ACNP - Italian Periodicals Catalogue

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Results: 1-20 |

Results: 20

Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates

Authors: Zehnder, U Weimar, A Strauss, U Fehrer, M Hahn, B Lugauer, HJ Harle, V

Citation: U. Zehnder et al., Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates, J CRYST GR, 230(3-4), 2001, pp. 497-502

Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC

Authors: Baur, J Strauss, U Bruederl, G Eisert, D Oberschmid, R Hahn, B Lugauer, HJ Bader, S Zehnder, U Fehrer, M Harle, V

Citation: J. Baur et al., Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC, J CRYST GR, 230(3-4), 2001, pp. 507-511

GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics

Authors: Schwegler, V Schad, SS Scherer, M Kamp, M Ulu, G Emsley, M Unlu, MS Lell, A Bader, S Hahne, B Lugauer, HJ Kuhn, F Weimar, A Harle, V

Citation: V. Schwegler et al., GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics, J CRYST GR, 230(3-4), 2001, pp. 512-516

Optical gain and saturation in nitride-based laser structures

Authors: Vehse, M Michler, R Lange, O Rowe, M Gutowski, J Bader, S Lugauer, HJ Bruderl, G Weimar, A Lell, A Harle, V

Citation: M. Vehse et al., Optical gain and saturation in nitride-based laser structures, APPL PHYS L, 79(12), 2001, pp. 1763-1765

Strongly index-guided II-VI laser diodes

Authors: Legge, M Bacher, G Bader, S Forchel, A Lugauer, HJ Waag, A Landwehr, G

Citation: M. Legge et al., Strongly index-guided II-VI laser diodes, IEEE PHOTON, 12(3), 2000, pp. 236-238

GaN-based LEDs and lasers on SiC

Authors: Harle, V Hahn, B Lugauer, HJ Bader, S Bruderl, G Baur, J Eisert, D Strauss, U Zehnder, U Lell, A Hiller, N

Citation: V. Harle et al., GaN-based LEDs and lasers on SiC, PHYS ST S-A, 180(1), 2000, pp. 5-13

First European GaN-based violet laser diode

Authors: Bader, S Hahn, B Lugauer, HJ Lell, A Weimar, A Bruderl, G Baur, J Eisert, D Scheubeck, M Heppel, S Hangleiter, A Harle, V

Citation: S. Bader et al., First European GaN-based violet laser diode, PHYS ST S-A, 180(1), 2000, pp. 177-182

ZnSe/BeTe type-II light emitting diodes

Authors: Reuscher, G Keim, M Lugauer, HJ Waag, A Landwehr, G

Citation: G. Reuscher et al., ZnSe/BeTe type-II light emitting diodes, PHYS ST S-A, 180(1), 2000, pp. 225-229

Gain saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures

Authors: Michler, P Lange, O Vehse, M Gutowski, J Bader, S Hahn, B Lugauer, HJ Harle, V

Citation: P. Michler et al., Gain saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures, PHYS ST S-A, 180(1), 2000, pp. 391-396

ZnSe/BeTe type-II LEDs emitting between 640 and 515 nm

Authors: Reuscher, G Keim, M Lugauer, HJ Waag, A Landwehr, G

Citation: G. Reuscher et al., ZnSe/BeTe type-II LEDs emitting between 640 and 515 nm, J CRYST GR, 214, 2000, pp. 1071-1074

p(+)-BeTe/n(+)-ZnSe ESAKI tunnelling heterojunctions for II-VI optoelectronic devices

Authors: Reuscher, G Landwehr, G Keim, M Lugauer, HJ Fischer, F Waag, A

Citation: G. Reuscher et al., p(+)-BeTe/n(+)-ZnSe ESAKI tunnelling heterojunctions for II-VI optoelectronic devices, ELECTR LETT, 36(3), 2000, pp. 247-249

Blue light emitting diode based on p(+)-BeTe/n(+)-ZnSe ESAKI tunnelling heterojunction

Authors: Reuscher, G Landwehr, G Keim, M Lugauer, HJ Fischer, F Waag, A

Citation: G. Reuscher et al., Blue light emitting diode based on p(+)-BeTe/n(+)-ZnSe ESAKI tunnelling heterojunction, ELECTR LETT, 36(12), 2000, pp. 1056-1058

Blue-green ZnSe lasers with a new type of active region

Authors: Ivanov, SV Toropov, AA Sorokin, SV Shubina, TV Sedova, IV Kop'ev, PS Alferov, ZI Waag, A Lugauer, HJ Reuscher, G Keim, M Fischer, FF Landwehr, G

Citation: Sv. Ivanov et al., Blue-green ZnSe lasers with a new type of active region, SEMICONDUCT, 33(9), 1999, pp. 1016-1020

Cathodoluminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures

Authors: Solov'ev, VA Sorokin, SV Sedova, IV Mosina, GN Ivanov, SV Lugauer, HJ Reuscher, G Keim, M Waag, A Landwehr, G

Citation: Va. Solov'Ev et al., Cathodoluminescence study of molecular beam epitaxy (MBE) grown MgZnSSe and BeMgZnSe alloy based heterostructures, J CRYST GR, 202, 1999, pp. 481-485

MBE-grown laser diodes based on beryllium containing II-VI semiconductors

Authors: Lugauer, HJ Keim, M Reuscher, G Grabs, P Lunz, U Waag, A Landwehr, G Ivanov, S Shubina, T Toropov, A Il'inskaya, N Kop'ev, P Alferov, Z

Citation: Hj. Lugauer et al., MBE-grown laser diodes based on beryllium containing II-VI semiconductors, J CRYST GR, 202, 1999, pp. 927-932

Optical characterization of MBE grown ZnSe-based QW laser heterostructures

Authors: Shubina, TV Toropov, AA Lebedev, AV Ivanov, SV Kop'ev, PS Lugauer, HJ Reuscher, G Keim, M Worschech, L Waag, A Landwehr, G

Citation: Tv. Shubina et al., Optical characterization of MBE grown ZnSe-based QW laser heterostructures, J CRYST GR, 202, 1999, pp. 946-949

High response photodiodes based on Be-chalcogenides

Authors: Siess, J Reuscher, G Grabs, P Lugauer, HJ Schallenberg, T Ehinger, M Waag, A Landwehr, G

Citation: J. Siess et al., High response photodiodes based on Be-chalcogenides, J CRYST GR, 202, 1999, pp. 965-967

Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes

Authors: Ankudinov, AV Titkov, AN Shubina, TV Ivanov, SV Kop'ev, PS Lugauer, HJ Reuscher, G Keim, M Waag, A Landwehr, G

Citation: Av. Ankudinov et al., Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes, APPL PHYS L, 75(17), 1999, pp. 2626-2628

Wavelength-dependent optical degradation of green II-VI laser diodes

Authors: Vogelgesang, R Liang, JJ Wagner, V Lugauer, HJ Geurts, J Waag, A Landwehr, G

Citation: R. Vogelgesang et al., Wavelength-dependent optical degradation of green II-VI laser diodes, APPL PHYS L, 75(10), 1999, pp. 1351-1353

CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers

Authors: Ivanov, SV Toropov, AA Sorokin, SV Shubina, TV Sedova, IV Sitnikova, AA Kop'ev, PS Alferov, ZI Lugauer, HJ Reuscher, G Keim, M Fischer, F Waag, A Landwehr, G

Citation: Sv. Ivanov et al., CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers, APPL PHYS L, 74(4), 1999, pp. 498-500

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