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Results: 1-10 |
Results: 10
MAGNETRON ION ETCHING OF THROUGH-WAFER VIA HOLES FOR GAAS MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS USING SICL4
Authors: MITRA A NORDQUIST CD JACKSON TN MAYER TS
Citation: A. Mitra et al., MAGNETRON ION ETCHING OF THROUGH-WAFER VIA HOLES FOR GAAS MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS USING SICL4, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2695-2698
FABRICATION OF HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED SUBCOLLECTOR LAYERS FOR REDUCTION OF BASE-COLLECTOR CAPACITANCE BY MOLECULAR-BEAM EPITAXY REGROWTH
Authors: MICOVIC M NORDQUIST CD LUBYSHEV D MAYER TS MILLER DL STREATER RW SPRINGTHORPE AJ
Citation: M. Micovic et al., FABRICATION OF HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED SUBCOLLECTOR LAYERS FOR REDUCTION OF BASE-COLLECTOR CAPACITANCE BY MOLECULAR-BEAM EPITAXY REGROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 962-967
GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A BASE DOPING 10(20) CM(-3) GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING CBR4/
Authors: MICOVIC M NORDQUIST C LUBYSHEV D MAYER TS MILLER DL STREATER RW SPRINGTHORPE AJ
Citation: M. Micovic et al., GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A BASE DOPING 10(20) CM(-3) GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING CBR4/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 972-976
OPTIMIZATION OF IN0.53GA0.47AS REACTIVE ION ETCHING WITH CH4 H-2 USING DESIGN OF EXPERIMENT METHODS/
Authors: ZAVIEH L NORDQUIST CD MAYER TS
Citation: L. Zavieh et al., OPTIMIZATION OF IN0.53GA0.47AS REACTIVE ION ETCHING WITH CH4 H-2 USING DESIGN OF EXPERIMENT METHODS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1024-1029
INTERACTIONS OF LANGUAGE AND MEMORY IN DEAF-CHILDREN AND ADULTS
Authors: MARSCHARK M MAYER TS
Citation: M. Marschark et Ts. Mayer, INTERACTIONS OF LANGUAGE AND MEMORY IN DEAF-CHILDREN AND ADULTS, Scandinavian journal of psychology, 39(3), 1998, pp. 145-148
MOLECULAR-BEAM EPITAXY OF HIGHLY MISMATCHED IN0.73GA0.27AS ON INP FORNEAR-INFRARED PHOTODETECTORS
Authors: KOCHHAR R HWANG WY MICOVIC M MAYER TS MILLER DL LORD SM
Citation: R. Kochhar et al., MOLECULAR-BEAM EPITAXY OF HIGHLY MISMATCHED IN0.73GA0.27AS ON INP FORNEAR-INFRARED PHOTODETECTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 316-320
IMPROVEMENTS IN FIBER ALIGNMENT TOLERANCE USING CHEMICALLY ETCHED MONOLITHICALLY INTEGRATED MICROLENSES ON INGAAS-INP PIN PHOTODETECTORS
Authors: MADHAV M GHOSH M MAYER TS
Citation: M. Madhav et al., IMPROVEMENTS IN FIBER ALIGNMENT TOLERANCE USING CHEMICALLY ETCHED MONOLITHICALLY INTEGRATED MICROLENSES ON INGAAS-INP PIN PHOTODETECTORS, Electronics Letters, 33(10), 1997, pp. 891-892
GENERATION AND MINORITY-CARRIER LEAKAGE ALONG GAAS-SURFACES
Authors: MAYER TS LING ZG COOPER JA MELLOCH MR
Citation: Ts. Mayer et al., GENERATION AND MINORITY-CARRIER LEAKAGE ALONG GAAS-SURFACES, Journal of applied physics, 75(4), 1994, pp. 2098-2104
VISUAL EVENT-RELATED POTENTIALS DURING ODOR LABELING
Authors: LORIG TS MAYER TS MOORE FH WARRENBURG S
Citation: Ts. Lorig et al., VISUAL EVENT-RELATED POTENTIALS DURING ODOR LABELING, Chemical senses, 18(4), 1993, pp. 379-387
UNEXPECTED INCREASE IN THE THERMAL GENERATION RATE OF BULK GAAS DUE TO ELECTRON-BEAM METALLIZATION
Authors: MAYER TS FLEETWOOD DM BEUTLER DE COOPER JA MELLOCH MR
Citation: Ts. Mayer et al., UNEXPECTED INCREASE IN THE THERMAL GENERATION RATE OF BULK GAAS DUE TO ELECTRON-BEAM METALLIZATION, IEEE transactions on nuclear science, 40(6), 1993, pp. 1293-1299
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