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Results: 1-9 |
Results: 9
A LOW-TEMPERATURE SCANNING NEAR-FIELD OPTICAL MICROSCOPE FOR PHOTOLUMINESCENCE AT SEMICONDUCTOR STRUCTURES
Authors: MANKE I PAHLKE D LORBACHER J BUSSE W KALKA T RICHTER W DAHNEPRIETSCH M
Citation: I. Manke et al., A LOW-TEMPERATURE SCANNING NEAR-FIELD OPTICAL MICROSCOPE FOR PHOTOLUMINESCENCE AT SEMICONDUCTOR STRUCTURES, Applied physics A: Materials science & processing, 66, 1998, pp. 381-384
GROWTH AND ELECTRONIC-STRUCTURE OF DY SILICIDE ON SI(111)
Authors: VANDRE S KALKA T PREINESBERGER C MANKE I EISELE H DAHNEPRIETSCH M MEIER R WESCHKE E KAINDL G
Citation: S. Vandre et al., GROWTH AND ELECTRONIC-STRUCTURE OF DY SILICIDE ON SI(111), Applied surface science, 123, 1998, pp. 100-103
PHOTOLUMINESCENCE OF BURIED INGAAS GAAS QUANTUM DOTS SPECTRALLY IMAGED BY SCANNING NEAR-FIELD OPTICAL MICROSCOPY/
Authors: PAHLKE D MANKE I HEINRICHSDORFF F DAHNEPRIETSCH M RICHTER W
Citation: D. Pahlke et al., PHOTOLUMINESCENCE OF BURIED INGAAS GAAS QUANTUM DOTS SPECTRALLY IMAGED BY SCANNING NEAR-FIELD OPTICAL MICROSCOPY/, Applied surface science, 123, 1998, pp. 400-404
INTERFACE AND BULK EFFECTS IN THE ATTENUATION OF LOW-ENERGY ELECTRONSTHROUGH CAF2 THIN-FILMS
Authors: ORTEGA JE DEABAJO FJG ECHENIQUE PM MANKE I KALKA T DAHNE M OCHS D MOLODTSOV SL RUBIO A
Citation: Je. Ortega et al., INTERFACE AND BULK EFFECTS IN THE ATTENUATION OF LOW-ENERGY ELECTRONSTHROUGH CAF2 THIN-FILMS, Physical review. B, Condensed matter, 58(4), 1998, pp. 2233-2239
LOW-DENSITY OF STATES AT THE EPITAXIAL CAF2-SI(111) INTERFACE
Authors: DAHNEPRIETSCH M MANKE I KALKA T WEN HJ KAINDL G
Citation: M. Dahneprietsch et al., LOW-DENSITY OF STATES AT THE EPITAXIAL CAF2-SI(111) INTERFACE, Journal of physics. D, Applied physics, 30(12), 1997, pp. 48-50
STABILITY OF CAF2 SI(111) AND AL/CAF2/SI(111) INTERFACE SYSTEMS STUDIED WITH PHOTOELECTRON-SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY/
Authors: WEN HJ DAHNEPRIETSCH M BAUER A MANKE I KAINDL G
Citation: Hj. Wen et al., STABILITY OF CAF2 SI(111) AND AL/CAF2/SI(111) INTERFACE SYSTEMS STUDIED WITH PHOTOELECTRON-SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1645-1652
FORMATION OF THE CESIX SI(111) INTERFACE
Authors: MANKE I WEN HJ HOHR A BAUER A DAHNEPRIETSCH M KAINDL G
Citation: I. Manke et al., FORMATION OF THE CESIX SI(111) INTERFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1657-1665
THERMAL ANNEALING OF THE EPITAXIAL AL SI(111)7X7 INTERFACE - AL CLUSTERING, INTERFACIAL REACTION, AND AL-INDUCED P(+) DOPING/
Authors: WEN HJ DAHNEPRIETSCH M BAUER A CUBERES MT MANKE I KAINDL G
Citation: Hj. Wen et al., THERMAL ANNEALING OF THE EPITAXIAL AL SI(111)7X7 INTERFACE - AL CLUSTERING, INTERFACIAL REACTION, AND AL-INDUCED P(+) DOPING/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(5), 1995, pp. 2399-2406
P(+) DOPING OF SI BY AL DIFFUSION UPON ANNEALING AL N-SI(111)7X7/
Authors: WEN HJ PRIETSCH M BAUER A CUBERES MT MANKE I KAINDL G
Citation: Hj. Wen et al., P(+) DOPING OF SI BY AL DIFFUSION UPON ANNEALING AL N-SI(111)7X7/, Applied physics letters, 66(22), 1995, pp. 3010-3012
Risultati: 1-9 |