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Results: 1-25/26
Authors:
TOBIAS P
MARTENSSON P
BARANZAHI A
SALOMONSSON P
LUNDSTROM I
ABOM L
LLOYDSPETZ A
Citation: P. Tobias et al., RESPONSE OF METAL-INSULATOR-SILICON CARBIDE SENSORS TO DIFFERENT COMPONENTS IN EXHAUST-GASES, Sensors and actuators. B, Chemical, 47(1-3), 1998, pp. 125-130
Authors:
MARTENSSON P
LARSSON K
CARLSSON JO
Citation: P. Martensson et al., ATOMIC LAYER EPITAXY OF COPPER - AN AB-INITIO INVESTIGATION OF THE CUCL H-2 PROCESS - I - ADSORPTION OF CUCL ON CU(111)/, Applied surface science, 136(1-2), 1998, pp. 137-146
Authors:
BACHINGER T
MARTENSSON P
MANDENIUS CF
Citation: T. Bachinger et al., ESTIMATION OF BIOMASS AND SPECIFIC GROWTH-RATE IN A RECOMBINANT ESCHERICHIA-COLI BATCH CULTIVATION PROCESS USING A CHEMICAL MULTISENSOR ARRAY, Journal of biotechnology, 60(1-2), 1998, pp. 55-66
Authors:
MARTENSSON P
CARLSSON JO
Citation: P. Martensson et Jo. Carlsson, ATOMIC LAYER EPITAXY OF COPPER - GROWTH AND SELECTIVITY IN THE CU(II)-2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE H-2 PROCESS/, Journal of the Electrochemical Society, 145(8), 1998, pp. 2926-2931
Authors:
BARANZAHI A
TOBIAS P
SPETZ AL
MARTENSSON P
EKEDAHL LG
LUNDSTROM I
Citation: A. Baranzahi et al., CHEMICAL SENSORS WITH CATALYTIC METAL GATES - SWITCHING BEHAVIOR AND KINETIC PHASE-TRANSITIONS, Journal of the Electrochemical Society, 145(10), 1998, pp. 3401-3406
Authors:
MARTENSSON P
CARLSSON JO
Citation: P. Martensson et Jo. Carlsson, ATOMIC LAYER EPITAXY OF COPPER ON TANTALUM, CHEMICAL VAPOR DEPOSITION, 3(1), 1997, pp. 45-50
Authors:
NAKAGOMI S
TOBIAS P
BARANZAHI A
LUNDSTROM I
MARTENSSON P
SPETZ AL
Citation: S. Nakagomi et al., INFLUENCE OF CARBON-MONOXIDE, WATER AND OXYGEN ON HIGH-TEMPERATURE CATALYTIC METAL-OXIDE-SILICON CARBIDE STRUCTURES, Sensors and actuators. B, Chemical, 45(3), 1997, pp. 183-191
Authors:
BARANZAHI A
SPETZ AL
GLAVMO M
CARLSSON C
NYTOMT J
SALOMONSSON P
JOBSON E
HAGGENDAL B
MARTENSSON P
LUNDSTROM I
Citation: A. Baranzahi et al., RESPONSE OF METAL-OXIDE-SILICON CARBIDE SENSORS TO SIMULATED AND REALEXHAUST-GASES, Sensors and actuators. B, Chemical, 43(1-3), 1997, pp. 52-59
Authors:
MARTENSSON P
OWMAN F
JOHANSSON LI
Citation: P. Martensson et al., MORPHOLOGY, ATOMIC AND ELECTRONIC-STRUCTURE OF 6H-SIC(0001) SURFACES, Physica status solidi. b, Basic research, 202(1), 1997, pp. 501-528
Authors:
HALLIN C
OWMAN F
MARTENSSON P
ELLISON A
KONSTANTINOV A
KORDINA O
JANZEN E
Citation: C. Hallin et al., IN-SITU SUBSTRATE PREPARATION FOR HIGH-QUALITY SIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 181(3), 1997, pp. 241-253
Authors:
EKLOV T
MARTENSSON P
LUNDSTROM I
Citation: T. Eklov et al., ENHANCED SELECTIVITY OF MOSFET GAS SENSORS BY SYSTEMATIC ANALYSIS OF TRANSIENT PARAMETERS, Analytica chimica acta, 353(2-3), 1997, pp. 291-300
