Authors:
VERSCHUREN CA
LEYS MR
MARSCHNER T
VONK H
WOLTER JH
Citation: Ca. Verschuren et al., A MODIFIED BCF MODEL TO QUANTITATIVELY DESCRIBE THE (100)INP GROWTH-RATE IN CHEMICAL BEAM EPITAXY, Journal of crystal growth, 188(1-4), 1998, pp. 11-16
Citation: R. Rettig et al., X-RAY-DIFFRACTION STUDY OF INTENTIONALLY DISORDERED (GAIN)AS GA(PAS) HETEROSTRUCTURES/, Journal of applied physics, 84(1), 1998, pp. 237-247
Authors:
MARSCHNER T
BRUBACH J
VERSCHUREN CA
LEYS MR
WOLTER JH
Citation: T. Marschner et al., X-RAY INTERFERENCE EFFECT AS A TOOL FOR THE STRUCTURAL INVESTIGATION OF GAINAS INP MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 83(7), 1998, pp. 3630-3637
Authors:
JINPHILLIPP NY
PHILLIPP F
MARSCHNER T
STOLZ W
Citation: Ny. Jinphillipp et al., THICKNESS MODULATION IN SYMMETRICALLY STRAINED III-V SEMICONDUCTOR SUPERLATTICES GROWN BY MOVPE, Journal of materials science. Materials in electronics, 8(5), 1997, pp. 289-299
Authors:
ZHUANG Y
GIANNINI C
TAPFER L
MARSCHNER T
STOLZ W
Citation: Y. Zhuang et al., LATERAL PERIODICITY IN HIGHLY-STRAINED (GAIN)AS GA(PAS) SUPERLATTICESINVESTIGATED BY X-RAY-SCATTERING TECHNIQUES/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 377-383
Authors:
GRIANNINI C
TAPFER L
ZHUANG Y
DECARO L
MARSCHNER T
STOLZ W
Citation: C. Griannini et al., STRUCTURAL ORDERING AND INTERFACE MORPHOLOGY IN SYMMETRICALLY STRAINED (GAIN)AS GA(PAS) SUPERLATTICES GROWN ON OFF-ORIENTED GAAS(100)/, Physical review. B, Condensed matter, 55(8), 1997, pp. 5276-5283
Authors:
HOLY V
GIANNINI C
TAPFER L
MARSCHNER T
STOLZ W
Citation: V. Holy et al., DIFFUSE-X-RAY REFLECTION FROM MULTILAYERS WITH STEPPED INTERFACES, Physical review. B, Condensed matter, 55(15), 1997, pp. 9960-9968
Authors:
SILOV AY
MARSCHNER T
LEYS MR
HAVERKORT JEM
WOLTER JH
Citation: Ay. Silov et al., CATION SUBLATTICE ORDERING IN GAXIN1-XAS QUANTUM-WELLS - EVIDENCE FROM ELECTRON-PHONON INTERACTION, Physica status solidi. a, Applied research, 164(1), 1997, pp. 145-148
Authors:
MARSCHNER T
TICHELAAR FD
LEYS MR
RONGEN RTH
VERSCHUREN CA
VONK H
WOLTER JH
Citation: T. Marschner et al., EPITAXIAL LAYER MORPHOLOGY OF HIGHLY STRAINED GAINAS INP MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY CBE/, Microelectronics, 28(8-10), 1997, pp. 849-855
Authors:
MARSCHNER T
RONGEN RTH
LEYS MR
TICHELAAR FD
VONK H
WOLTER JH
Citation: T. Marschner et al., EFFECTS OF TENSILE STRAIN AND SUBSTRATE OFF-ORIENTATION ON THE GROWTHOF GAINAS INP MULTIPLE-QUANTUM-WELL STRUCTURES BY CBE/, Journal of crystal growth, 175, 1997, pp. 1081-1086
Authors:
RETTIG R
MARSCHNER T
TAPFER L
STOLZ W
GOBEL EO
Citation: R. Rettig et al., GROWTH AND STRUCTURAL-PROPERTIES OF (GAIN)AS GA(PAS) INTENTIONALLY DISORDERED SUPERLATTICE STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of crystal growth, 170(1-4), 1997, pp. 748-751
Authors:
WEHNER MU
STEINBACH D
WEGENER M
MARSCHNER T
STOLZ W
