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Results: 1-25/57
Authors:
DESJARDINS P
ISNARD L
MARCHAND H
MASUT RA
Citation: P. Desjardins et al., COMPETING STRAIN RELAXATION MECHANISMS IN ORGANOMETALLIC VAPOR-PHASE EPITAXY OF STRAIN-COMPENSATED GAINP INASP MULTILAYERS ON INP(001)/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 776-780
Authors:
GUILLON S
YIP RYF
DESJARDINS P
CHICOINE M
BOUGRIOUA Z
BEAUDOIN M
AITOUALI A
MASUT RA
Citation: S. Guillon et al., LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY OF COHERENT INGAASP INP AND INGAASP/INASP MULTILAYERS ON INP(001)/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 781-785
Authors:
ABABOU Y
MASUT RA
YELON A
Citation: Y. Ababou et al., LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY OF INP ON (111) SUBSTRATES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 790-793
Authors:
YIP RYF
DESJARDINS P
ISNARD L
AITOUALI A
BENSAADA A
MARCHAND H
BREBNER JL
CURRIE JF
MASUT RA
Citation: Ryf. Yip et al., BAND ALIGNMENT AND BARRIER HEIGHT CONSIDERATIONS FOR THE QUANTUM-CONFINED STARK-EFFECT, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 801-804
Authors:
COVA P
SINGH A
MEDINA A
MASUT RA
Citation: P. Cova et al., EFFECT OF DOPING ON THE FORWARD CURRENT-TRANSPORT MECHANISMS IN A METAL-INSULATOR-SEMICONDUCTOR CONTACT TO INP-ZN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Solid-state electronics, 42(4), 1998, pp. 477-485
Authors:
ZHAO YG
QIN YD
HUANG XL
WANG JJ
ZOU YH
MASUT RA
BEAUDOIN M
Citation: Yg. Zhao et al., PHOTOEXCITED CARRIER DIFFUSION DEPENDENCE OF DIFFERENTIAL REFLECTION DYNAMICS IN INASXP1-X INP (X-LESS-THAN-OR-EQUAL-TO-0.35) STRAINED-MULTIPLE-QUANTUM WELLS/, Solid state communications, 105(6), 1998, pp. 393-397
Authors:
AITOUALI A
CHENNOUF A
YIP RYF
BREBNER JL
LEONELLI R
MASUT RA
Citation: A. Aitouali et al., LOCALIZATION OF EXCITONS BY POTENTIAL FLUCTUATIONS AND ITS EFFECT ON THE STOKES SHIFT IN INGAP INP QUANTUM-CONFINED HETEROSTRUCTURES/, Journal of applied physics, 84(10), 1998, pp. 5639-5642
Authors:
ZHAO YG
ZOU YH
HUANG XL
WANG JJ
QIN YD
MASUT RA
BEAUDOIN M
Citation: Yg. Zhao et al., DIFFERENTIAL REFLECTION DYNAMICS IN INASXP1-X INP (X-LESS-THAN-OR-EQUAL-TO-0.35) STRAINED-MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 83(8), 1998, pp. 4430-4435
Authors:
AITOUALI A
YIP RYF
BREBNER JL
MASUT RA
Citation: A. Aitouali et al., STRAIN RELAXATION AND EXCITON LOCALIZATION EFFECTS ON THE STOKES SHIFT IN INASXP1-X INP MULTIPLE-QUANTUM WELLS/, Journal of applied physics, 83(6), 1998, pp. 3153-3160
Authors:
YIP RYF
DESJARDINS P
ISNARD L
AITOUALI A
MARCHAND H
BREBNER JL
CURRIE JF
MASUT RA
Citation: Ryf. Yip et al., BAND ALIGNMENT ENGINEERING FOR HIGH-SPEED, LOW DRIVE FIELD QUANTUM-CONFINED STARK-EFFECT DEVICES, Journal of applied physics, 83(3), 1998, pp. 1758-1769
Authors:
ZHAO YG
ZOU YH
WANG JJ
QIN YD
HUANG XL
MASUT RA
BENSAADA A
Citation: Yg. Zhao et al., EFFECT OF INTERFACE ROUGHNESS AND WELL WIDTH ON DIFFERENTIAL REFLECTION DYNAMICS IN INGAAS INP QUANTUM-WELLS/, Applied physics letters, 72(1), 1998, pp. 97-99
Authors:
MARCHAND H
DESJARDINS P
GUILLON S
PAULTRE JE
BOUGRIOUA Z
YIP RYF
MASUT RA
Citation: H. Marchand et al., METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH AND STRUCTURAL CHARACTERIZATION OF SELF-ASSEMBLED INAS NANOMETER-SIZED ISLANDS ON INP(001), Journal of electronic materials, 26(10), 1997, pp. 1205-1213
Authors:
ABABOU Y
DESJARDINS P
CHENNOUF A
MASUT RA
YELON A
BEAUDOIN M
BENSAADA A
LEONELLI R
LESPERANCE G
Citation: Y. Ababou et al., OPTICAL-ABSORPTION AND DETERMINATION OF BAND-OFFSET IN STRAIN-BALANCED GAINP INASP MULTIPLE-QUANTUM WELLS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY/, Semiconductor science and technology, 12(5), 1997, pp. 550-554
