Citation: V. Jayaraman et al., UNIFORM THRESHOLD CURRENT, CONTINUOUS-WAVE, SINGLEMODE 1300NM VERTICAL-CAVITY LASERS FROM 0-DEGREES-C TO 70-DEGREES-C, Electronics Letters, 34(14), 1998, pp. 1405-1407
Authors:
MACDOUGAL MH
DAPKUS PD
BOND AE
LIN CK
GESKE J
Citation: Mh. Macdougal et al., DESIGN AND FABRICATION OF VCSELS WITH ALXOY-GAAS DBRS, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 905-915
Authors:
RAMMOHAN K
RICH DH
MACDOUGAL MH
DAPKUS PD
Citation: K. Rammohan et al., THERMAL-PROCESSING OF STRAINED INGAAS GAAS QUANTUM-WELL HETEROSTRUCTURES BONDED TO SI VIA AN EPITAXIAL LIFT-OFF TECHNIQUE/, Applied physics letters, 70(12), 1997, pp. 1599-1601
Citation: Y. Cheng et al., LASING CHARACTERISTICS OF HIGH-PERFORMANCE NARROW-STRIPE INGAAS-GAAS QUANTUM-WELL LASERS CONFINED BY ALAS NATIVE-OXIDE, IEEE photonics technology letters, 8(2), 1996, pp. 176-178
Citation: Gm. Yang et al., EFFECTS OF CURRENT SPREADING UNDER OXIDE CURRENT APERTURE IN VERTICAL-CAVITY SURFACE-EMITTING LASERS, Journal of applied physics, 80(9), 1996, pp. 4837-4840
Authors:
ZHAO HM
MACDOUGAL MH
DAPKUS PD
UPPAL K
CHENG Y
YANG GM
Citation: Hm. Zhao et al., SUBMILLIAMPERE THRESHOLD CURRENT INGAAS-GAAS-ALGAAS LASERS AND LASER ARRAYS GROWN ON NONPLANAR SUBSTRATES, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 196-202
Citation: Mh. Macdougal et al., EPITAXIAL (AL,GA)INP OXIDE DISTRIBUTED BRAGG REFLECTORS FOR USE IN VISIBLE-WAVELENGTH OPTICAL-DEVICES, IEEE photonics technology letters, 7(4), 1995, pp. 385-387
Authors:
MACDOUGAL MH
DAPKUS PD
PUDIKOV V
ZHAO HM
YANG GM
Citation: Mh. Macdougal et al., ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH ALAS OXIDE-GAAS DISTRIBUTED BRAGG REFLECTORS, IEEE photonics technology letters, 7(3), 1995, pp. 229-231
Citation: Gm. Yang et al., INFLUENCE OF MIRROR REFLECTIVITY ON LASER PERFORMANCE OF VERY-LOW-THRESHOLD VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 7(11), 1995, pp. 1228-1230
Citation: Gm. Yang et al., MICROCAVITY EFFECTS ON THE SPONTANEOUS EMISSION FROM INGAAS GAAS QUANTUM-WELLS/, Journal of applied physics, 78(6), 1995, pp. 3605-3609
Citation: Gm. Yang et al., ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS OBTAINED WITH SELECTIVE OXIDATION, Electronics Letters, 31(11), 1995, pp. 886-888
Authors:
ZHAO HM
UPPAL K
MACDOUGAL MH
DAPKUS PD
LIN HT
RICH DH
Citation: Hm. Zhao et al., GROWTH AND DOPING PROPERTIES OF ALGAAS GAAS/INGAAS STRUCTURES ON NONPLANAR SUBSTRATES FOR APPLICATIONS TO LOW-THRESHOLD LASERS/, Journal of crystal growth, 145(1-4), 1994, pp. 824-831