsky, K Roser, D Lippold, G Otte, K
Citation: M. Winkler et al., Phase constitution and element distribution in Cu-In-S based absorber layers grown by the CISCuT-process, THIN SOL FI, 361, 2000, pp. 273-277
XPS and raman investigations of nitrogen ion etching for depth profiling of CuInSe2 and CuGaSe2
Authors: Otte, K Lippold, G Hirsch, D Schindler, A Bigl, F
Citation: K. Otte et al., XPS and raman investigations of nitrogen ion etching for depth profiling of CuInSe2 and CuGaSe2, THIN SOL FI, 361, 2000, pp. 498-503
Ag-doped double-sided PLD-YBCO thin films for passive microwave devices infuture communication systems
Authors: Lorenz, M Hochmuth, H Natusch, D Lippold, G Svetchnikov, VL Kaiser, T Hein, MA Schwab, R Heidinger, R
Citation: M. Lorenz et al., Ag-doped double-sided PLD-YBCO thin films for passive microwave devices infuture communication systems, IEEE APPL S, 9(2), 1999, pp. 1936-1939
Infrared and Raman study of lattice vibrations of CdAl2Se4 and CdAl2S4 single crystals
Authors: Eifler, A Hecht, JD Riede, V Lippold, G Schmitz, W Krauss, G Kramer, V Grill, W
Citation: A. Eifler et al., Infrared and Raman study of lattice vibrations of CdAl2Se4 and CdAl2S4 single crystals, J PHYS-COND, 11(25), 1999, pp. 4821-4832
On the redistribution of 20 keV lithium in CuInSe2
Authors: Fink, D Lippold, G Yakushev, MV Tomlinson, RD Pilkington, RD
Citation: D. Fink et al., On the redistribution of 20 keV lithium in CuInSe2, SOL EN MAT, 59(3), 1999, pp. 217-231
Combined infrared and Raman study of the optical phonons of defect chalcopyrite single crystals
Authors: Eifler, A Hecht, JD Lippold, G Riede, V Grill, W Krauss, G Kramer, V
Citation: A. Eifler et al., Combined infrared and Raman study of the optical phonons of defect chalcopyrite single crystals, PHYSICA B, 263, 1999, pp. 806-808
Smoothing of polycrystalline Cu(ln,Ga)(Se,S)(2) thin films by low-energy ion-beam etching
Authors: Frost, F Lippold, G Otte, K Hirsch, D Schindler, A Bigl, F
Citation: F. Frost et al., Smoothing of polycrystalline Cu(ln,Ga)(Se,S)(2) thin films by low-energy ion-beam etching, J VAC SCI A, 17(3), 1999, pp. 793-798
Low energy ion beam etching of CuInSe2 surfaces
Authors: Otte, K Lippold, G Frost, A Schindler, A Bigl, F Yakushev, MV Tomlinson, RD
Citation: K. Otte et al., Low energy ion beam etching of CuInSe2 surfaces, J VAC SCI A, 17(1), 1999, pp. 19-25
Hard amorphous CSixNy thin films deposited by RF nitrogen plasma assisted pulsed laser ablation of mixed graphite/Si3N4-targets
Authors: Tharigen, T Lippold, G Riede, V Lorenz, M Koivusaari, KJ Lorenz, D Mosch, S Grau, P Hesse, R Streubel, P Szargan, R
Citation: T. Tharigen et al., Hard amorphous CSixNy thin films deposited by RF nitrogen plasma assisted pulsed laser ablation of mixed graphite/Si3N4-targets, THIN SOL FI, 348(1-2), 1999, pp. 103-113
Ion beam etching induced structural and electronic modification of InAs and InSb surfaces studied by Raman spectroscopy
Authors: Frost, F Lippold, G Schindler, A Bigl, F
Citation: F. Frost et al., Ion beam etching induced structural and electronic modification of InAs and InSb surfaces studied by Raman spectroscopy, J APPL PHYS, 85(12), 1999, pp. 8378-8385
Study of InAs quantum dots in GaAs prepared on misoriented substrates
Authors: Oswald, J Hulicius, E Vorlicek, V Pangrac, J Melichar, K Simecek, T Lippold, G Riede, V
Citation: J. Oswald et al., Study of InAs quantum dots in GaAs prepared on misoriented substrates, THIN SOL FI, 336(1-2), 1998, pp. 80-83
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