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Results: 1-8 |
Results: 8
METAL GAN SCHOTTKY BARRIERS CHARACTERIZED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY/
Authors: BELL LD SMITH RP MCDERMOTT BT GERTNER ER PITTMAN R PIERSON RL SULLIVAN GJ
Citation: Ld. Bell et al., METAL GAN SCHOTTKY BARRIERS CHARACTERIZED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2286-2290
HIGH-POWER 10-GHZ OPERATION OF ALGAN HFETS ON INSULATING SIC
Authors: SULLIVAN GJ CHEN MY HIGGINS JA YANG JW CHEN Q PIERSON RL MCDERMOTT BT
Citation: Gj. Sullivan et al., HIGH-POWER 10-GHZ OPERATION OF ALGAN HFETS ON INSULATING SIC, IEEE electron device letters, 19(6), 1998, pp. 198-200
HIGH-POWER RF OPERATION OF ALGAN GAN HEMTS GROWN ON INSULATING SILICON-CARBIDE SUBSTRATES/
Authors: SULLIVAN GJ HIGGINS JA CHEN MY YANG JW CHEN Q PIERSON RL MCDERMOTT BT
Citation: Gj. Sullivan et al., HIGH-POWER RF OPERATION OF ALGAN GAN HEMTS GROWN ON INSULATING SILICON-CARBIDE SUBSTRATES/, Electronics Letters, 34(9), 1998, pp. 922-924
SI-IMPLANTED SUBCOLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: SUN MH PIERSON RL CHEN MY ZAMPARDI PJ HO MC MCDERMOTT BT FITZSIMMONS S TIKU S LEE R
Citation: Mh. Sun et al., SI-IMPLANTED SUBCOLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS, Electronics Letters, 34(11), 1998, pp. 1155-1156
BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY OF METAL GAN INTERFACES/
Authors: BELL LD SMITH RP MCDERMOTT BT GERTNER ER PITTMAN R PIERSON RL SULLIVAN GJ
Citation: Ld. Bell et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY OF METAL GAN INTERFACES/, Applied physics letters, 72(13), 1998, pp. 1590-1592
GROWTH AND DOPING OF GAASSB VIA METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR INP HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: MCDERMOTT BT GERTNER ER PITTMAN S SEABURY CW CHANG MF
Citation: Bt. Mcdermott et al., GROWTH AND DOPING OF GAASSB VIA METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR INP HETEROJUNCTION BIPOLAR-TRANSISTORS, Applied physics letters, 68(10), 1996, pp. 1386-1388
HIGHLY DOPED GALNAS USING DIETHYLBERYLLIUM BY MOCVD FOR INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTOR APPLICATIONS
Authors: MCDERMOTT BT SEABURY CW FARLEY CW HIGGINS JA
Citation: Bt. Mcdermott et al., HIGHLY DOPED GALNAS USING DIETHYLBERYLLIUM BY MOCVD FOR INP-BASED HETEROSTRUCTURE BIPOLAR-TRANSISTOR APPLICATIONS, Journal of electronic materials, 22(5), 1993, pp. 555-558
BASE RECOMBINATION IN HIGH-PERFORMANCE INGAAS INP HBTS/
Authors: SEABURY CW FARLEY CW MCDERMOTT BT HIGGINS JA LIN CL KIRCHNER PJ WOODALL JM GEE RC
Citation: Cw. Seabury et al., BASE RECOMBINATION IN HIGH-PERFORMANCE INGAAS INP HBTS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2123-2124
Risultati: 1-8 |