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Results: 1-25/36
Authors:
MANTL S
HOLLANDER B
LENSSEN D
LOKEN M
Citation: S. Mantl et al., ION-BEAM SYNTHESIS OF SILICON-BASED MATERIALS, Materials chemistry and physics, 54(1-3), 1998, pp. 280-285
Authors:
HOLLANDER B
MANTL S
MAYER M
KIRCHNER C
PELZMANN A
KAMP M
CHRISTIANSEN S
ALBRECHT M
STRUNK HP
Citation: B. Hollander et al., ION CHANNELING STUDIES OF GAN LAYERS ON C-ORIENTED SAPPHIRE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1248-1252
Authors:
MANTL S
HACKE M
BAY HL
KAPPIUS L
MESTERS S
Citation: S. Mantl et al., SELF-ORDERING OF COSI2 PRECIPITATES AND EPITAXIAL LAYER GROWTH OF COSI2 ON SI(100), Thin solid films, 321, 1998, pp. 251-255
Authors:
MANTL S
Citation: S. Mantl, MOLECULAR-BEAM ALLOTAXY - A NEW APPROACH TO EPITAXIAL HETEROSTRUCTURES, Journal of physics. D, Applied physics, 31(1), 1998, pp. 1-17
Authors:
ENG J
RAGHAVACHARI K
STRUCK LM
CHABAL YJ
BENT BE
BANASZAKHOLL MM
MCFEELY FR
MICHAELS AM
FLYNN GW
CHRISTMAN SB
CHABAN EE
WILLIAMS GP
RADERMACHER K
MANTL S
Citation: J. Eng et al., AN INFRARED STUDY OF H8SI8O12 CLUSTER ADSORPTION ON SI(100) SURFACES, The Journal of chemical physics, 108(20), 1998, pp. 8680-8688
Authors:
ZIMMERMANN U
SCHLOMKA JP
TOLAN M
STETTNER J
PRESS W
HACKE M
MANTL S
Citation: U. Zimmermann et al., X-RAY CHARACTERIZATION OF BURIED ALLOTAXIALLY GROWN COSI2 LAYERS IN SI(100), Journal of applied physics, 83(11), 1998, pp. 5823-5830
Authors:
MESTERS S
KLINKHAMMER F
DOLLE M
KAPPIUS L
MANTL S
Citation: S. Mesters et al., SUBMICROMETRIC STRUCTURING BY LOCAL OXIDA TION OF EPITAXIAL COSI2 ON SILICON, European journal of cell biology, 74, 1997, pp. 115-115
FORMATION OF TERNARY CO1-XPDXSI2 ON SI(100) BY PD ION-IMPLANTATION INCOSI2 SI(100) HETEROSTRUCTURES/
Authors:
TISCH U
HOLLANDER B
HACKE M
MESTERS S
MICHELSEN W
GUGGI D
MANTL S
KABIUS B
Citation: U. Tisch et al., FORMATION OF TERNARY CO1-XPDXSI2 ON SI(100) BY PD ION-IMPLANTATION INCOSI2 SI(100) HETEROSTRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 324-327
Authors:
KLINKHAMMER F
DOLLE M
KAPPIUS L
MANTL S
Citation: F. Klinkhammer et al., SUBMICROMETER PATTERNING OF COBALTDISILICIDE LAYERS BY LOCAL OXIDATION, Microelectronic engineering, 37-8(1-4), 1997, pp. 515-521
Authors:
RUDERS F
KIM J
HACKE M
MESTERS S
BUCHAL C
MANTL S
Citation: F. Ruders et al., VERTICAL MSM PHOTODIODES IN SILICON-BASED ON EPITAXIAL SI COSI2/SI/, Thin solid films, 294(1-2), 1997, pp. 351-353
Authors:
STRUCK LM
ENG J
BENT BE
FLYNN GW
CHABAL YJ
CHRISTMAN SB
CHABAN EE
RAGHAVACHARI K
WILLIAMS GP
RADERMACHER K
MANTL S
Citation: Lm. Struck et al., VIBRATIONAL STUDY OF SILICON OXIDATION - H2O ON SI(100), Surface science, 380(2-3), 1997, pp. 444-454
Authors:
LENSSEN D
MANTL S
Citation: D. Lenssen et S. Mantl, OBSERVATION OF QUANTUM INTERFERENCE EFFECTS IN SUBMICRON COSI2 WIRES IN SI(100), Applied physics letters, 71(24), 1997, pp. 3540-3542
Authors:
WOHLLEBE A
HOLLANDER B
