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Results:
1-7
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Results: 7
Authors:
ISBERG M
JONSSON P
KESKITALO N
MASSZI F
BLEICHER H
Citation: M. Isberg et al., PHYSICAL MODELS IN DEVICE SIMULATION OF SI POWER PIN-DIODES FOR OPTIMAL FITTING OF SIMULATION RESULTS TO MEASURED DATA, Compel, 16(3), 1997, pp. 144
Authors:
TARNAY K
GALI A
POPPE A
KOCSIS T
MASSZI F
Citation: K. Tarnay et al., EXAMINATION OF MOS STRUCTURES BY A 3D PARTICLE DYNAMICS MONTE-CARLO SIMULATOR INCLUDING ELECTROTHERMAL EFFECTS, Physica scripta. T, T69, 1997, pp. 290-294
Authors:
KESKITALO N
HALLEN A
MASSZI F
OLSSON J
Citation: N. Keskitalo et al., SIMULATION OF FORWARD BIAS INJECTION IN PROTON-IRRADIATED SILICON PN-JUNCTIONS, Solid-state electronics, 39(7), 1996, pp. 1087-1092
Authors:
HALLEN A
KESKITALO N
MASSZI F
NAGL V
Citation: A. Hallen et al., LIFETIME IN PROTON-IRRADIATED SILICON, Journal of applied physics, 79(8), 1996, pp. 3906-3914
Authors:
NILSSON HE
SANNEMO U
KOEL A
MASSZI F
PETERSSON CS
Citation: He. Nilsson et al., THE EFFECT OF USING DIFFERENT TRANSPORT MODELS IN COMPUTER-SIMULATIONS OF THE PERMEABLE-BASE TRANSISTOR, Physica scripta. T, 54, 1994, pp. 141-145
Authors:
TARNAY K
MASSZI F
KOCSIS T
POPPE A
KISS L
Citation: K. Tarnay et al., THE IONIZATION PROCESS OF ALPHA-PARTICLES IN MESOSCOPIC STRUCTURES - SIMULATION BY MONTE-CARLO METHOD, Physica scripta. T, 54, 1994, pp. 256-262
Authors:
VELMRE E
UDAL A
KOCSIS T
MASSZI F
Citation: E. Velmre et al., A THEORETICALLY ACCURATE MOBILITY MODEL FOR SEMICONDUCTOR-DEVICE DRIFT-DIFFUSION SIMULATION, Physica scripta. T, 54, 1994, pp. 263-267
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1-7
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