Authors:
CHICOINE M
ROORDA S
CLICHE L
MASUT RA
Citation: M. Chicoine et al., DIRECTIONAL EFFECTS DURING ION-IMPLANTATION - LATERAL MASS-TRANSPORT AND ANISOTROPIC GROWTH, Physical review. B, Condensed matter, 56(3), 1997, pp. 1551-1560
Authors:
NAZARENO HN
MASUT RA
Citation: Hn. Nazareno et Ra. Masut, BLOCH OSCILLATIONS IN A BOLTZMANN TRANSPORT-EQUATION FORMALISM UNDER THE RELAXATION-TIME APPROXIMATION, Solid state communications, 101(11), 1997, pp. 819-823
Authors:
YIP RYF
MASUT RA
Citation: Ryf. Yip et Ra. Masut, BAND ALIGNMENT STRATEGY FOR EFFICIENT OPTICAL MODULATION IN QUANTUM-CONFINED STARK-EFFECT DEVICES, Journal of applied physics, 82(4), 1997, pp. 1976-1978
Authors:
YIP RYF
AITOUALI A
BENSAADA A
DESJARDINS P
BEAUDOIN M
ISNARD L
BREBNER JL
CURRIE JF
MASUT RA
Citation: Ryf. Yip et al., STRAIN AND RELAXATION EFFECTS IN INASP INP MULTIPLE-QUANTUM-WELL OPTICAL MODULATOR DEVICES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY (VOL 81, PG 1905, 1997)/, Journal of applied physics, 82(12), 1997, pp. 6372-6372
Authors:
COVA P
SINGH A
MASUT RA
Citation: P. Cova et al., A SELF-CONSISTENT TECHNIQUE FOR THE ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF A TUNNEL METAL-INSULATOR-SEMICONDUCTOR STRUCTURE, Journal of applied physics, 82(10), 1997, pp. 5217-5226
Authors:
DESJARDINS P
MARCHAND H
ISNARD L
MASUT RA
Citation: P. Desjardins et al., MICROSTRUCTURE AND STRAIN RELAXATION IN ORGANOMETALLIC VAPOR-PHASE EPITAXY OF STRAIN-COMPENSATED GAINP INASP MULTILAYERS ON INP(001)/, Journal of applied physics, 81(8), 1997, pp. 3501-3511
Authors:
YIP RYF
AITOUALI A
BENSAADA A
DESJARDINS P
BEAUDOIN M
ISNARD L
BREBNER JL
CURRIE JF
MASUT RA
Citation: Ryf. Yip et al., STRAIN AND RELAXATION EFFECTS IN INASP INP MULTIPLE-QUANTUM-WELL OPTICAL MODULATOR DEVICES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY/, Journal of applied physics, 81(4), 1997, pp. 1905-1915
METALORGANIC VAPOR-PHASE EPITAXY OF COHERENT SELF-ASSEMBLED INAS NANOMETER-SIZED ISLANDS IN INP(001)
Authors:
MARCHAND H
DESJARDINS P
GUILLON S
PAULTRE JE
BOUGRIOUA Z
YIP RYF
MASUT RA
Citation: H. Marchand et al., METALORGANIC VAPOR-PHASE EPITAXY OF COHERENT SELF-ASSEMBLED INAS NANOMETER-SIZED ISLANDS IN INP(001), Applied physics letters, 71(4), 1997, pp. 527-529
Authors:
CLETON F
SIEBER B
MASUT RA
ISNARD L
BONARD JM
GANIERE JD
Citation: F. Cleton et al., PHOTON RECYCLING AS THE DOMINANT PROCESS OF LUMINESCENCE GENERATION IN AN ELECTRON-BEAM EXCITED N-INP EPILAYER GROWN ON AN N(-INP SUBSTRATE()), Semiconductor science and technology, 11(5), 1996, pp. 726-734
Authors:
BEAUDOIN M
BENSAADA A
LEONELLI R
DESJARDINS P
MASUT RA
ISNARD L
CHENNOUF A
LESPERANCE G
Citation: M. Beaudoin et al., SELF-CONSISTENT DETERMINATION OF THE BAND OFFSETS IN INASXP1-X INP STRAINED-LAYER QUANTUM-WELLS AND THE BOWING PARAMETER OF BULK INASXP1-X/, Physical review. B, Condensed matter, 53(4), 1996, pp. 1990-1996
Authors:
ABABOU Y
DESJARDINS P
CHENNOUF A
LEONELLI R
HETHERINGTON D
YELON A
LESPERANCE G
MASUT RA
Citation: Y. Ababou et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF INP GROWN ON SI(111) BY METALORGANIC VAPOR-PHASE EPITAXY USING THERMAL CYCLE GROWTH, Journal of applied physics, 80(9), 1996, pp. 4997-5005
Authors:
CLETON F
SIEBER B
LEFEBVRE A
BENSAADA A
MASUT RA
BONARD JM
GANIERE JD
AMBRI M
Citation: F. Cleton et al., TRANSMISSION ELECTRON-MICROSCOPY AND CATHODOLUMINESCENCE OF TENSILE-STRAINED GAXIN1-XP INP HETEROSTRUCTURES .1. SPATIAL VARIATIONS OF THE TENSILE-STRESS RELAXATION/, Journal of applied physics, 80(2), 1996, pp. 827-836