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Results: 1-25 | 26-27
Results: 1-25/27
ELECTRICAL-PROPERTIES OF N2O NH3 PLASMA GROWN OXYNITRIDE ON STRAINED-SI/
Authors: BERA LK RAY SK MUKHOPADHYAY M NAYAK DK USAMI N SHIRAKI Y MAITI CK
Citation: Lk. Bera et al., ELECTRICAL-PROPERTIES OF N2O NH3 PLASMA GROWN OXYNITRIDE ON STRAINED-SI/, IEEE electron device letters, 19(8), 1998, pp. 273-275
ELECTRICAL-PROPERTIES OF THIN POLYOXIDES GROWN AT A LOW-TEMPERATURE USING MICROWAVE OXYGEN PLASMA
Authors: SAHA C BERA LK RAY SK MAITI CK LAHIRI SK
Citation: C. Saha et al., ELECTRICAL-PROPERTIES OF THIN POLYOXIDES GROWN AT A LOW-TEMPERATURE USING MICROWAVE OXYGEN PLASMA, Semiconductor science and technology, 13(6), 1998, pp. 599-602
MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED SI1-XGEX LAYERS ON GRADEDSI1-YGEY FOR PT SILICIDE SCHOTTKY DIODES
Authors: DENTEL D KUBLER L BISCHOFF JL CHATTOPADHYAY S BERA LK RAY SK MAITI CK
Citation: D. Dentel et al., MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED SI1-XGEX LAYERS ON GRADEDSI1-YGEY FOR PT SILICIDE SCHOTTKY DIODES, Semiconductor science and technology, 13(2), 1998, pp. 214-219
STRAINED-SI HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
Authors: MAITI CK BERA LK CHATTOPADHYAY S
Citation: Ck. Maiti et al., STRAINED-SI HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, Semiconductor science and technology (Print), 13(11), 1998, pp. 1225-1246
ELECTRON-CYCLOTRON-RESONANCE (ECR) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON DIOXIDE ON STRAINED-SIGE FILMS USING TETRAETHYLORTHOSILICATE
Authors: BERA LK RAY SK BANERJEE HD MAITI CK
Citation: Lk. Bera et al., ELECTRON-CYCLOTRON-RESONANCE (ECR) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON DIOXIDE ON STRAINED-SIGE FILMS USING TETRAETHYLORTHOSILICATE, Bulletin of Materials Science, 21(4), 1998, pp. 283-286
MOS CAPACITOR CHARACTERISTICS OF PLASMA OXIDE ON PARTIALLY STRAINED SIGEC FILMS
Authors: RAY SK BERA LK MAITI CK JOHN S BANERJEE SK
Citation: Sk. Ray et al., MOS CAPACITOR CHARACTERISTICS OF PLASMA OXIDE ON PARTIALLY STRAINED SIGEC FILMS, Thin solid films, 332(1-2), 1998, pp. 375-378
STRAINED-SI CHANNEL HETEROJUNCTION P-MOSFETS
Authors: ARMSTRONG GA MAITI CK
Citation: Ga. Armstrong et Ck. Maiti, STRAINED-SI CHANNEL HETEROJUNCTION P-MOSFETS, Solid-state electronics, 42(4), 1998, pp. 487-498
MICROWAVE PLASMA NITRIDATION OF SILICON DIOXIDE ON STRAINED SI
Authors: BERA LK BANERJEE HD RAY SK MUKHOPADHYAY M MAITI CK
Citation: Lk. Bera et al., MICROWAVE PLASMA NITRIDATION OF SILICON DIOXIDE ON STRAINED SI, Applied physics letters, 73(11), 1998, pp. 1559-1561