Citation: Mu. Wehner et al., SPECTRALLY RESOLVED 4-WAVE-MIXING EXPERIMENTS ON BULK GAAS WITH 14-FSPULSES, Journal of the Optical Society of America. B, Optical physics, 13(5), 1996, pp. 977-980
Authors:
VOLK M
LUTGEN S
MARSCHNER T
STOLZ W
GOBEL O
CHRISTIANEN PCM
MAAN JC
Citation: M. Volk et al., MAGNETOOPTICAL INVESTIGATIONS OF SYMMETRICALLY STRAINED (GAIN)AS GA(PAS) MULTIPLE-QUANTUM-WELL STRUCTURES/, Solid-state electronics, 40(1-8), 1996, pp. 585-589
Authors:
MARSCHNER T
TAPFER L
JINPHILLIPP NY
PHILLIPP F
LUTGEN S
VOLK M
STOLZ W
GOBEL EO
Citation: T. Marschner et al., STRAIN-INDUCED SELF-ORGANIZED GROWTH OF LATERAL PERIODIC STRAINED-LAYER SUPERLATTICES ON OFF-ORIENTED SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY, Solid-state electronics, 40(1-8), 1996, pp. 819-823
Authors:
JINPHILLIPP NY
PHILLIPP F
MARSCHNER T
STOLZ W
GOBEL EO
Citation: Ny. Jinphillipp et al., TRANSMISSION ELECTRON-MICROSCOPY STUDY ON DEFECT REDUCTION IN GAAS ONSI HETEROEPITAXIAL LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 158(1-2), 1996, pp. 28-36
Authors:
BASTIAN G
VONPLESSEN G
FELDMANN J
HADER J
MARSCHNER T
STOLZ W
GOBEL EO
Citation: G. Bastian et al., OPTICAL BISTABILITY IN SYMMETRICALLY STRAINED (GAIN)AS GA(PAS) SUPERLATTICES/, Applied physics letters, 69(3), 1996, pp. 308-310
Authors:
MARSCHNER T
LUTGEN S
VOLK M
STOLZ W
GOBEL EO
Citation: T. Marschner et al., INVESTIGATIONS OF THE STRUCTURAL STABILITY OF HIGHLY STRAINED [(AL)GAIN]AS GA (PAS) MULTIPLE-QUANTUM WELLS/, Applied physics letters, 69(15), 1996, pp. 2249-2251
Authors:
BANYAI L
THOAI DBT
REITSAMER E
HAUG H
STEINBACH D
WEHNER MU
WEGENER M
MARSCHNER T
STOLZ W
Citation: L. Banyai et al., EXCITON-KLO-PHONON QUANTUM KINETICS - EVIDENCE OF MEMORY EFFECTS IN BULK GAAS, Physical review letters, 75(11), 1995, pp. 2188-2191
Authors:
LUTGEN S
MARSCHNER T
STOLZ W
GOBEL EO
TAPFER L
Citation: S. Lutgen et al., ATOMIC INCORPORATION EFFICIENCIES FOR STRAINED (GAIN)AS GA(PAS) SUPERLATTICE STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of crystal growth, 152(1-2), 1995, pp. 1-13
Authors:
MARSCHNER T
LUTGEN S
VOLK M
STOLZ W
GOBEL EO
JINPHILLIPP NY
PHILLIPP F
Citation: T. Marschner et al., STRAIN-INDUCED CHANGES IN EPITAXIAL LAYER MORPHOLOGY OF HIGHLY STRAINED III V-SEMICONDUCTOR HETEROSTRUCTURES/, Superlattices and microstructures, 15(2), 1994, pp. 183-186
Authors:
LUTGEN S
ALBRECHT TF
MARSCHNER T
STOLZ W
GOBEL EO
Citation: S. Lutgen et al., OPTICAL-PROPERTIES OF SYMMETRICALLY STRAINED (GAIN)AS GA(PAS) SUPERLATTICES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Solid-state electronics, 37(4-6), 1994, pp. 905-909
Authors:
ZIMMERMANN G
SPIKA Z
MARSCHNER T
SPILL B
STOLZ W
GOBEL EO
GIMMNICH P
LORBERTH J
GREILING A
SALZMANN A
Citation: G. Zimmermann et al., GAAS SUBSTRATE PRETREATMENT AND METALORGANIC VAPOR-PHASE EPITAXY OF GAAS, ALAS AND (ALGA)AS USING BETA-ELIMINATING TRIALKYL-AS PRECURSORS, Journal of crystal growth, 145(1-4), 1994, pp. 512-519