Authors:
CHEN CL
MAHONEY LJ
CALAWA SD
MATHEWS RH
MOLVAR KM
SAGE JP
MAKI PA
SOLLNER TCLG
Citation: Cl. Chen et al., PLANAR INTEGRATION OF A RESONANT-TUNNELING DIODE WITH PHEMT USING A NOVEL PROTON IMPLANTATION TECHNIQUE, IEEE electron device letters, 19(12), 1998, pp. 478-480
Citation: Lj. Mahoney, RESEARCHING WESTERN HISTORY - TOPICS IN THE 20TH-CENTURY - NASH,GD, ETULAIN,RW, Pacific Northwest quarterly, 89(4), 1998, pp. 212-213
Authors:
CHEN CL
MATHEWS RH
MAHONEY LJ
MAKI PA
MOLVAR KM
SAGE JP
FITCH GL
SOLLNER TCLG
Citation: Cl. Chen et al., NEW SELF-ALIGNED PLANAR RESONANT-TUNNELING DIODES FOR MONOLITHIC CIRCUITS, IEEE electron device letters, 18(10), 1997, pp. 489-491
Citation: Lj. Mahoney, HISTORY OF PLACER AND QUARTZ GOLD MINING IN THE COEUR-DALENE DISTRICT- SMITH,RW, Pacific Northwest quarterly, 88(1), 1997, pp. 48-48
Authors:
CHEN CL
MAHONEY LJ
CALAWA SD
MOLVAR KM
CALAWA AR
Citation: Cl. Chen et al., SELF-ALIGNED PSEUDOMORPHIC HEMT WITH A LOW-TEMPERATURE-GROWN GAAS GATE INSULATOR, Electronics Letters, 33(7), 1997, pp. 640-642
Authors:
CLARK RM
WHELAN T
LEVINE M
ROBERTS R
WILLAN A
MCCULLOCH P
LIPA M
WILKINSON RH
MAHONEY LJ
Citation: Rm. Clark et al., RANDOMIZED CLINICAL-TRIAL OF BREAST IRRADIATION FOLLOWING LUMPECTOMY AND AXILLARY DISSECTION FOR NODE-NEGATIVE BREAST-CANCER - AN UPDATE, Journal of the National Cancer Institute, 88(22), 1996, pp. 1659-1664
Authors:
CHEN CL
MAHONEY LJ
NICHOLS KB
MANFRA MJ
BROWN ER
NITISHIN PM
MOLVAR KM
GRAMSTORFF BF
MURPHY RA
Citation: Cl. Chen et al., EFFECTS OF LOW-TEMPERATURE-GROWN GAAS AND ALGAAS ON THE CURRENT OF A METAL-INSULATOR-SEMICONDUCTOR STRUCTURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1745-1751
Authors:
CHEN CL
MAHONEY LJ
NICHOLS KB
BROWN ER
GRAMSTORFF BF
Citation: Cl. Chen et al., SELF-ALIGNED P-CHANNEL MISFET WITH A LOW-TEMPERATURE-GROWN GAAS GATE INSULATOR, IEEE electron device letters, 17(8), 1996, pp. 413-415
Citation: Ae. Wendt et Lj. Mahoney, RADIO-FREQUENCY INDUCTIVE DISCHARGE SOURCE DESIGN FOR LARGE-AREA PROCESSING, Pure and applied chemistry, 68(5), 1996, pp. 1055-1058
Citation: Lj. Mahoney, THE FRONTIER IN AMERICAN CULTURE, ESSAYS BY WHITE,RICHARD AND LIMERICK,PATRICIA,NELSON - GROSSMAN,JH, Oregon historical quarterly, 97(1), 1996, pp. 113-114
Citation: Cl. Chen et al., SELF-ALIGNED COMPLEMENTARY GAAS MISFETS USING A LOW-TEMPERATURE-GROWNGAAS GATE INSULATOR, Electronics Letters, 32(4), 1996, pp. 407-409
Authors:
CHEN CL
MAHONEY LJ
NICHOLS KB
MANFRA MJ
GRAMSTORFF BF
MOLVAR KM
MURPHY RA
BROWN ER
Citation: Cl. Chen et al., SELF-ALIGNED GAAS MISFETS WITH A LOW-TEMPERATURE-GROWN GAAS GATE INSULATOR, IEEE electron device letters, 16(5), 1995, pp. 199-201
Authors:
BROWN ER
CHEN CL
MAHONEY LJ
MAKI PA
NICHOLS KB
Citation: Er. Brown et al., SUPPRESSED GATE CURRENT IN A SUPERLATTICE-INSULATED-GATE FIELD-EFFECTTRANSISTOR ON INP, Applied physics letters, 66(18), 1995, pp. 2352-2354
Citation: Df. Beale et al., SPATIALLY-RESOLVED OPTICAL-EMISSION FOR CHARACTERIZATION OF A PLANAR RADIO-FREQUENCY INDUCTIVELY-COUPLED DISCHARGE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(5), 1994, pp. 2775-2779
Authors:
WHELAN T
CLARK R
ROBERTS R
LEVINE M
FOSTER G
MCCULLOCH PB
BASRUR VR
LIPA M
WILKINSON RH
MAHONEY LJ
NAIR BD
MCDERMOT RS
WONG CS
CORBETT PJ
Citation: T. Whelan et al., IPSILATERAL BREAST-TUMOR RECURRENCE POSTLUMPECTOMY IS PREDICTIVE OF SUBSEQUENT MORTALITY - RESULTS FROM A RANDOMIZED TRIAL, International journal of radiation oncology, biology, physics, 30(1), 1994, pp. 11-16
Authors:
MAHONEY LJ
WENDT AE
BARRIOS E
RICHARDS CJ
SHOHET JL
Citation: Lj. Mahoney et al., ELECTRON-DENSITY AND ENERGY-DISTRIBUTIONS IN A PLANAR INDUCTIVELY-COUPLED DISCHARGE, Journal of applied physics, 76(4), 1994, pp. 2041-2047
Citation: Vi. Kolobov et al., NONLOCAL ELECTRON KINETICS IN A LOW-PRESSURE INDUCTIVELY-COUPLED RADIOFREQUENCY DISCHARGE, Applied physics letters, 65(5), 1994, pp. 537-539
Authors:
CHEN CL
SMITH FW
MAHONEY LJ
MANFRA MJ
CALAWA AR
Citation: Cl. Chen et al., FREQUENCY DISPERSION OF TRANSCONDUCTANCE AND OUTPUT RESISTANCE IN GAAS-MESFETS WITH LOW-TEMPERATURE-GROWN GAAS PASSIVATION LAYERS, Electronics Letters, 29(5), 1993, pp. 499-501