ELECTRICAL CHARACTERISTICS OF PLASMA OXIDIZED SI1-X-YYGEXCY METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: RAY SK BERA LK MAITI CK JOHN S BANERJEE SK
Citation: Sk. Ray et al., ELECTRICAL CHARACTERISTICS OF PLASMA OXIDIZED SI1-X-YYGEXCY METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Applied physics letters, 72(10), 1998, pp. 1250-1252
COMPARISON OF SI1-YCY FILMS PRODUCED BY SOLID-PHASE EPITAXY AND RAPIDTHERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: RAY SK MCNEILL DW GAY DL MAITI CK ARMSTRONG GA ARMSTRONG BM GAMBLE HS
Citation: Sk. Ray et al., COMPARISON OF SI1-YCY FILMS PRODUCED BY SOLID-PHASE EPITAXY AND RAPIDTHERMAL CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 294(1-2), 1997, pp. 149-152
HOLE MOBILITY ENHANCEMENT IN STRAINED-SI P-MOSFETS UNDER HIGH VERTICAL FIELD
Authors: MAITI CK BERA LK DEY SS NAYAK DK CHAKRABARTI NB
Citation: Ck. Maiti et al., HOLE MOBILITY ENHANCEMENT IN STRAINED-SI P-MOSFETS UNDER HIGH VERTICAL FIELD, Solid-state electronics, 41(12), 1997, pp. 1863-1869
SCHOTTKY DIODE CHARACTERISTICS OF TI ON STRAINED-SI
Authors: CHATTOPADHYAY S BERA LK MAHARATNA K CHAKRABARTI S DHAR S RAY SK MAITI CK
Citation: S. Chattopadhyay et al., SCHOTTKY DIODE CHARACTERISTICS OF TI ON STRAINED-SI, Solid-state electronics, 41(12), 1997, pp. 1891-1893
PT P-STRAINED-SI SCHOTTKY DIODE CHARACTERISTICS AT LOW-TEMPERATURE/
Authors: CHATTOPADHYAY S BERA LK RAY SK MAITI CK
Citation: S. Chattopadhyay et al., PT P-STRAINED-SI SCHOTTKY DIODE CHARACTERISTICS AT LOW-TEMPERATURE/, Applied physics letters, 71(7), 1997, pp. 942-944
OXIDATION OF STRAINED SI IN A MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA
Authors: BERA LK MUKHOPADHYAY M RAY SK NAYAK DK USAMI N SHIRAKI Y MAITI CK
Citation: Lk. Bera et al., OXIDATION OF STRAINED SI IN A MICROWAVE ELECTRON-CYCLOTRON-RESONANCE PLASMA, Applied physics letters, 70(2), 1997, pp. 217-219
ELECTRICAL-PROPERTIES OF OXIDES GROWN ON STRAINED SI USING MICROWAVE N2O PLASMA
Authors: BERA LK RAY SK NAYAK DK USAMI N SHIRAKI Y MAITI CK
Citation: Lk. Bera et al., ELECTRICAL-PROPERTIES OF OXIDES GROWN ON STRAINED SI USING MICROWAVE N2O PLASMA, Applied physics letters, 70(1), 1997, pp. 66-68
MICROWAVE PLASMA NITRIDATION OF SI(100), GE(100), AND SI1-XGEX SURFACES - A COMPARATIVE-STUDY
Authors: MUKHOPADHYAY M RAY SK MAITI CK
Citation: M. Mukhopadhyay et al., MICROWAVE PLASMA NITRIDATION OF SI(100), GE(100), AND SI1-XGEX SURFACES - A COMPARATIVE-STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1682-1686
TEOS-BASED PECVD OF SILICON DIOXIDE FOR VLSI APPLICATIONS
Authors: RAY SK MAITI CK LAHIRI SK CHAKRABARTI NB