Authors:
OWMAN F
MARTENSSON P
Citation: F. Owman et P. Martensson, SCANNING-TUNNELING-MICROSCOPY STUDY OF SIC(0001) SURFACE RECONSTRUCTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 933-937
Authors:
ERLANDSSON R
OLSSON L
MARTENSSON P
Citation: R. Erlandsson et al., INEQUIVALENT ATOMS AND IMAGING MECHANISMS IN AC-MODE ATOMIC-FORCE MICROSCOPY OF SI(111)7X7, Physical review. B, Condensed matter, 54(12), 1996, pp. 8309-8312
Authors:
JOHANSSON LI
OWMAN F
MARTENSSON P
Citation: Li. Johansson et al., HIGH-RESOLUTION CORE-LEVEL STUDY OF 6H-SIC(0001), Physical review. B, Condensed matter, 53(20), 1996, pp. 13793-13802
Authors:
JOHANSSON LI
OWMAN F
MARTENSSON P
PERSSON C
LINDEFELT U
Citation: Li. Johansson et al., ELECTRONIC-STRUCTURE OF 6H-SIC(0001), Physical review. B, Condensed matter, 53(20), 1996, pp. 13803-13807
Authors:
OWMAN F
MARTENSSON P
Citation: F. Owman et P. Martensson, THE SIC(0001)6-ROOT-X6-ROOT-3 RECONSTRUCTION STUDIED WITH STM AND LEED, Surface science, 369(1-3), 1996, pp. 126-136
Authors:
JOHANSSON LI
OWMAN F
MARTENSSON P
Citation: Li. Johansson et al., SURFACE-STATE ON THE SIC(0001)-(ROOT-3X-ROOT-3) SURFACE, Surface science, 360(1-3), 1996, pp. 478-482
Authors:
JOHANSSON LI
OWMAN F
MARTENSSON P
Citation: Li. Johansson et al., A PHOTOEMISSION-STUDY OF 4H-SIC(0001), Surface science, 360(1-3), 1996, pp. 483-488
Authors:
OWMAN F
MARTENSSON P
Citation: F. Owman et P. Martensson, STM STUDY OF HYDROGEN EXPOSURE OF THE SI(111)ROOT-3X-ROOT-3-IN SURFACE, Surface science, 359(1-3), 1996, pp. 122-134
Authors:
OWMAN F
HALLIN C
MARTENSSON P
JANZEN E
Citation: F. Owman et al., REMOVAL OF POLISHING-INDUCED DAMAGE FROM 6H-SIC(0001) SUBSTRATES BY HYDROGEN ETCHING, Journal of crystal growth, 167(1-2), 1996, pp. 391-395
Authors:
OWMAN F
MARTENSSON P
Citation: F. Owman et P. Martensson, STM STUDY OF THE SIC(0001)ROOT-3X-ROOT-3 SURFACE, Surface science, 330(1), 1995, pp. 639-645
Authors:
OWMAN F
MARTENSSON P
Citation: F. Owman et P. Martensson, STM STUDY OF STRUCTURAL DEFECTS ON IN-SITU PREPARED SI(111)1X1-H SURFACES, Surface science, 324(2-3), 1995, pp. 211-225
Authors:
MARTENSSON P
HARSTA A
Citation: P. Martensson et A. Harsta, HALIDE CHEMICAL-VAPOR-DEPOSITION OF BI2SR2CACU2O8- ASPECTS OF EPITAXY(X ), Journal of crystal growth, 156(1-2), 1995, pp. 67-73
Authors:
IVANOV I
HULTMAN L
JARRENDAHL K
MARTENSSON P
SUNDGREN JE
HJORVARSSON B
GREENE JE
Citation: I. Ivanov et al., GROWTH OF EPITAXIAL ALN(0001) ON SI(111) BY REACTIVE MAGNETRON SPUTTER-DEPOSITION, Journal of applied physics, 78(9), 1995, pp. 5721-5726
Authors:
OWMAN F
MARTENSSON P
Citation: F. Owman et P. Martensson, STM STUDY OF SI(111)1X1-H SURFACES PREPARED BY IN-SITU HYDROGEN EXPOSURE, Surface science, 303(3), 1994, pp. 120000367-120000372