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Authors:
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Niel, S
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Chantre, A
Citation: G. Vincent et al., Static and dynamic characteristics of a 54 GHz f(max) implanted base 0.35 mu m single-polysilicon bipolar technology, JPN J A P 1, 38(11), 1999, pp. 6258-6263
Authors:
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Mourier, Y
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Laurens, F
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Citation: P. Llinares et al., Determination of base and emitter resistances in bipolar junction transistors from low frequency noise and static measurements, IEICE TR EL, E82C(4), 1999, pp. 607-611
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Dutartre, D
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Marty, M
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Perrotin, A
de Pontcharra, J
Regolini, JL
Vincent, G
Chantre, A
Citation: S. Jouan et al., A high-speed low 1/f noise SiGeHBT technology using epitaxially-aligned polysilicon emitters, IEEE DEVICE, 46(7), 1999, pp. 1525-1531