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Results: 1-10 |
Results: 10
Low-energy recoils in crystalline silicon: Quantum simulations - art. no. 195207
Authors: Mazzarolo, M Colombo, L Lulli, G Albertazzi, E
Citation: M. Mazzarolo et al., Low-energy recoils in crystalline silicon: Quantum simulations - art. no. 195207, PHYS REV B, 6319(19), 2001, pp. 5207
Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra
Authors: Lulli, G Albertazzi, E Bianconi, M Bentini, GG Nipoti, R Lotti, R
Citation: G. Lulli et al., Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering-channeling spectra, NUCL INST B, 170(1-2), 2000, pp. 1-9
The minimum yield in channeling
Authors: Uguzzoni, A Gartner, K Lulli, G Andersen, JU
Citation: A. Uguzzoni et al., The minimum yield in channeling, NUCL INST B, 164, 2000, pp. 53-60
The Si surface yield as a calibration standard for RBS
Authors: Bianconi, M Abel, F Banks, JC Font, AC Cohen, C Doyle, BL Lotti, R Lulli, G Nipoti, R Vickridge, I Walsh, D Wendler, E
Citation: M. Bianconi et al., The Si surface yield as a calibration standard for RBS, NUCL INST B, 161, 2000, pp. 293-296
Damage profiles in high-energy As implanted Si
Authors: Lulli, G Bianconi, M Parisini, A Sama, S Servidori, M
Citation: G. Lulli et al., Damage profiles in high-energy As implanted Si, J APPL PHYS, 88(7), 2000, pp. 3993-3999
Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions
Authors: Lulli, G Bianconi, M Solmi, S Napolitani, E Carnera, A
Citation: G. Lulli et al., Vacancy effects in transient diffusion of Sb induced by ion implantation of Si+ and As+ ions, J APPL PHYS, 87(12), 2000, pp. 8461-8466
Massively parallel processing approach to fractal image compression with near-optimal coefficient quantization
Authors: Palazzari, P Coli, M Lulli, G
Citation: P. Palazzari et al., Massively parallel processing approach to fractal image compression with near-optimal coefficient quantization, J SYST ARCH, 45(10), 1999, pp. 765-779
Off-axis electron holography of nearly-spherical faceted voids in self-annealed implanted silicon
Authors: Beeli, C Matteucci, G Lulli, G Merli, PG Migliori, A
Citation: C. Beeli et al., Off-axis electron holography of nearly-spherical faceted voids in self-annealed implanted silicon, MATER CHAR, 42(4-5), 1999, pp. 241-247
Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC
Authors: Lulli, G Albertazzi, E Bianconi, M Nipoti, R
Citation: G. Lulli et al., Binary collision approximation modeling of ion-induced damage effects in crystalline 6H-SiC, NUCL INST B, 148(1-4), 1999, pp. 573-577
Electron holography study of voids in self-annealed implanted silicon
Authors: Beeli, C Matteucci, G Lulli, G Merli, PG Migliori, A
Citation: C. Beeli et al., Electron holography study of voids in self-annealed implanted silicon, PHIL MAG L, 78(6), 1998, pp. 445-451
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