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Results: 1-12 |
Results: 12
Anomalous behavior of the Fermi energy in heavily tin-doped InGaAs
Authors: Tsukernik, A Cheskis, D Potashnik, O Palevski, A Bar-Ad, S Luryi, S Cho, A
Citation: A. Tsukernik et al., Anomalous behavior of the Fermi energy in heavily tin-doped InGaAs, EUR PHY J B, 23(3), 2001, pp. 341-344
Interband tunneling depopulation in type-II InAs/GaSb cascade laser heterostructure
Authors: Kisin, MV Stroscio, MA Luryi, S Belenky, G
Citation: Mv. Kisin et al., Interband tunneling depopulation in type-II InAs/GaSb cascade laser heterostructure, PHYSICA E, 10(4), 2001, pp. 576-586
Quantum magnetotransport in periodic V-grooved heterojunctions - art. no. 153315
Authors: Tsukernik, A Palevski, A Goldman, VJ Luryi, S Kapon, E Rudra, A
Citation: A. Tsukernik et al., Quantum magnetotransport in periodic V-grooved heterojunctions - art. no. 153315, PHYS REV B, 6315(15), 2001, pp. 3315
InAs/GaSb-based lateral current injection laser
Authors: Laikhtman, B Luryi, S Belenky, G
Citation: B. Laikhtman et al., InAs/GaSb-based lateral current injection laser, J APPL PHYS, 90(11), 2001, pp. 5478-5482
Tunneling-injection quantum-dot laser: Ultrahigh temperature stability
Authors: Asryan, LV Luryi, S
Citation: Lv. Asryan et S. Luryi, Tunneling-injection quantum-dot laser: Ultrahigh temperature stability, IEEE J Q EL, 37(7), 2001, pp. 905-910
Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-mu m InGaAsP-InP multiple-quantum-well lasers
Authors: Belenky, G Reynolds, CL Shterengas, L Hybertsen, MS Donetsky, DV Shtengel, GE Luryi, S
Citation: G. Belenky et al., Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-mu m InGaAsP-InP multiple-quantum-well lasers, IEEE PHOTON, 12(8), 2000, pp. 969-971
Generation of equivalent circuits from physics-based device simulation
Authors: Pacelli, A Mastrapasqua, M Luryi, S
Citation: A. Pacelli et al., Generation of equivalent circuits from physics-based device simulation, IEEE COMP A, 19(11), 2000, pp. 1241-1250
Parallel processor configuration design with processing/transmission costs
Authors: Charcranoon, S Robertazzi, TG Luryi, S
Citation: S. Charcranoon et al., Parallel processor configuration design with processing/transmission costs, IEEE COMPUT, 49(9), 2000, pp. 987-991
Tailoring of optical phonon modes in nanoscale semiconductor structures: role of interface-optical phonons in quantum-well lasers
Authors: Belenky, G Dutta, M Gorfinkel, VB Haddad, GI Iafrate, GJ Kim, KW Kisin, M Luryi, S Stroscio, MA Sun, JP Teng, HB Yu, SG
Citation: G. Belenky et al., Tailoring of optical phonon modes in nanoscale semiconductor structures: role of interface-optical phonons in quantum-well lasers, PHYSICA B, 263, 1999, pp. 462-465
Direct measurements of heterobarrier leakage current and modal gain in 2.3mu m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers
Authors: Donetsky, DV Belenky, GL Garbuzov, DZ Lee, H Martinelli, RU Taylor, G Luryi, S Connolly, JC
Citation: Dv. Donetsky et al., Direct measurements of heterobarrier leakage current and modal gain in 2.3mu m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers, ELECTR LETT, 35(4), 1999, pp. 298-299
Phonon enhanced inverse population in asymmetric double quantum wells
Authors: Stroscio, MA Kisin, M Belenky, G Luryi, S
Citation: Ma. Stroscio et al., Phonon enhanced inverse population in asymmetric double quantum wells, APPL PHYS L, 75(21), 1999, pp. 3258-3260
Hot electrons in semiconductor devices
Authors: Luryi, S
Citation: S. Luryi, Hot electrons in semiconductor devices, S SEMI SCI, 5, 1998, pp. 385-427
Risultati: 1-12 |