MESTERS S
DIEKER C
CRECELIUS G
MICHELSEN W
MANTL S
Citation: A. Wohllebe et al., SURFACE-DIFFUSION OF FE AND ISLAND GROWTH OF FESI2 ON SI(111) SURFACES, Thin solid films, 287(1-2), 1996, pp. 93-100
Authors:
HACKE M
BAY HL
MANTL S
Citation: M. Hacke et al., MBE GROWTH AND CHARACTERIZATION OF BURIED SILICON-OXIDE FILMS ON SI(100), Thin solid films, 280(1-2), 1996, pp. 107-111
Authors:
MANTL S
Citation: S. Mantl, COMPOUND FORMATION BY ION-BEAM SYNTHESIS AND A COMPARISON WITH ALTERNATIVE METHODS SUCH AS DEPOSITION AND GROWTH OR WAFER BONDING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 355-363
Authors:
BAHR D
PRESS W
JEBASINSKI R
MANTL S
Citation: D. Bahr et al., DIFFUSE-X-RAY SCATTERING FROM THIN-FILMS WITH DEFECTS, Physical review. B, Condensed matter, 51(18), 1995, pp. 12223-12227
Authors:
MANTL S
DOLLE M
MESTERS S
FICHTNER PFP
BAY HL
Citation: S. Mantl et al., PATTERNING METHOD FOR SILICIDES BASED ON LOCAL OXIDATION, Applied physics letters, 67(23), 1995, pp. 3459-3461
Authors:
HERMANNS JP
RUDERS F
VONKAMIENSKI ES
ROSKOS HG
KURZ H
HOLLRICHER O
BUCHAL C
MANTL S
Citation: Jp. Hermanns et al., VERTICAL SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH BURIEDCOSI2, CONTACT, Applied physics letters, 66(7), 1995, pp. 866-868
Authors:
MANTL S
Citation: S. Mantl, MATERIALS ASPECTS OF ION-BEAM SYNTHESIS OF EPITAXIAL SILICIDES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 127-134
Authors:
SCHUPPEN A
JEBASINSKI R
MANTL S
MARSO M
LUTH H
BREUER U
HOLZBRECHER H
Citation: A. Schuppen et al., PHOSPHORUS REDISTRIBUTION DURING THE FORMATION OF BURIED COSI2 LAYERSBY ION-BEAM SYNTHESIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 143-147
Authors:
RADERMACHER K
CARIUS R
MANTL S
Citation: K. Radermacher et al., OPTICAL AND ELECTRICAL-PROPERTIES OF BURIED SEMICONDUCTING BETA-FESI2, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 163-167
Authors:
HOLLANDER B
MANTL S
MICHELSEN W
MESTERS S
HARTMANN A
VESCAN L
GERTHSEN D
Citation: B. Hollander et al., FORMATION OF UNSTRAINED SI1-XGEX LAYERS BY HIGH-DOSE GE-74 ION-IMPLANTATION IN SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 218-221
Authors:
EISEBITT S
RUBENSSON JE
NICODEMUS M
BOSKE T
BLUGEL S
EBERHARDT W
RADERMACHER K
MANTL S
BIHLMAYER G
Citation: S. Eisebitt et al., ELECTRONIC-STRUCTURE OF BURIED ALPHA-FESI2 AND BETA-FESI2 LAYERS - SOFT-X-RAY EMISSION AND ABSORPTION STUDIES COMPARED TO BAND-STRUCTURE CALCULATIONS, Physical review. B, Condensed matter, 50(24), 1994, pp. 18330-18340
Authors:
DOLLE M
GASSIG U
BAY HL
SCHUPPEN A
MANTL S
Citation: M. Dolle et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF BURIED COSI2 LAYERS IN SI(100) GROWN BY MOLECULAR-BEAM ALLOTAXY, Thin solid films, 253(1-2), 1994, pp. 485-489
Authors:
RADERMACHER K
SCHUPPEN A
MANTL S
Citation: K. Radermacher et al., ELECTRON-TRANSPORT OF INHOMOGENEOUS ALPHA-FESI2 (111)SI SCHOTTKY BARRIERS/, Solid-state electronics, 37(3), 1994, pp. 443-449