Citation: Sk. Ray et al., TEOS-BASED PECVD OF SILICON DIOXIDE FOR VLSI APPLICATIONS, Advanced materials for optics and electronics, 6(2), 1996, pp. 73-82
INTERFACE PROPERTIES OF THIN OXIDE LAYERS GROWN ON STRAINED SIGE LAYERS AT LOW-TEMPERATURES
Authors: MUKHOPADHYAY M RAY SK GHOSH TB SREEMANY M MAITI CK
Citation: M. Mukhopadhyay et al., INTERFACE PROPERTIES OF THIN OXIDE LAYERS GROWN ON STRAINED SIGE LAYERS AT LOW-TEMPERATURES, Semiconductor science and technology, 11(3), 1996, pp. 360-365
ULTRATHIN OXIDES USING N2O ON STRAINED SI1-XGEX LAYERS
Authors: MUKHOPADHYAY M RAY SK NAYAK DK MAITI CK
Citation: M. Mukhopadhyay et al., ULTRATHIN OXIDES USING N2O ON STRAINED SI1-XGEX LAYERS, Applied physics letters, 68(9), 1996, pp. 1262-1264
CHEMICALLY ASSISTED ION-BEAM ETCHING OF SILICON AND SILICON DIOXIDE USING SF6
Authors: RAY SK MAITI CK LAHIRI SK
Citation: Sk. Ray et al., CHEMICALLY ASSISTED ION-BEAM ETCHING OF SILICON AND SILICON DIOXIDE USING SF6, Plasma chemistry and plasma processing, 15(4), 1995, pp. 711-720
PROPERTIES OF SIGE OXIDES GROWN IN A MICROWAVE OXYGEN PLASMA
Authors: MUKHOPADHYAY M RAY SK MAITI CK NAYAK DK SHIRAKI Y
Citation: M. Mukhopadhyay et al., PROPERTIES OF SIGE OXIDES GROWN IN A MICROWAVE OXYGEN PLASMA, Journal of applied physics, 78(10), 1995, pp. 6135-6140
MICROWAVE PLASMA GROWN OXYNITRIDE USING NITROUS-OXIDE
Authors: MUKHOPADHYAY M RAY SK MAITI CK
Citation: M. Mukhopadhyay et al., MICROWAVE PLASMA GROWN OXYNITRIDE USING NITROUS-OXIDE, Electronics Letters, 31(22), 1995, pp. 1953-1954
ELECTRICAL-PROPERTIES OF OXIDES GROWN ON STRAINED SIGE LAYER AT LOW-TEMPERATURES IN A MICROWAVE OXYGEN PLASMA (VOL 65, PG 895, 1994)
Authors: MUKHOPADHYAY M RAY SK MAITI CK NAYAK DK SHIRAKI Y
Citation: M. Mukhopadhyay et al., ELECTRICAL-PROPERTIES OF OXIDES GROWN ON STRAINED SIGE LAYER AT LOW-TEMPERATURES IN A MICROWAVE OXYGEN PLASMA (VOL 65, PG 895, 1994), Applied physics letters, 66(12), 1995, pp. 1566-1566
PROPAGATION LOSS OF MAGNETOSTATIC WAVES IN SINGLE AND MULTILAYERED WAVE-GUIDES
Authors: CHAKRABARTI S MAITI CK BHATTACHARYA D
Citation: S. Chakrabarti et al., PROPAGATION LOSS OF MAGNETOSTATIC WAVES IN SINGLE AND MULTILAYERED WAVE-GUIDES, Journal of applied physics, 76(2), 1994, pp. 1260-1265
EFFECT OF REACTIVE-ION BOMBARDMENT ON THE PROPERTIES OF SILICON-NITRIDE AND OXYNITRIDE FILMS DEPOSITED BY ION-BEAM SPUTTERING
Authors: RAY SK DAS S MAITI CK LAHIRI SK CHAKRABORTI NB
Citation: Sk. Ray et al., EFFECT OF REACTIVE-ION BOMBARDMENT ON THE PROPERTIES OF SILICON-NITRIDE AND OXYNITRIDE FILMS DEPOSITED BY ION-BEAM SPUTTERING, Journal of applied physics, 75(12), 1994, pp. 8145-8152
Risultati: 1-25 | 26-27